Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | DGAT1 | O75907 | 1/20 | 0.48 |
| ▸ | CA14 | Q9ULX7 | 2/20 | 0.32 |
| ▸ | CA12 | O43570 | 1/20 | 0.32 |
| ▸ | CA1 | P00915 | 1/20 | 0.32 |
| ▸ | CA7 | P43166 | 1/20 | 0.32 |
| ▸ | APLNR | P35414 | 1/20 | 0.32 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29321014 | 0.82 | DGAT1 (0.31) | DGAT1 | |
| SCHEMBL28330411 | 0.81 | DGAT1 (0.48) | DGAT1CA14APLNRTDP1 | |
| SCHEMBL15082441 | 0.80 | DGAT1 (0.46) | DGAT1CA14CA12CA1CA7 | |
| SCHEMBL2681191 | 0.78 | — | — | |
| SCHEMBL106943 | 0.77 | DGAT1 (0.40) | DGAT1CA14CA12CA1CA7 | |
| SCHEMBL9343918 | 0.76 | CYP4F2 (0.42) | — | |
| SCHEMBL9343921 | 0.76 | CYP4F2 (0.42) | — | |
| SCHEMBL14556922 | 0.76 | DGAT1 (0.43) | DGAT1 | |
| SCHEMBL13228002 | 0.76 | DGAT1 (0.48) | DGAT1CA14CA12CA1CA7 | |
| SCHEMBL47394 | 0.75 | DGAT1 (0.46) | DGAT1CA14CA12CA1CA7 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20120249995-A1 | RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO. LTD. (JP) | 2012-10-04 | — | — | US | disclosed |
| US-8088537-B2 | Resist top coat composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-03 | — | — | US | disclosed |
| US-7642034-B2 | Photoresists; (meth)acrylate fluoropolymer which is insoluble in water, dissolvable in aqueous alkaline solution, and immiscible with resist films so that it enables pattern formation by the immersion lithography | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-01-05 | — | — | US | disclosed |
| US-7579131-B2 | Positive resist composition and method of forming resist pattern using the same | FUJIFILM CORPORATION (JP) | 2009-08-25 | — | — | US | disclosed |
| US-20070178407-A1 | Polymer, resist protective coating material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-08-02 | — | — | US | disclosed |
| US-20070122736-A1 | RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO., LTD. | 2007-05-31 | — | — | US | disclosed |
| US-20070122741-A1 | Resist protective coating material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-31 | — | — | US | disclosed |
| US-7195856-B2 | Positive resist composition and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2007-03-27 | — | — | US | disclosed |
| US-7189492-B2 | Photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |