⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2468239 | 0.73 | — | — | |
| Trifluoromethanesulfonic Acid SCHEMBL31410073 | 0.72 | — | — | |
| SCHEMBL26178630 | 0.71 | — | — | |
| Trifluoromethanesulfonic Acid SCHEMBL8721070 | 0.71 | ALDH1A1 (0.41) | — | |
| Trifluoromethanesulfonic Acid SCHEMBL295 | 0.68 | — | — | |
| Trifluoromethanesulfonic Acid SCHEMBL39465 | 0.68 | ALDH1A1 (0.50) | — | |
| Trifluoromethanesulfonic Acid SCHEMBL3507077 | 0.68 | — | — | |
| Trifluoromethanesulfonic Acid SCHEMBL3950101 | 0.68 | — | — | |
| Trifluoromethanesulfonic Acid SCHEMBL25293989 | 0.65 | — | — | |
| Trifluoromethanesulfonic Acid SCHEMBL25292545 | 0.65 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118908932-A | 1, 4-Oxygen sulfonium salt and preparation method thereof, and preparation method of acid-forming cationic photoinitiator | 湖北固润科技股份有限公司 | 2024-11-08 | — | — | CN | claimed |
| CN-118908932-A | 1, 4-Oxygen sulfonium salt and preparation method thereof, and preparation method of acid-forming cationic photoinitiator | 湖北固润科技股份有限公司 | 2024-11-08 | — | — | CN | disclosed |
| WO-2024019014-A1 | RADIOLABELED ACTIVATED ESTER AND PRECURSOR THEREOF | 国立大学法人東京工業大学 | 2024-01-25 | — | — | WO | disclosed |
| EP-4282887-A1 | PATTERN FORMATION METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE | FUJIFILM Corporation (JP) | 2023-11-29 | — | — | EP | disclosed |
| WO-2022158442-A1 | RADIOACTIVE HALOGEN-LABELED PRECURSOR COMPOUND | 国立大学法人東京工業大学 | 2022-07-28 | — | — | WO | disclosed |
| WO-2021039244-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, RESIST FILM, AND ELECTRONIC DEVICE PRODUCTION METHOD | 富士フイルム株式会社 | 2021-03-04 | — | — | WO | disclosed |
| US-20160274458-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ACID GENERATOR AND COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-09-22 | — | — | US | disclosed |
| EP-2438486-A1 | CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION | FujiFilm Electronic Materials USA, Inc. (US) | 2012-04-11 | — | — | EP | disclosed |
| US-8071270-B2 | Polyhydric compound and chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-12-06 | — | — | US | disclosed |
| WO-2010141444-A1 | CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) | 2010-12-09 | — | — | WO | disclosed |
| US-7670751-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-02 | — | — | US | disclosed |
| JP-2008127367-A | SULFONIUM COMPOUND FOR PRODUCING ACID GENERATOR OF CHEMICAL AMPLIFICATION TYPE RESIST COMPOSITION | SUMITOMO CHEMICAL CO LTD | 2008-06-05 | — | — | JP | disclosed |