SCHEMBL25475366

SCHEMBL25475366

CC(C)(OC(=O)CS)C1CCNCC1

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CPN1 P15169 2/20 0.35
CPB2 Q96IY4 2/20 0.35
TSHR P16473 2/20 0.33
HSD17B10 Q99714 1/20 0.33
ARG1 P05089 1/20 0.32
ARG2 P78540 1/20 0.32
GABRP O00591 1/20 0.31
GABRD O14764 1/20 0.31
GABRA1 P14867 1/20 0.31
GABRB1 P18505 1/20 0.31
GABRG2 P18507 1/20 0.31
GABRB3 P28472 1/20 0.31
GABRA5 P31644 1/20 0.31
GABRA3 P34903 1/20 0.31
GABRA2 P47869 1/20 0.31
GABRB2 P47870 1/20 0.31
GABRA4 P48169 1/20 0.31
GABRE P78334 1/20 0.31
PMP22 Q01453 1/20 0.31
GABRA6 Q16445 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22373285 0.89 EPHX1 (0.35) CPN1CPB2TSHRARG1ARG2
SCHEMBL11965894 0.87 TSHR (0.39) TSHRHSD17B10
SCHEMBL25475272 0.87 CPN1 (0.33) CPN1CPB2ARG1ARG2
SCHEMBL22373023 0.86 GABRP (0.33) CPN1CPB2TSHRARG1ARG2
SCHEMBL22373148 0.84 ARG1 (0.33) TSHRARG1ARG2GABRPGABRD
SCHEMBL24943973 0.84 ARG1 (0.33) TSHRARG1ARG2GABRPGABRD
SCHEMBL22372955 0.83 ARG1 (0.32) TSHRARG1ARG2GABRPGABRD
SCHEMBL22372725 0.83 ARG1 (0.32) TSHRARG1ARG2GABRPGABRD
SCHEMBL22372963 0.83 ARG1 (0.32) TSHRARG1ARG2GABRPGABRD
SCHEMBL22373039 0.83 ARG1 (0.32) TSHRARG1ARG2GABRPGABRD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20230161252-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20230161252-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20230152698-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-18 US disclosed
US-20230152698-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-18 US disclosed