SCHEMBL2607774

SCHEMBL2607774

CCC(C)(C)C(=O)OC1(C(C)C)CCCCCCC1

nearest known ligand 0.37

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
ADORA3 P0DMS8 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL47396 1.00 ADORA3 (0.32) ADORA3
SCHEMBL2607838 1.00 ADORA3 (0.32) ADORA3
SCHEMBL47415 0.98 HMGCR (0.30) ADORA3
SCHEMBL13325008 0.87 ADORA3 (0.31) ADORA3
SCHEMBL17789355 0.87 ADORA3 (0.31) ADORA3
SCHEMBL13325009 0.85
SCHEMBL17789347 0.85 HMGCR (0.31)
SCHEMBL17789337 0.85 ADORA3 (0.31) ADORA3
SCHEMBL17789345 0.84 HMGCR (0.32)
SCHEMBL18266864 0.84

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10018913-B2 Active-light-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2018-07-10 US disclosed
US-9952509-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2018-04-24 US disclosed
US-20180081277-A1 PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOSITION FOR FORMING UPPER LAYER FILM FUJIFILM CORPORATION (JP) 2018-03-22 US disclosed
US-20180051149-A1 HARDCOAT FILM, POLARIZING PLATE, AND TOUCH PANEL DISPLAY FUJIFILM CORPORATION (JP) 2018-02-22 US disclosed
US-9880472-B2 Pattern formation method, pattern, and etching method, electronic device manufacturing method, and electronic device using same FUJIFILM CORPORATION (JP) 2018-01-30 US disclosed
US-20170371244-A1 COMPOSITION FOR FORMING UPPER LAYER FILM, PATTERN FORMING METHOD, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-12-28 US disclosed
US-9841679-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-12-12 US disclosed
US-20170349686-A1 PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-12-07 US disclosed
US-9810981-B2 Pattern formation method, etching method, electronic device manufacturing method, and electronic device FUJIFILM CORPORATION (JP) 2017-11-07 US disclosed
US-20170199460-A1 PATTERN FORMING METHOD, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-07-13 US disclosed
US-20130288179-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND JSR CORPORATION (JP) 2013-10-31 US disclosed
US-8481243-B2 Resin and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-07-09 US disclosed
US-8431324-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2013-04-30 US disclosed
US-20120178021-A1 RESIN AND PHOTORESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-07-12 US disclosed
US-20120156620-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-06-21 US disclosed
US-20120122034-A1 RESIN AND PHOTORESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-05-17 US disclosed
US-20120115082-A1 RESIN AND PHOTORESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-05-10 US disclosed
US-20120100483-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-04-26 US disclosed
US-20120100482-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-04-26 US disclosed
US-20100285405-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-11-11 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120178021-A1 RESIN AND PHOTORESIST COMPOSITION COMPRISING THE SAME SULT1A1, SULT1E1, C1S ADORA3 428/4885
US-20120122034-A1 RESIN AND PHOTORESIST COMPOSITION COMPRISING THE SAME C1R, RCOR3, SULT1E1 ADORA3 446/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.