Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP17A1 | P05093 | 2/20 | 0.41 |
| ▸ | CYP19A1 | P11511 | 2/20 | 0.41 |
| ▸ | MAPT | P10636 | 3/20 | 0.37 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.37 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.37 |
| ▸ | ATM | Q13315 | 1/20 | 0.36 |
| ▸ | RAB9A | P51151 | 2/20 | 0.35 |
| ▸ | NPC1 | O15118 | 1/20 | 0.35 |
| ▸ | LMNA | P02545 | 1/20 | 0.34 |
| ▸ | GPR183 | P32249 | 1/20 | 0.34 |
| ▸ | GAA | P10253 | 2/20 | 0.34 |
| ▸ | MCL1 | Q07820 | 1/20 | 0.34 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.33 |
| ▸ | MEN1 | O00255 | 1/20 | 0.33 |
| ▸ | HPGD | P15428 | 2/20 | 0.33 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.33 |
| ▸ | CASP1 | P29466 | 1/20 | 0.33 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL47573 | 0.86 | CYP17A1 (0.46) | CYP17A1CYP19A1MAPTL3MBTL1RAB9A | |
| SCHEMBL47504 | 0.82 | CYP17A1 (0.43) | CYP17A1CYP19A1MAPTKMT2AMEN1 | |
| SCHEMBL25657993 | 0.82 | CYP17A1 (0.42) | CYP17A1CYP19A1MAPTTDP1L3MBTL1 | |
| Hydrochloric Acid SCHEMBL31564945 | 0.82 | CYP17A1 (0.44) | CYP17A1CYP19A1KMT2AMEN1 | |
| Bromide SCHEMBL31708313 | 0.82 | CYP17A1 (0.42) | CYP17A1CYP19A1KMT2AMEN1 | |
| SCHEMBL13418067 | 0.81 | CYP17A1 (0.45) | CYP17A1CYP19A1MAPTL3MBTL1RAB9A | |
| SCHEMBL13418069 | 0.80 | CYP17A1 (0.52) | CYP17A1CYP19A1MAPTL3MBTL1RAB9A | |
| SCHEMBL22314259 | 0.80 | PTPN7 (0.49) | CYP17A1CYP19A1MAPTRAB9ANPC1 | |
| SCHEMBL22314260 | 0.80 | PTPN7 (0.49) | CYP17A1CYP19A1MAPTRAB9ANPC1 | |
| SCHEMBL98577 | 0.79 | CYP17A1 (0.40) | CYP17A1CYP19A1MAPTL3MBTL1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 228 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11874601-B2 | Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2024-01-16 | — | — | US | disclosed |
| US-11835857-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-11829068-B2 | Resist composition, method of forming resist pattern, compound, and resin | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-28 | — | — | US | disclosed |
| US-11822240-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11780946-B2 | Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-10-10 | — | — | US | disclosed |
| US-20230314945-A1 | NEGATIVE-TONE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-10-05 | — | — | US | disclosed |
| US-11762288-B2 | Resist composition, method of forming resist pattern, and acid diffusion-controlling agent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-11754922-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-12 | — | — | US | disclosed |
| US-11747726-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-05 | — | — | US | disclosed |
| US-11709425-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-25 | — | — | US | disclosed |
| US-20120100487-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-04-26 | — | — | US | disclosed |
| US-20120058430-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-03-08 | — | — | US | disclosed |
| US-20120015299-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-01-19 | — | — | US | disclosed |
| US-20110287362-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-11-24 | — | — | US | disclosed |
| US-20110117499-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-05-19 | — | — | US | disclosed |
| US-20100233626-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-09-16 | — | — | US | disclosed |
| US-20100233624-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-09-16 | — | — | US | disclosed |
| US-7776510-B2 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-08-17 | — | — | US | disclosed |
| US-20100015555-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NOVEL COMPOUND AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-01-21 | — | — | US | disclosed |
| US-20080311522-A1 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11709425-B2 | Resist composition and method of forming resist pattern | RER1, RRS1, RXFP4 | CYP17A1 99/4885CYP19A1 280/4885MAPT 4059/4885 |
| US-20080311522-A1 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | GNG2, ACAD9, SCO2 | CYP17A1 1181/4885CYP19A1 441/4885MAPT 4832/4885 |
| US-20120015299-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | RER1, ASIC1, ABCC1 | CYP17A1 477/4885CYP19A1 138/4885MAPT 4645/4885 |
| US-20110287362-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | RER1, ASIC1, SCO2 | CYP17A1 724/4885CYP19A1 636/4885MAPT 4446/4885 |
| US-20100015555-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NOVEL COMPOUND AND ACID GENERATOR | RER1, SLC11A2, FRG1 | CYP17A1 209/4885CYP19A1 168/4885MAPT 4601/4885 |
| US-20120058430-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | ASIC1, SLC11A2, RER1 | CYP17A1 441/4885CYP19A1 190/4885MAPT 4270/4885 |
| US-11874601-B2 | Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent | MRPS23, MRPS22, SLC11A2 | CYP17A1 2761/4885CYP19A1 3464/4885MAPT 4792/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.