SCHEMBL2601708

SCHEMBL2601708

CCC(C)C(=O)OC1CCC(OS(N)(=O)=O)CC1

nearest known ligand 0.42

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
CA2 P00918 8/20 0.42
CA1 P00915 7/20 0.42
CA12 O43570 5/20 0.39
CA9 Q16790 5/20 0.39
SMYD3 Q9H7B4 1/20 0.31
GAA P10253 1/20 0.31
CHRM2 P08172 1/20 0.31
CHRM1 P11229 1/20 0.31
CHRM3 P20309 1/20 0.31
ADRA1A P35348 1/20 0.31
CHRNA4 P43681 1/20 0.31
HTR3A P46098 1/20 0.31
KCNH2 Q12809 1/20 0.31
CA7 P43166 1/20 0.31
CA14 Q9ULX7 1/20 0.31
MAPT P10636 1/20 0.30
STS P08842 1/20 0.30
CYP19A1 P11511 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10224670 0.88 SMYD3 (0.31) CA2CA1CA12CA9SMYD3
SCHEMBL10900145 0.85 CHRM2 (0.38) GAACHRM2CHRM1CHRM3ADRA1A
SCHEMBL12202165 0.82 EPHX1 (0.34) SMYD3CYP19A1
SCHEMBL12202179 0.82 GAA (0.34) GAAMAPT
SCHEMBL13073273 0.78 CYP19A1 (0.40) GAACHRM2CHRM1CHRM3ADRA1A
SCHEMBL18119958 0.78 CHRM2 (0.34) GAACHRM2CHRM1CHRM3ADRA1A
SCHEMBL2754975 0.78 SHBG (0.39) CHRM2CHRM1CHRM3ADRA1ACHRNA4
SCHEMBL6721426 0.78 CYP19A1 (0.40) GAACHRM2CHRM1CHRM3ADRA1A
SCHEMBL2681050 0.78 EPHX1 (0.47) CHRM2CHRM1CHRM3ADRA1ACHRNA4
SCHEMBL1350834 0.78 EPHX1 (0.43) CHRM2CHRM1CHRM3ADRA1ACHRNA4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9250531-B2 Method of forming resist pattern and negative tone-development resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2016-02-02 US disclosed
US-8987386-B2 Method of producing polymeric compound, resist composition, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-03-24 US disclosed
US-8735045-B2 Positive resist composition, method of forming resist pattern, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-05-27 US disclosed
US-8450044-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-28 US disclosed
US-8440385-B2 Positive resist composition, method of forming resist pattern and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-14 US disclosed
US-20120328993-A1 METHOD OF PRODUCING POLYMERIC COMPOUND, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-12-27 US disclosed
US-20120100487-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2012-04-26 US disclosed
US-8034536-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2011-10-11 US disclosed
US-20110244392-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2011-10-06 US disclosed
US-20110111343-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-12 US disclosed
US-20110097667-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2011-04-28 US disclosed
US-20090297980-A1 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. 2009-12-03 US disclosed