SCHEMBL2579936

SCHEMBL2579936

C=CC(=O)Oc1ccccc1[SiH](OCC)OCC

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
THRB P10828 4/20 0.50
THRA P10827 1/20 0.50
KDM4E B2RXH2 2/20 0.34
MAPT P10636 2/20 0.34
GLA P06280 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
HPGD P15428 1/20 0.34
HSD17B10 Q99714 1/20 0.34
HCRTR1 O43613 2/20 0.34
GAA P10253 1/20 0.34
TYMS P04818 1/20 0.34
ALDH1A1 P00352 1/20 0.34
PTGS2 P35354 2/20 0.33
LMNA P02545 2/20 0.33
MCL1 Q07820 1/20 0.33
LIG1 P18858 1/20 0.33
ESR1 P03372 1/20 0.32
ESR2 Q92731 1/20 0.32
MEN1 O00255 1/20 0.32
PLIN1 O60240 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27863590 0.87 THRB (0.44) THRBTHRAKDM4EMAPTHSD17B10
SCHEMBL2577758 0.83 THRB (0.47) THRBTHRAKDM4EMAPTHPGD
SCHEMBL2578319 0.81 ELANE (0.41) THRBKDM4EMAPTGLAL3MBTL1
SCHEMBL2581349 0.80 THRB (0.49) THRBTHRAKDM4EMAPTHPGD
SCHEMBL237185 0.77 THRB (0.39) THRBTHRAMAPTHPGDHSD17B10
SCHEMBL819105 0.76 THRB (0.56) THRBTHRAMAPTGLAL3MBTL1
SCHEMBL2580884 0.76 THRB (0.49) THRBTHRAKDM4EMAPTHPGD
SCHEMBL30197447 0.76 THRB (0.56) THRBTHRAMAPTGLAL3MBTL1
SCHEMBL28653395 0.76 THRB (0.47) THRBTHRAKDM4EGLAL3MBTL1
SCHEMBL2577809 0.76 THRB (0.46) THRBTHRAKDM4EMAPTHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9946158-B2 Composition for forming resist underlayer film for nanoimprint NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-04-17 US disclosed
EP-2461350-B1 USE OF A COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY NISSAN CHEMICAL IND LTD (JP) 2018-02-28 EP disclosed
US-20150099070-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT NISSAN CHEMICAL IND LTD (JP) 2015-04-09 US disclosed
EP-2461350-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2012-06-06 EP disclosed
US-20120128891-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-05-24 US disclosed
US-8048615-B2 Silicon-containing resist underlayer coating forming composition for forming photo-crosslinking cured resist underlayer coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-11-01 US disclosed
US-20090162782-A1 Silicon-Containing Resist Underlayer Coating Forming Composition for Forming Photo-Crosslinking Cured Resist Underlayer Coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-06-25 US disclosed
EP-1972998-A1 SILICON-CONTAINING RESIST UNDERLYING LAYER FILM FORMING COMPOSITION FOR FORMATION OF PHOTOCROSSLINKING CURED RESIST UNDERLYING LAYER FILM Nissan Chemical Industries, Ltd. (JP) 2008-09-24 EP disclosed