SCHEMBL254306

SCHEMBL254306

O=S(=O)(CC(F)(F)F)CS(=O)(=O)CC(F)(F)F

nearest known ligand 0.32

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
CA1 P00915 2/20 0.32
CA2 P00918 2/20 0.32
CA9 Q16790 1/20 0.32
CES1 P23141 4/20 0.31
CA7 P43166 1/20 0.30
CA13 Q8N1Q1 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL777742 0.86 CA1 (0.35) CA1CA2CA9CA7CA13
SCHEMBL6853106 0.83 CA1 (0.33) CA1CA2CA9CA7CA13
SCHEMBL776907 0.78 CA1 (0.31) CA1CA2CA9
SCHEMBL7051921 0.78 CA1 (0.31) CA1CA2CA9
SCHEMBL777906 0.78 CES1 (0.34) CA1CA2CA9CES1
SCHEMBL6591972 0.75
SCHEMBL7051925 0.75
SCHEMBL8281650 0.75
SCHEMBL7054561 0.73 CES1 (0.32) CES1
SCHEMBL778507 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8524941-B2 Process for producing monomer for fluorinated resist CENTRAL GLASS COMPANY, LIMITED (JP) 2013-09-03 US disclosed
EP-1788436-B1 Rework process for photoresist film SHINETSU CHEMICAL CO (JP) 2013-01-09 EP disclosed
US-20120004444-A1 Process for Producing Monomer for Fluorinated Resist CENTRAL GLASS COMPANY, LIMITED (JP) 2012-01-05 US disclosed
US-7868407-B2 Substrate comprising a lower silicone resin film and an upper silicone resin film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-11 US disclosed
US-7642043-B2 Rework process for photoresist film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-05 US disclosed
US-7638268-B2 Rework process for photoresist film SHIN-ESTU CHEMICAL CO., LTD. (JP) 2009-12-29 US disclosed
EP-1788437-B1 Rework process for photoresist film SHINETSU CHEMICAL CO (JP) 2009-12-23 EP disclosed
EP-1801619-B1 Substrate comprising two antireflective silicone resin layers between an organic layer and a photoresist layer, method for producing the same and patterning process using the same SHINETSU CHEMICAL CO (JP) 2008-08-06 EP disclosed
US-7303785-B2 Antireflective film material, and antireflective film and pattern formation method using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-04 US disclosed
EP-1801619-A2 Substrate, method for producing the same, and patterning process using the same Shin-Etsu Chemical Co., Ltd. (JP) 2007-06-27 EP disclosed
US-20070128886-A1 Substrate, method for producing the same, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-06-07 US disclosed
US-20070117411-A1 Rework process for photoresist film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-24 US disclosed
EP-1788436-A1 Rework process for photoresist film Shin-Etsu Chemical Company, Ltd. (JP) 2007-05-23 EP disclosed
EP-1788437-A2 Rework process for photoresist film Shinetsu Chemical Co., Ltd. (JP) 2007-05-23 EP disclosed
US-20070111134-A1 solvent remove the first photoresist film, forming a second photoresist film over the second antireflection silicone resin film which is over the first antireflection silicone resin film; lower cost and provide an excellent resist pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-17 US disclosed
US-20040253461-A1 Antireflective film material, and antireflective film and pattern formation method using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-16 US disclosed
EP-0495073-A4 METHIDE SALTS, FORMULATIONS, ELECTROLYTES AND BATTERIES FORMED THEREFROM COVALENT ASSOCIATES INC (US) 1993-02-24 EP disclosed
EP-0495073-A1 METHIDE SALTS, FORMULATIONS, ELECTROLYTES AND BATTERIES FORMED THEREFROM. COVALENT ASSOCIATES INC (US) 1992-07-22 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120004444-A1 Process for Producing Monomer for Fluorinated Resist ESD, AFF1, CAD CA1 1447/4885CA2 2913/4885CA9 1573/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.