SCHEMBL2608052

SCHEMBL2608052

C=C(C)C(=O)OCC(=O)OCCCC(F)(F)CC(F)(F)F

nearest known ligand 0.41

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.41
POLB P06746 1/20 0.35
APEX1 P27695 1/20 0.35
HTT P42858 1/20 0.35
TDP1 Q9NUW8 1/20 0.35
THRB P10828 1/20 0.35
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22662309 0.82 TSHR (0.42) TSHRPOLBAPEX1HTTTDP1
SCHEMBL2607869 0.82 TSHR (0.37) TSHRTHRBALDH1A1
SCHEMBL10189288 0.82 THRB (0.41) TSHRPOLBAPEX1HTTTDP1
SCHEMBL23563134 0.78 TSHR (0.39) TSHRPOLBAPEX1HTTTDP1
SCHEMBL18623653 0.78 TSHR (0.51) TSHRPOLBAPEX1HTTTDP1
SCHEMBL15449222 0.77 THRB (0.40) TSHRPOLBAPEX1HTTTDP1
SCHEMBL6849323 0.76 TSHR (0.56) TSHRPOLBAPEX1HTTTDP1
SCHEMBL22662269 0.76 THRB (0.39) TSHRPOLBAPEX1HTTTDP1
SCHEMBL2628305 0.76 THRB (0.55) TSHRPOLBAPEX1HTTTDP1
SCHEMBL12770293 0.75 TSHR (0.51) TSHRPOLBAPEX1HTTTDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8642244-B2 Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-02-04 US disclosed
US-8501387-B2 2013-08-06 US disclosed
US-8475997-B2 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2013-07-02 US disclosed
US-20120094236-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND SHIONO DAIJU (JP) 2012-04-19 US disclosed
US-20120077125-A1 RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2012-03-29 US disclosed