SCHEMBL2575560

SCHEMBL2575560

C=C(C)C(=O)OCCCC1(CCCOC(=O)C(=C)C)CC[Si](c2ccccc2)(c2ccccc2)[Si](c2ccccc2)(c2ccccc2)O1

nearest known ligand 0.37

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
POLB P06746 1/20 0.37
APEX1 P27695 1/20 0.37
HTT P42858 1/20 0.37
TDP1 Q9NUW8 1/20 0.37
TSHR P16473 2/20 0.34
CA1 P00915 2/20 0.31
CA2 P00918 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704975 0.77 TSHR (0.42) POLBAPEX1HTTTDP1TSHR
SCHEMBL8655279 0.72 TSHR (0.38) POLBAPEX1HTTTDP1TSHR
SCHEMBL28060791 0.69 TSHR (0.50) POLBAPEX1HTTTDP1TSHR
SCHEMBL21237064 0.67 TSHR (0.47) POLBAPEX1HTTTDP1TSHR
SCHEMBL27148948 0.67 TSHR (0.40) POLBAPEX1HTTTDP1TSHR
SCHEMBL216519 0.66 TSHR (0.41) POLBAPEX1HTTTDP1TSHR
SCHEMBL27819753 0.66 TSHR (0.53) POLBAPEX1HTTTDP1TSHR
SCHEMBL14492394 0.65 TDP1 (0.43) POLBAPEX1HTTTDP1TSHR
SCHEMBL12589317 0.65 POLB (0.39) POLBAPEX1HTTTDP1TSHR
SCHEMBL10939360 0.65 LMNA (0.31) TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9946158-B2 Composition for forming resist underlayer film for nanoimprint NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-04-17 US disclosed
EP-2461350-B1 USE OF A COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY NISSAN CHEMICAL IND LTD (JP) 2018-02-28 EP disclosed
US-20150099070-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT NISSAN CHEMICAL IND LTD (JP) 2015-04-09 US disclosed
EP-2461350-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2012-06-06 EP disclosed
US-20120128891-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-05-24 US disclosed
US-8048615-B2 Silicon-containing resist underlayer coating forming composition for forming photo-crosslinking cured resist underlayer coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-11-01 US disclosed
US-20090162782-A1 Silicon-Containing Resist Underlayer Coating Forming Composition for Forming Photo-Crosslinking Cured Resist Underlayer Coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-06-25 US disclosed
EP-1972998-A1 SILICON-CONTAINING RESIST UNDERLYING LAYER FILM FORMING COMPOSITION FOR FORMATION OF PHOTOCROSSLINKING CURED RESIST UNDERLYING LAYER FILM Nissan Chemical Industries, Ltd. (JP) 2008-09-24 EP disclosed