SCHEMBL2579460

SCHEMBL2579460

C=CC(=O)O[Si](C)(OC(C)=O)OC(C)=O

nearest known ligand 0.38

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.38
TSHR P16473 6/20 0.34
HPGD P15428 1/20 0.33
TP53 P04637 2/20 0.32
HIF1A Q16665 2/20 0.32
CYP3A4 P08684 1/20 0.32
HSD17B10 Q99714 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10592974 0.91 TSHR (0.39) ALDH1A1TSHRHPGDTP53HIF1A
SCHEMBL27743554 0.87 TSHR (0.34) ALDH1A1TSHRHPGD
SCHEMBL63651 0.80 ALDH1A1 (0.41) ALDH1A1TSHRHSD17B10
SCHEMBL27609652 0.79 TSHR (0.39) ALDH1A1TSHRHPGDTP53HIF1A
SCHEMBL2584602 0.79 TSHR (0.35) ALDH1A1TSHRHPGDTP53HIF1A
SCHEMBL27722868 0.78 TSHR (0.38) TSHRHPGD
SCHEMBL28403841 0.77 TSHR (0.38) ALDH1A1TSHRHPGDTP53HIF1A
SCHEMBL23781789 0.77 ALDH1A1 (0.39) ALDH1A1TSHRHSD17B10
SCHEMBL27710287 0.76 ALDH1A1 (0.32) ALDH1A1TSHR
SCHEMBL138778 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9946158-B2 Composition for forming resist underlayer film for nanoimprint NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-04-17 US disclosed
EP-2461350-B1 USE OF A COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY NISSAN CHEMICAL IND LTD (JP) 2018-02-28 EP disclosed
US-20150099070-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT NISSAN CHEMICAL IND LTD (JP) 2015-04-09 US disclosed
EP-2461350-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2012-06-06 EP disclosed
US-20120128891-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-05-24 US disclosed
US-8048615-B2 Silicon-containing resist underlayer coating forming composition for forming photo-crosslinking cured resist underlayer coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-11-01 US disclosed
US-20090162782-A1 Silicon-Containing Resist Underlayer Coating Forming Composition for Forming Photo-Crosslinking Cured Resist Underlayer Coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-06-25 US disclosed
EP-1972998-A1 SILICON-CONTAINING RESIST UNDERLYING LAYER FILM FORMING COMPOSITION FOR FORMATION OF PHOTOCROSSLINKING CURED RESIST UNDERLYING LAYER FILM Nissan Chemical Industries, Ltd. (JP) 2008-09-24 EP disclosed