SCHEMBL26312799

SCHEMBL26312799

C=C(C)C(=O)OC1C2CC3C1OS(=O)(=O)C3C2C(=O)OC(CS(=O)(=O)O)C(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25844751 0.88 — —
SCHEMBL25844952 0.86 — —
SCHEMBL26490966 0.82 — —
SCHEMBL19396600 0.80 — —
SCHEMBL26312812 0.79 — —
SCHEMBL26312789 0.79 — —
SCHEMBL19756037 0.78 — —
SCHEMBL12764622 0.77 ALDH1A1 (0.30) —
SCHEMBL25527898 0.76 — —
SCHEMBL25476169 0.76 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230296981-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-21 — — US disclosed
US-20230296980-A1 RESIST MATERIAL AND PATTERN FORMING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-21 — — US disclosed
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