SCHEMBL2586976

SCHEMBL2586976

C=C(C)C(=O)OC(CCC)CCCCCCCC

nearest known ligand 0.51

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.51
FAAH O00519 1/20 0.41
CTSK P43235 1/20 0.40
GPR84 Q9NQS5 5/20 0.39
FFAR1 O14842 1/20 0.39
MAPT P10636 2/20 0.39
ZDHHC7 Q9NXF8 1/20 0.39
MAPK1 P28482 1/20 0.39
LCK P06239 1/20 0.38
PPARD Q03181 1/20 0.38
ZDHHC20 Q5W0Z9 1/20 0.38
ZDHHC2 Q9UIJ5 1/20 0.38
ALDH1A1 P00352 1/20 0.38
LMNA P02545 2/20 0.37
CA2 P00918 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28933478 1.00 TSHR (0.51) TSHRFAAHCTSKGPR84FFAR1
SCHEMBL27433516 1.00 TSHR (0.51) TSHRFAAHCTSKGPR84FFAR1
SCHEMBL21670808 1.00 TSHR (0.51) TSHRFAAHCTSKGPR84FFAR1
SCHEMBL28246096 1.00 TSHR (0.51) TSHRFAAHCTSKGPR84FFAR1
SCHEMBL18456081 0.98 TSHR (0.49) TSHRFAAHCTSKGPR84FFAR1
SCHEMBL6679717 0.96 TSHR (0.55) TSHRFAAHGPR84FFAR1MAPT
SCHEMBL21647274 0.96 TSHR (0.55) TSHRFAAHGPR84FFAR1MAPT
SCHEMBL1702704 0.96 TSHR (0.55) TSHRFAAHGPR84FFAR1MAPT
SCHEMBL21853813 0.96 TSHR (0.55) TSHRFAAHGPR84FFAR1MAPT
SCHEMBL21853809 0.96 TSHR (0.55) TSHRFAAHGPR84FFAR1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117757121-A High-firmness coating film and preparation method thereof 佛山市彩龙镀膜包装材料有限公司 2024-03-26 CN disclosed
CN-109796660-A A kind of wheat stalk/RLDPE composite material film and preparation method thereof 昆明理工大学 2019-05-24 CN disclosed
EP-3040776-B1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND METHOD FOR MAKING PHOTOMASK SHINETSU CHEMICAL CO (JP) 2018-01-03 EP disclosed
EP-3040776-A1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND METHOD FOR MAKING PHOTOMASK Shin-Etsu Chemical Co., Ltd. (JP) 2016-07-06 EP disclosed
US-20160147142-A1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND METHOD FOR MAKING PHOTOMASK SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-26 US disclosed
EP-2455811-B1 Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method SHINETSU CHEMICAL CO (JP) 2016-01-13 EP disclosed
US-9233919-B2 Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-01-12 US disclosed
US-20140296561-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD SHINETSU CHEMICAL CO (JP) 2014-10-02 US disclosed
US-8785105-B2 Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-07-22 US disclosed
EP-2112554-B1 Sulfonium salt-containing polymer, resist composition, and patterning process SHINETSU CHEMICAL CO (JP) 2012-06-06 EP disclosed
US-20120129103-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-24 US disclosed
EP-2455811-A1 Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method Shin-Etsu Chemical Co., Ltd. (JP) 2012-05-23 EP disclosed
US-8048610-B2 Sulfonium salt-containing polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-11-01 US disclosed
US-20090269696-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-29 US disclosed
EP-2112554-A2 Sulfonium salt-containing polymer, resist composition, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2009-10-28 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20140296561-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD RER1, SMC4, SMCHD1 TSHR 3516/4885FAAH 2204/4885CTSK 4505/4885
US-20120129103-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD RER1, SMC4, SMCHD1 TSHR 3516/4885FAAH 2204/4885CTSK 4505/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.