Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.41 |
| ▸ | ATM | Q13315 | 1/20 | 0.39 |
| ▸ | TSHR | P16473 | 6/20 | 0.37 |
| ▸ | HPGD | P15428 | 1/20 | 0.37 |
| ▸ | HCAR2 | Q8TDS4 | 1/20 | 0.35 |
| ▸ | ESR1 | P03372 | 3/20 | 0.35 |
| ▸ | NAAA | Q02083 | 1/20 | 0.34 |
| ▸ | CES2 | O00748 | 1/20 | 0.34 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.34 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.34 |
| ▸ | LMNA | P02545 | 2/20 | 0.33 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.33 |
| ▸ | CYP2C19 | P33261 | 2/20 | 0.33 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.33 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.33 |
| ▸ | NR1H2 | P55055 | 1/20 | 0.33 |
| ▸ | RNASEL | Q05823 | 1/20 | 0.33 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.33 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.33 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13705982 | 0.94 | NAAA (0.43) | ALDH1A1TSHRHCAR2NAAACES2 | |
| SCHEMBL12134219 | 0.94 | NAAA (0.43) | ALDH1A1TSHRHCAR2NAAACES2 | |
| SCHEMBL12134214 | 0.94 | NAAA (0.43) | ALDH1A1TSHRHCAR2NAAACES2 | |
| SCHEMBL12134225 | 0.94 | NAAA (0.43) | ALDH1A1TSHRHCAR2NAAACES2 | |
| SCHEMBL12134215 | 0.85 | — | — | |
| SCHEMBL12134234 | 0.84 | NAAA (0.45) | TSHRHCAR2NAAACES2SMN1; SMN2 | |
| SCHEMBL12134240 | 0.84 | NAAA (0.45) | TSHRHCAR2NAAACES2SMN1; SMN2 | |
| SCHEMBL12134220 | 0.83 | CYP4F2 (0.33) | ACHE | |
| SCHEMBL2602832 | 0.82 | ALDH1A1 (0.34) | ALDH1A1LMNA | |
| SCHEMBL10122782 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8298746-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-10-30 | — | — | US | disclosed |
| US-8232039-B2 | Polymer and resist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-07-31 | — | — | US | disclosed |
| US-8173352-B2 | Resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-05-08 | — | — | US | disclosed |
| US-8158329-B2 | Compound and chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-04-17 | — | — | US | disclosed |
| US-8062829-B2 | Chemically amplified resist composition and chemically amplified resist composition for immersion lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-22 | — | — | US | disclosed |
| US-8057983-B2 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-15 | — | — | US | disclosed |
| US-8048612-B2 | Polymer and chemically amplified resist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-01 | — | — | US | disclosed |
| US-8003296-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-08-23 | — | — | US | disclosed |
| US-7998656-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-08-16 | — | — | US | disclosed |
| US-7981985-B2 | Polymer and chemically amplified resist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-07-19 | — | — | US | disclosed |
| US-7575850-B2 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-08-18 | — | — | US | disclosed |
| US-7572570-B2 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-08-11 | — | — | US | disclosed |
| US-7566522-B2 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-07-28 | — | — | US | disclosed |
| US-20080274426-A1 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080248423-A1 | Lithography; semiconductor microfabrication | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080220369-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-09-11 | — | — | US | disclosed |
| US-20080213695-A1 | Lithography; semiconductor microfabrication | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-09-04 | — | — | US | disclosed |
| US-20080193874-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080176168-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-24 | — | — | US | disclosed |
| US-20080166660-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-10 | — | — | US | disclosed |