SCHEMBL2680489

SCHEMBL2680489

CCC(C)(C)C(=O)OCCCCS(=O)(=O)O

nearest known ligand 0.34

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
CYP4F2 P78329 3/20 0.34
CYP4A11 Q02928 3/20 0.34
EPHX2 P34913 1/20 0.33
APP P05067 1/20 0.32
NAAA Q02083 1/20 0.32
S1PR1 P21453 1/20 0.32
ALDH1A1 P00352 1/20 0.31
FKBP1A P62942 1/20 0.30
EPHX1 P07099 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12026615 0.98 CYP4F2 (0.37) CYP4F2CYP4A11EPHX2APPNAAA
SCHEMBL17409257 0.98 CYP4F2 (0.37) CYP4F2CYP4A11EPHX2APPNAAA
SCHEMBL13402867 0.98 CYP4F2 (0.37) CYP4F2CYP4A11EPHX2APPNAAA
SCHEMBL2680602 0.95 CYP4F2 (0.35) CYP4F2CYP4A11EPHX2APPALDH1A1
SCHEMBL753684 0.87 CYP4F2 (0.33) CYP4F2CYP4A11
SCHEMBL15198867 0.87 MEN1 (0.31)
SCHEMBL13667082 0.85 CYP4F2 (0.42) CYP4F2CYP4A11NAAAALDH1A1FKBP1A
SCHEMBL16256497 0.85 BBOX1 (0.33)
SCHEMBL10093664 0.84 ACHE (0.33)
SCHEMBL13667073 0.83 CYP4F2 (0.46) CYP4F2CYP4A11NAAAALDH1A1EPHX1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8900793-B2 Polymer, chemically amplified resist composition, and patterning process using said chemically amplified resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-02 US disclosed
US-20120308932-A1 POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS USING SAID CHEMICALLY AMPLIFIED RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-06 US disclosed
US-8088537-B2 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-03 US disclosed
US-20110305979-A1 RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-12-15 US disclosed
US-7704671-B2 comprising hydrophilic support, undercoat layer and laser-sensitive photopolymerizable layer, wherein undercoat layer contains copolymer containing a repeating unit having at least one ethylenically unsaturated bond and repeating unit having functional group capable of interacting with surface of support FUJIFILM CORPORATION (JP) 2010-04-27 US disclosed
US-20090197200-A1 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-06 US disclosed
US-7514204-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-07 US disclosed
US-7455952-B2 Patterning process and resist overcoat material SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-11-25 US disclosed
US-20080096131-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-24 US disclosed
US-20070072116-A1 comprising hydrophilic support, undercoat layer and laser-sensitive photopolymerizable layer, wherein undercoat layer contains copolymer containing a repeating unit having at least one ethylenically unsaturated bond and repeating unit having functional group capable of interacting with surface of support FUJI PHOTO FILM CO., LTD. 2007-03-29 US disclosed