SCHEMBL2601710

SCHEMBL2601710

CCC(C)(C(=O)OC12CC3CC(C1)CC(OS(N)(=O)=O)(C3)C2)C(F)(F)F

nearest known ligand 0.32

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
DPP8 Q6V1X1 1/20 0.31
DPP9 Q86TI2 1/20 0.31
CYP17A1 P05093 1/20 0.30
CYP19A1 P11511 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12202168 0.86 DPP8 (0.33) DPP8DPP9
SCHEMBL12202182 0.86
SCHEMBL2601709 0.85 DPP8 (0.32) DPP8DPP9CYP17A1CYP19A1
SCHEMBL9973332 0.82 HSD11B1 (0.35) DPP8DPP9CYP17A1CYP19A1
SCHEMBL2681232 0.81 CYP19A1 (0.42) CYP17A1CYP19A1
SCHEMBL17773367 0.80 DPP8 (0.31) DPP8DPP9CYP17A1CYP19A1
SCHEMBL12587688 0.80 DPP8 (0.35) DPP8DPP9CYP17A1CYP19A1
SCHEMBL11988723 0.80 GAA (0.32) DPP8DPP9CYP17A1CYP19A1
SCHEMBL17773369 0.80 ALDH1A1 (0.39) DPP8DPP9CYP17A1CYP19A1
SCHEMBL12761050 0.79 DPP8 (0.32) DPP8DPP9CYP17A1CYP19A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9250531-B2 Method of forming resist pattern and negative tone-development resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2016-02-02 US disclosed
US-8987386-B2 Method of producing polymeric compound, resist composition, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-03-24 US disclosed
US-8735045-B2 Positive resist composition, method of forming resist pattern, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-05-27 US disclosed
US-8450044-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-28 US disclosed
US-8440385-B2 Positive resist composition, method of forming resist pattern and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-14 US disclosed
US-20120328993-A1 METHOD OF PRODUCING POLYMERIC COMPOUND, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-12-27 US disclosed
US-20120100487-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2012-04-26 US disclosed
US-8034536-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2011-10-11 US disclosed
US-20110244392-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2011-10-06 US disclosed
US-20110111343-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-12 US disclosed
US-20110097667-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2011-04-28 US disclosed
US-20090297980-A1 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. 2009-12-03 US disclosed