Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | THRB | P10828 | 1/20 | 0.52 |
| ▸ | TSHR | P16473 | 3/20 | 0.46 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.37 |
| ▸ | POLB | P06746 | 1/20 | 0.36 |
| ▸ | APEX1 | P27695 | 1/20 | 0.36 |
| ▸ | HTT | P42858 | 1/20 | 0.36 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.36 |
| ▸ | CA1 | P00915 | 2/20 | 0.32 |
| ▸ | CA2 | P00918 | 2/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL26002545 | 0.93 | TSHR (0.51) | THRBTSHRALDH1A1POLBAPEX1 | |
| SCHEMBL26002532 | 0.93 | TSHR (0.56) | THRBTSHRALDH1A1POLBAPEX1 | |
| SCHEMBL13557333 | 0.92 | THRB (0.55) | THRBTSHRALDH1A1POLBAPEX1 | |
| SCHEMBL26002883 | 0.91 | TSHR (0.59) | THRBTSHRALDH1A1POLBAPEX1 | |
| SCHEMBL2632775 | 0.89 | THRB (0.49) | THRBTSHRALDH1A1POLBAPEX1 | |
| SCHEMBL26002879 | 0.88 | THRB (0.47) | THRBTSHRALDH1A1POLBAPEX1 | |
| SCHEMBL25789190 | 0.87 | THRB (0.50) | THRBTSHRALDH1A1POLBAPEX1 | |
| SCHEMBL30883136 | 0.86 | THRB (0.46) | THRBTSHRALDH1A1POLBAPEX1 | |
| SCHEMBL14133263 | 0.86 | THRB (0.49) | THRBTSHRALDH1A1POLBAPEX1 | |
| SCHEMBL26002571 | 0.85 | TSHR (0.41) | THRBTSHRALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 119 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119285842-A | Fluorine-containing polymer, preparation method thereof and ArF immersed photoresist prepared from fluorine-containing polymer | 瑞红(苏州)电子化学品股份有限公司 | 2025-01-10 | — | — | CN | disclosed |
| US-20230400769-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| WO-2023228845-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR株式会社 | 2023-11-30 | — | — | WO | disclosed |
| WO-2023228847-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR株式会社 | 2023-11-30 | — | — | WO | disclosed |
| WO-2023228843-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR株式会社 | 2023-11-30 | — | — | WO | disclosed |
| WO-2023228841-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR株式会社 | 2023-11-30 | — | — | WO | disclosed |
| WO-2023228842-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR株式会社 | 2023-11-30 | — | — | WO | disclosed |
| WO-2023153294-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR株式会社 | 2023-08-17 | — | — | WO | disclosed |
| WO-2023153295-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR株式会社 | 2023-08-17 | — | — | WO | disclosed |
| WO-2023153296-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR株式会社 | 2023-08-17 | — | — | WO | disclosed |
| US-20120219912-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-08-30 | — | — | US | disclosed |
| US-20120171626-A1 | COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2012-07-05 | — | — | US | disclosed |
| EP-2472320-A2 | Compositions comprising base-reactive component and processes for photolithography | Rohm and Haas Electronic Materials LLC (US) | 2012-07-04 | — | — | EP | disclosed |
| US-20120156620-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-06-21 | — | — | US | disclosed |
| US-20120122030-A1 | COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY | DOW GLOBAL TECHNOLOGIES LLC (US) | 2012-05-17 | — | — | US | disclosed |
| EP-2453308-A1 | Compositions comprising base-reactive component and processes for photolithography | Rohm and Haas Electronic Materials LLC (US) | 2012-05-16 | — | — | EP | disclosed |
| US-20120100483-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-04-26 | — | — | US | disclosed |
| US-20120052443-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-03-01 | — | — | US | disclosed |
| US-20120052443-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-03-01 | — | — | US | disclosed |
| US-20110255061-A1 | COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY | ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. (US) | 2011-10-20 | — | — | US | disclosed |