SCHEMBL25657993

SCHEMBL25657993

Cc1cc(OCC(=O)OC2(C)C3CC4CC(C3)CC2C4)ccc1[SH](c1ccccc1)c1ccccc1

nearest known ligand 0.42

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
CYP17A1 P05093 2/20 0.42
CYP19A1 P11511 2/20 0.42
ATM Q13315 1/20 0.37
TDP1 Q9NUW8 2/20 0.36
L3MBTL1 Q9Y468 2/20 0.36
MAPT P10636 1/20 0.36
GPR183 P32249 1/20 0.35
EPHX2 P34913 1/20 0.35
MCL1 Q07820 1/20 0.35
GAA P10253 1/20 0.35
KMT2A Q03164 2/20 0.34
MEN1 O00255 1/20 0.34
ALDH1A1 P00352 1/20 0.34
HSD11B1 P28845 1/20 0.34
NPC1 O15118 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25657991 0.87 CYP17A1 (0.46) CYP17A1CYP19A1L3MBTL1MAPTEPHX2
SCHEMBL25468324 0.83 CYP17A1 (0.43) CYP17A1CYP19A1ATMKMT2AMEN1
SCHEMBL13418069 0.82 CYP17A1 (0.52) CYP17A1CYP19A1L3MBTL1MAPTKMT2A
SCHEMBL98530 0.82 CYP17A1 (0.41) CYP17A1CYP19A1ATMTDP1L3MBTL1
SCHEMBL25695833 0.81 CYP17A1 (0.41) CYP17A1CYP19A1L3MBTL1MAPTEPHX2
SCHEMBL22314260 0.81 PTPN7 (0.49) CYP17A1CYP19A1MAPTGPR183KMT2A
SCHEMBL22314259 0.81 PTPN7 (0.49) CYP17A1CYP19A1MAPTGPR183KMT2A
SCHEMBL27294957 0.81 GPR183 (0.33) ATMTDP1L3MBTL1MAPTGPR183
SCHEMBL17032002 0.81 CYP17A1 (0.51) CYP17A1CYP19A1ATMMAPTGAA
SCHEMBL25629460 0.80 CYP17A1 (0.41) CYP17A1CYP19A1ATML3MBTL1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2024-01-16 US disclosed
US-11835857-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-12-05 US disclosed
US-11822240-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-21 US disclosed
WO-2023195407-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 東京応化工業株式会社 2023-10-12 WO disclosed
US-11780946-B2 Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-10 US disclosed
US-20230314945-A1 NEGATIVE-TONE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-05 US disclosed
US-11762288-B2 Resist composition, method of forming resist pattern, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-19 US disclosed
WO-2023171739-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND POLYMER COMPOUND 東京応化工業株式会社 2023-09-14 WO disclosed
US-11754922-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 US disclosed
WO-2023163008-A1 RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND POLYMER COMPOUND 東京応化工業株式会社 2023-08-31 WO disclosed
US-11709425-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-25 US disclosed
US-11703757-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-18 US disclosed
US-11703756-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-18 US disclosed
US-11693313-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-04 US disclosed
US-11693316-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-04 US disclosed
US-20230205084-A1 RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2023-06-29 US disclosed
WO-2023112893-A1 RESIST COMPOSITION AND RESIST PATTERN FORMATION METHOD 東京応化工業株式会社 2023-06-22 WO disclosed
WO-2023112746-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 東京応化工業株式会社 2023-06-22 WO disclosed
US-11650497-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-16 US disclosed
US-11644751-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-09 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11709425-B2 Resist composition and method of forming resist pattern RER1, RRS1, RXFP4 CYP17A1 99/4885CYP19A1 280/4885ATM 4557/4885
US-11693313-B2 Resist composition and method of forming resist pattern C1R, C1S, C9 CYP17A1 245/4885CYP19A1 234/4885ATM 1452/4885
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent MRPS23, MRPS22, SLC11A2 CYP17A1 2761/4885CYP19A1 3464/4885ATM 3523/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.