SCHEMBL2535111

SCHEMBL2535111

O=C(O)C(CC1CCCCC1)C1CNCCO1

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CPN1 P15169 4/20 0.40
CPB2 Q96IY4 4/20 0.40
SSTR4 P31391 1/20 0.36
SLC6A2 P23975 3/20 0.33
SLC6A4 P31645 2/20 0.33
SLC6A1 P30531 2/20 0.33
GABRA5 P31644 2/20 0.33
GABRB2 P47870 2/20 0.33
SLC6A12 P48065 2/20 0.33
SLC6A11 P48066 2/20 0.33
SLC6A13 Q9NSD5 2/20 0.33
GABRA1 P14867 1/20 0.33
GABRR1 P24046 1/20 0.33
GABRA4 P48169 1/20 0.33
MEN1 O00255 2/20 0.32
HTT P42858 2/20 0.32
KMT2A Q03164 2/20 0.32
MITF O75030 1/20 0.31
LMNA P02545 1/20 0.31
TP53 P04637 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27125583 0.77 SLC6A2 (0.39) CPN1CPB2SLC6A2SLC6A4MEN1
SCHEMBL28166934 0.76 SSTR4 (0.34) SSTR4SLC6A2SLC6A4MEN1KMT2A
SCHEMBL2535109 0.75 CPN1 (0.47) CPN1CPB2SSTR4SLC6A2SLC6A4
Hydrochloric Acid SCHEMBL17111214 0.74 SLC6A2 (0.37) CPN1CPB2SLC6A2SLC6A4MEN1
SCHEMBL5870581 0.73 CPN1 (0.46) CPN1CPB2SSTR4
SCHEMBL27997055 0.70 GPR84 (0.39) SLC6A2SLC6A4MEN1KMT2ACYP3A4
SCHEMBL28750525 0.69 SLC6A2 (0.34) SLC6A2SLC6A4MEN1KMT2ACYP3A4
SCHEMBL1206581 0.68 SLC6A2 (0.40) SLC6A2SLC6A4MEN1KMT2ACYP3A4
SCHEMBL15049656 0.68 SLC6A2 (0.38) SLC6A2SLC6A4LMNATP53SMN1; SMN2
SCHEMBL15049657 0.68 SLC6A2 (0.38) SLC6A2SLC6A4LMNATP53SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8921025-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-30 US disclosed
US-8043788-B2 Alkali soluble resin; immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-25 US disclosed
US-20100310986-A1 POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-12-09 US disclosed
US-7771914-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-08-10 US disclosed
US-7622242-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-24 US disclosed
US-7598016-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-06 US disclosed
US-7514204-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-07 US disclosed
US-20090081588-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-26 US disclosed
US-20090011365-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
US-20080241736-A1 Immersion lithography; copolymer containing ammonium salt of carboxylic acid and fluorine monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-10-02 US disclosed
US-20080096131-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-24 US disclosed
US-20080090172-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-04-17 US disclosed