SCHEMBL2681014

SCHEMBL2681014

CC1(C(=O)OC(C)(C)C(O)(C(F)(F)F)C(F)(F)F)CC2C=CC1C2

nearest known ligand 0.33

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
P2RX7 Q99572 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21117630 0.84
SCHEMBL203304 0.83 P2RX7 (0.36) P2RX7
SCHEMBL13520497 0.83
SCHEMBL1451420 0.82 P2RX7 (0.37) P2RX7
SCHEMBL472017 0.78 P2RX7 (0.34) P2RX7
SCHEMBL21117632 0.76 P2RX7 (0.33) P2RX7
SCHEMBL21117182 0.76 P2RX7 (0.31) P2RX7
SCHEMBL21117635 0.76 CYP2D6 (0.32) P2RX7
SCHEMBL14134197 0.75 P2RX7 (0.31) P2RX7
SCHEMBL32688539 0.75 P2RX7 (0.33) P2RX7

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10996378-B2 Antireflective film, method of producing antireflective film, and eyeglass type display SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-05-04 US disclosed
US-20190196066-A1 ANTIREFLECTIVE FILM, METHOD OF PRODUCING ANTIREFLECTIVE FILM, AND EYEGLASS TYPE DISPLAY SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-06-27 US disclosed
US-8158330-B2 Resist protective coating composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-04-17 US disclosed
US-8158330-B2 Resist protective coating composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-04-17 US disclosed
US-8101335-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-24 US disclosed
US-8101335-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-24 US disclosed
US-8088537-B2 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-03 US disclosed
US-8088537-B2 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-03 US disclosed
WO-2011142403-A1 RADIATION-SENSITIVE RESIN COMPOSITION FOR IMMERSION EXPOSURE, CURING PATTERN FORMING METHOD AND CURING PATTERN JSR株式会社 (JP) 2011-11-17 WO disclosed
US-7642034-B2 Photoresists; (meth)acrylate fluoropolymer which is insoluble in water, dissolvable in aqueous alkaline solution, and immiscible with resist films so that it enables pattern formation by the immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-05 US disclosed
US-20090286182-A1 RESIST PROTECTIVE COATING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed
US-20090286182-A1 RESIST PROTECTIVE COATING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed
US-20090197200-A1 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-06 US disclosed
US-20090197200-A1 Resist top coat composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-06 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed