Predicted protein targets (top 16)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | DGAT1 | O75907 | 1/20 | 0.46 |
| ▸ | CA1 | P00915 | 2/20 | 0.33 |
| ▸ | CA7 | P43166 | 2/20 | 0.33 |
| ▸ | CA12 | O43570 | 1/20 | 0.33 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.33 |
| ▸ | CYP4F2 | P78329 | 1/20 | 0.32 |
| ▸ | CYP4A11 | Q02928 | 1/20 | 0.32 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.32 |
| ▸ | CA2 | P00918 | 1/20 | 0.31 |
| ▸ | GAA | P10253 | 2/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
| ▸ | MEN1 | O00255 | 1/20 | 0.31 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.31 |
| ▸ | RIPK1 | Q13546 | 1/20 | 0.31 |
| ▸ | CTSS | P25774 | 1/20 | 0.30 |
| ▸ | CTSK | P43235 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Acrylic Acid SCHEMBL27899676 | 0.85 | LMNA (0.39) | DGAT1ALDH1A1RIPK1 | |
| SCHEMBL17708341 | 0.85 | DGAT1 (0.33) | DGAT1CYP4F2CYP4A11RIPK1 | |
| SCHEMBL25935339 | 0.84 | DGAT1 (0.35) | DGAT1 | |
| SCHEMBL17552806 | 0.83 | DGAT1 (0.33) | DGAT1 | |
| SCHEMBL15033904 | 0.82 | CYP4F2 (0.31) | DGAT1CYP4F2CYP4A11GAA | |
| SCHEMBL132096 | 0.82 | CYP1A2 (0.33) | DGAT1CYP4F2CYP4A11GAA | |
| SCHEMBL47393 | 0.82 | ALDH1A1 (0.38) | DGAT1CYP4F2CYP4A11TDP1GAA | |
| SCHEMBL2740758 | 0.82 | CYP4F2 (0.31) | DGAT1CYP4F2CYP4A11GAA | |
| SCHEMBL14552607 | 0.81 | DGAT1 (0.35) | DGAT1CA1CA7CA12CA14 | |
| SCHEMBL10174307 | 0.80 | CYP4F2 (0.31) | CYP4F2CYP4A11RIPK1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1769 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116925366-B | Nanometer micelle composite hydrogel containing green tea essential oil and preparation method and application thereof | 广州中妆美业化妆品有限公司 | 2025-05-20 | — | — | CN | claimed |
| US-12091745-B2 | Three-dimensional nano-patterns | TECHNION RESEARCH & DEVELOPMENT FOUNDATION LIMITED (IL) | 2024-09-17 | — | — | US | claimed |
| WO-2023244116-A1 | METHOD OF MEASURING INTERNAL STRESS OF A MATERIAL | TECHNISCHE UNIVERSITEIT DELFT (NL) | 2023-12-21 | — | — | WO | claimed |
| WO-2023230011-A1 | FIRE-RESISTANT COMPOSITIONS | HEXION INC. (US) | 2023-11-30 | — | — | WO | claimed |
| CN-116925366-A | Nanometer micelle composite hydrogel containing green tea essential oil and preparation method and application thereof | 广州中妆美业化妆品有限公司 | 2023-10-24 | — | — | CN | claimed |
| CN-113856758-B | Metal composite Janus polymer nanoparticle catalyst and preparation method and application thereof | 珠海复旦创新研究院 | 2023-05-26 | — | — | CN | claimed |
| CN-114642974-B | Composite reverse osmosis membrane and preparation method thereof | 沃顿科技股份有限公司 | 2023-04-18 | — | — | CN | claimed |
| CN-110894067-B | Hollow mesoporous carbon sphere and preparation method thereof | 复旦大学 | 2023-03-07 | — | — | CN | claimed |
| CN-113072923-B | Nano capsule gel breaker with controllable delivery and release, and preparation method and application thereof | 中国石油大学(华东) | 2023-02-17 | — | — | CN | claimed |
| US-20220376162-A1 | SUPERCONDUCTOR COMPOSITES AND DEVICES COMPRISING SAME | TECHNION RESEARCH & DEVELOPMENT FOUNDATION LIMITED (IL) | 2022-11-24 | — | — | US | claimed |
| CN-115109524-A | Photocuring adhesive for invisible car cover and preparation method and application thereof | 安佐化学有限公司 | 2022-09-27 | — | — | CN | claimed |
| CN-114854170-A | Double-network-structure high-mechanical-strength environment-friendly melamine resin and preparation method thereof | 雪峰创新(北京)科技有限公司 | 2022-08-05 | — | — | CN | claimed |
| CN-114746984-A | Method for forming electrode | 周星工程股份有限公司 | 2022-07-12 | — | — | CN | claimed |
| CN-114730700-A | Apparatus for treating substrate, method for preparing the same, and method for treating substrate | 周星工程股份有限公司 | 2022-07-08 | — | — | CN | claimed |
| CN-114642974-A | Composite reverse osmosis membrane and preparation method thereof | 沃顿科技股份有限公司 | 2022-06-21 | — | — | CN | claimed |
| CN-114644738-A | Active nano latex and preparation method thereof | 清华大学 | 2022-06-21 | — | — | CN | claimed |
| US-20220170148-A1 | THREE-DIMENSIONAL NANO-PATTERNS | TECHNION RESEARCH & DEVELOPMENT FOUNDATION LIMITED (IL) | 2022-06-02 | — | — | US | claimed |
| US-11325991-B2 | All-acrylic multigraft copolymer superelastomers | UNIVERSITY OF TENNESSEE RESEARCH FOUNDATION (US) | 2022-05-10 | — | — | US | claimed |
| CN-104407501-B | Compositions and methods for photolithography | 罗门哈斯电子材料有限公司 | 2022-03-25 | — | — | CN | claimed |
| CN-121586750-A | Composition for forming silicon-containing underlayer film for directional self-assembly | 日产化学株式会社 | 2026-02-27 | — | — | CN | disclosed |
| WO-2025145193-A9 | MULTIFUNCTIONAL COMPOSITE SI AND C-BASED PARTICLES | YIELD ENGINEERING SYSTEMS, INC. (US) | 2026-02-05 | — | — | WO | disclosed |
| US-12383490-B2 | Generic high-capacity protein capture and tunable electrochemical release | NYCTEA TECHNOLOGIES AB (SE) | 2025-08-12 | — | — | US | disclosed |
| CN-116925366-B | Nanometer micelle composite hydrogel containing green tea essential oil and preparation method and application thereof | 广州中妆美业化妆品有限公司 | 2025-05-20 | — | — | CN | disclosed |
| EP-4065509-B1 | GENERIC HIGH-CAPACITY PROTEIN CAPTURE AND TUNABLE ELECTROCHEMICAL RELEASE | NYCTEA TECH AB (SE) | 2025-04-16 | — | — | EP | disclosed |
| US-12268101-B2 | Superconductor composites and devices comprising same | TECHNION RESEARCH &DEVELOPMENT FOUNDATION LIMITED (IL) | 2025-04-01 | — | — | US | disclosed |
| CN-119114035-A | Preparation method of porous organic carrier PtBuMA loaded nZVI adsorbent and application of porous organic carrier PtBuMA loaded nZVI adsorbent in adsorption of heavy metal ions in water | 常州大学 | 2024-12-13 | — | — | CN | disclosed |
| CN-118922783-A | Brush material for self-assembled films | 日产化学株式会社 | 2024-11-08 | — | — | CN | disclosed |
| CN-117924990-B | Solvent-free epoxy resin putty and preparation method thereof | 上海昊锌科技有限公司 | 2024-10-22 | — | — | CN | disclosed |
| WO-2024211279-A2 | GRAVITY RESPONSIVE WOBBLE PARTICLE AND METHODS OF USE | DIAMETRYX INC. (US) | 2024-10-10 | — | — | WO | disclosed |
| US-12091745-B2 | Three-dimensional nano-patterns | TECHNION RESEARCH & DEVELOPMENT FOUNDATION LIMITED (IL) | 2024-09-17 | — | — | US | disclosed |
| CN-115721725-B | PH/GSH double-response nano-drug carrier targeting liver cancer cells and preparation method thereof | 中国石油大学(华东) | 2024-09-13 | — | — | CN | disclosed |
| US-20240241444-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2024-07-18 | — | — | US | disclosed |
| US-12032288-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| US-20240219359-A1 | METHOD FOR INSPECTING TREATMENT LIQUID AND METHOD FOR PRODUCING TREATMENT LIQUID | FUJIFILM CORPORATION (JP) | 2024-07-04 | — | — | US | disclosed |
| US-20240219830-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2024-07-04 | — | — | US | disclosed |
| US-20240210824-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2024-06-27 | — | — | US | disclosed |
| US-20240141404-A1 | POLYMER, REAGENT LAYER, AND SENSOR | PHC HOLDINGS CORPORATION (JP) | 2024-05-02 | — | — | US | disclosed |
| CN-117924990-A | Solvent-free epoxy resin putty and preparation method thereof | 上海昊锌科技有限公司 | 2024-04-26 | — | — | CN | disclosed |
| CN-117525748-A | Sustained-release alkali metal secondary battery diaphragm and preparation method thereof | 中国科学院化学研究所 | 2024-02-06 | — | — | CN | disclosed |
| US-20240027908-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2024-01-25 | — | — | US | disclosed |
| US-11874601-B2 | Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2024-01-16 | — | — | US | disclosed |
| US-20230400769-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-11840503-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-12-12 | — | — | US | disclosed |
| US-11835857-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| WO-2023230011-A1 | FIRE-RESISTANT COMPOSITIONS | HEXION INC. (US) | 2023-11-30 | — | — | WO | disclosed |
| US-20230384674-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-11-30 | — | — | US | disclosed |
| US-11829069-B2 | Photoresist compositions and methods | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2023-11-28 | — | — | US | disclosed |
| US-11829068-B2 | Resist composition, method of forming resist pattern, compound, and resin | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-28 | — | — | US | disclosed |
| US-11822244-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11822240-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11820735-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-11822242-B2 | DNQ-type photoresist composition including alkali-soluble acrylic resins | MERCK PATENT GMBH (DE) | 2023-11-21 | — | — | US | disclosed |
| US-11822241-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-21 | — | — | US | disclosed |
| US-20230367212-A1 | PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-11-16 | — | — | US | disclosed |
| US-11815813-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-11-14 | — | — | US | disclosed |
| US-20230350290-A1 | PATTERN FORMING METHOD, KIT, AND RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2023-11-02 | — | — | US | disclosed |
| US-20230350289-A1 | COMPOSITION FOR FORMING UNDERLAYER FILM, COLOR FILTER, METHOD FOR MANUFACTURING COLOR FILTER, SOLID-STATE IMAGING ELEMENT, AND IMAGE DISPLAY DEVICE | FUJIFILM CORPORATION (JP) | 2023-11-02 | — | — | US | disclosed |
| CN-116925366-A | Nanometer micelle composite hydrogel containing green tea essential oil and preparation method and application thereof | 广州中妆美业化妆品有限公司 | 2023-10-24 | — | — | CN | disclosed |
| US-20230333478-A1 | PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND KIT | FUJIFILM CORPORATION (JP) | 2023-10-19 | — | — | US | disclosed |
| US-11782342-B2 | Salt and photoresist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-10-10 | — | — | US | disclosed |
| US-11780946-B2 | Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-10-10 | — | — | US | disclosed |
| US-20230314938-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-10-05 | — | — | US | disclosed |
| US-20230314939-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-10-05 | — | — | US | disclosed |
| US-20230314941-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-10-05 | — | — | US | disclosed |
| US-11773266-B2 | Polymer, molded body, foam, resin composition, and production method for polymer | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-10-03 | — | — | US | disclosed |
| US-20230305395-A1 | SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-09-28 | — | — | US | disclosed |
| US-20230305391-A1 | SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-09-28 | — | — | US | disclosed |
| US-20230305392-A1 | SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-09-28 | — | — | US | disclosed |
| US-11768435-B2 | Bottom-up conformal coating and photopatterning on PAG-immobilized surfaces | BREWER SCIENCE, INC. (US) | 2023-09-26 | — | — | US | disclosed |
| US-11762288-B2 | Resist composition, method of forming resist pattern, and acid diffusion-controlling agent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-11759749-B2 | Filtering device, purification device, and method for manufacturing chemical liquid | FUJIFILM CORPORATION (JP) | 2023-09-19 | — | — | US | disclosed |
| US-11754922-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-12 | — | — | US | disclosed |
| US-11754926-B2 | Method of forming resist pattern, resist composition and method of producing the same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-12 | — | — | US | disclosed |
| US-11747727-B2 | Chemical liquid, chemical liquid storage body, pattern forming method, and kit | FUJIFILM CORPORATION (JP) | 2023-09-05 | — | — | US | disclosed |
| US-11747726-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-09-05 | — | — | US | disclosed |
| US-11745531-B2 | Printing plate precursor, printing plate precursor laminate, method for making printing plate, and printing method | FUJIFILM CORPORATION (JP) | 2023-09-05 | — | — | US | disclosed |
| US-11740555-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-08-29 | — | — | US | disclosed |
| US-11739056-B2 | Carboxylate, carboxylic acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-08-29 | — | — | US | disclosed |
| US-20230266666-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-08-24 | — | — | US | disclosed |
| US-11733611-B2 | Pattern forming method, method for producing electronic device, and kit | FUJIFILM CORPORATION (JP) | 2023-08-22 | — | — | US | disclosed |
| CN-108342049-B | Physical split-phase dynamic polymer and application thereof | 厦门天策材料科技有限公司 | 2023-08-22 | — | — | CN | disclosed |
| US-20230261252-A1 | INORGANIC SOLID ELECTROLYTE-CONTAINING COMPOSITION, SHEET FOR ALL-SOLID STATE SECONDARY BATTERY, AND ALL-SOLID STATE SECONDARY BATTERY, AND MANUFACTURING METHODS FOR SHEET FOR ALL-SOLID STATE SECONDARY BATTERY AND ALL-SOLID STATE SECONDARY BATTERY | FUJIFILM CORPORATION (JP) | 2023-08-17 | — | — | US | disclosed |
| US-20230259029-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-08-17 | — | — | US | disclosed |
| US-20230236502-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-07-27 | — | — | US | disclosed |
| EP-4214553-A1 | TECHNIQUES FOR MANUFACTURING VARIABLE ETCH DEPTH GRATINGS USING GRAY-TONE LITHOGRAPHY | META PLATFORMS TECHNOLOGIES, LLC (US) | 2023-07-26 | — | — | EP | disclosed |
| US-11709422-B2 | Gray-tone lithography for precise control of grating etch depth | META PLATFORMS TECHNOLOGIES, LLC (US) | 2023-07-25 | — | — | US | disclosed |
| US-11709425-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-25 | — | — | US | disclosed |
| US-20230229078-A1 | CHEMICAL LIQUID SUPPLY METHOD AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2023-07-20 | — | — | US | disclosed |
| US-11703757-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-18 | — | — | US | disclosed |
| US-11703758-B2 | Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-07-18 | — | — | US | disclosed |
| CN-114644738-B | Active nano emulsion and preparation method thereof | 清华大学 | 2023-07-14 | — | — | CN | disclosed |
| US-20230221643-A1 | HARD MASK-FORMING COMPOSITION AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT | TOKYO OHKA KOGYO CO LTD (JP) | 2023-07-13 | — | — | US | disclosed |
| US-11693313-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-04 | — | — | US | disclosed |
| US-11693321-B2 | Treatment liquid for manufacturing semiconductor, storage container storing treatment liquid for manufacturing semiconductor, pattern forming method, and method of manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-07-04 | — | — | US | disclosed |
| US-11692050-B2 | Photo-alignment copolymer, binder composition, binder layer, optical laminate, and image display device | FUJIFILM CORPORATION (JP) | 2023-07-04 | — | — | US | disclosed |
| US-20230194986-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-22 | — | — | US | disclosed |
| US-11681224-B2 | Resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-06-20 | — | — | US | disclosed |
| US-11681220-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-06-20 | — | — | US | disclosed |
| US-11681218-B2 | Compound, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-06-20 | — | — | US | disclosed |
| US-20230185192-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-06-15 | — | — | US | disclosed |
| US-11675267-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-06-13 | — | — | US | disclosed |
| WO-2023097826-A1 | KRF LIGHT SOURCE THICK FILM PHOTORESIST COMPOSITION, PREPARATION METHOD THEREFOR AND USE METHOD THEREOF | 上海新阳半导体材料股份有限公司 | 2023-06-08 | — | — | WO | disclosed |
| US-20230168581-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-06-01 | — | — | US | disclosed |
| CN-113856758-B | Metal composite Janus polymer nanoparticle catalyst and preparation method and application thereof | 珠海复旦创新研究院 | 2023-05-26 | — | — | CN | disclosed |
| US-20230159752-A1 | RESIN COMPOSITION, FILM, OPTICAL FILTER, SOLID-STATE IMAGING ELEMENT, AND IMAGE DISPLAY DEVICE | FUJIFILM CORPORATION (JP) | 2023-05-25 | — | — | US | disclosed |
| US-20230161244-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-05-25 | — | — | US | disclosed |
| US-20230161256-A1 | SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-05-25 | — | — | US | disclosed |
| US-20230161253-A1 | ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-05-25 | — | — | US | disclosed |
| US-20230161250-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-05-25 | — | — | US | disclosed |
| US-20230161243-A1 | SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-05-25 | — | — | US | disclosed |
| US-11656548-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, mask blank with resist film, method for producing photomask, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-05-23 | — | — | US | disclosed |
| US-11656549-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-05-23 | — | — | US | disclosed |
| US-20230152693-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-05-18 | — | — | US | disclosed |
| US-20230152691-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-05-18 | — | — | US | disclosed |
| US-11650503-B2 | Hard mask-forming composition and method for manufacturing electronic component | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-05-16 | — | — | US | disclosed |
| US-11650497-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-05-16 | — | — | US | disclosed |
| US-20230148344-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND METHOD FOR PRODUCING COMPOUND | FUJIFILM CORPORATION (JP) | 2023-05-11 | — | — | US | disclosed |
| US-20230146890-A1 | SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-05-11 | — | — | US | disclosed |
| US-11644751-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-05-09 | — | — | US | disclosed |
| US-20230139009-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-05-04 | — | — | US | disclosed |
| US-20230139891-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND | FUJIFILM CORPORATION (JP) | 2023-05-04 | — | — | US | disclosed |
| US-20230133710-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-05-04 | — | — | US | disclosed |
| US-20230132693-A1 | RINSING LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2023-05-04 | — | — | US | disclosed |
| US-20230135117-A1 | SOLUTION, SOLUTION STORAGE BODY, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE | FUJIFILM CORPORATION (JP) | 2023-05-04 | — | — | US | disclosed |
| US-20230139896-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-05-04 | — | — | US | disclosed |
| US-11640114-B2 | Compound, resin, photoresist composition and process for producing photoresist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-05-02 | — | — | US | disclosed |
| US-20230129965-A1 | HYDROPHILIC AND OLEOPHOBIC POLYMER | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-04-27 | — | — | US | disclosed |
| US-20230126240-A1 | COLORING COMPOSITION, FILM, OPTICAL FILTER, SOLID-STATE IMAGING ELEMENT, IMAGE DISPLAY DEVICE, AND COMPOUND | FUJIFILM CORPORATION (JP) | 2023-04-27 | — | — | US | disclosed |
| US-20230131561-A1 | COLORING COMPOSITION, FILM, OPTICAL FILTER, SOLID-STATE IMAGING ELEMENT AND IMAGE DISPLAY DEVICE | FUJIFILM CORPORATION (JP) | 2023-04-27 | — | — | US | disclosed |
| CN-115996636-A | Methods and compositions for plywood products | 阿尔萨达股份公司 | 2023-04-21 | — | — | CN | disclosed |
| CN-111406059-B | Europium complexes | 东曹株式会社 | 2023-04-18 | — | — | CN | disclosed |
| CN-114642974-B | Composite reverse osmosis membrane and preparation method thereof | 沃顿科技股份有限公司 | 2023-04-18 | — | — | CN | disclosed |
| CN-115895016-A | Polymethacrylimide wave-absorbing foam and preparation method thereof | 湖南博翔新材料有限公司 | 2023-04-04 | — | — | CN | disclosed |
| CN-110894067-B | Hollow mesoporous carbon sphere and preparation method thereof | 复旦大学 | 2023-03-07 | — | — | CN | disclosed |
| CN-115721725-A | PH/GSH dual-response type nano-drug carrier targeting hepatoma cells and preparation method thereof | 中国石油大学(华东) | 2023-03-03 | — | — | CN | disclosed |
| CN-113072923-B | Nano capsule gel breaker with controllable delivery and release, and preparation method and application thereof | 中国石油大学(华东) | 2023-02-17 | — | — | CN | disclosed |
| CN-110330584-B | Flame-retardant smoke-suppression light high-strength high polymer material and preparation method thereof | 深圳市方科马新材料有限公司 | 2023-02-03 | — | — | CN | disclosed |
| CN-115685684-A | Photosensitive composition, photosensitive composition layer, transfer film, and method for producing laminate having conductor pattern | 富士胶片株式会社 | 2023-02-03 | — | — | CN | disclosed |
| WO-2023005841-A1 | POLYPEPTIDE COMPOUNDS CONTAINING LACTAM BRIDGES | 南京明德新药研发有限公司 | 2023-02-02 | — | — | WO | disclosed |
| WO-2023004387-A1 | BIOMIMETIC, REACTIVE OXYGEN SPECIES-DETONABLE NANOCLUSTERS FOR ANTIRESTENOTIC THERAPY | UNIVERSITY OF VIRGINIA PATENT FOUNDATION (US) | 2023-01-26 | — | — | WO | disclosed |
| US-20220409726-A1 | GENERIC HIGH-CAPACITY PROTEIN CAPTURE AND TUNABLE ELECTROCHEMICAL RELEASE | NYCTEA TECHNOLOGIES AB (SE) | 2022-12-29 | — | — | US | disclosed |
| US-20220376162-A1 | SUPERCONDUCTOR COMPOSITES AND DEVICES COMPRISING SAME | TECHNION RESEARCH & DEVELOPMENT FOUNDATION LIMITED (IL) | 2022-11-24 | — | — | US | disclosed |
| CN-115279744-A | Modified thioxanthone photoinitiators | 林特弗德有限公司 | 2022-11-01 | — | — | CN | disclosed |
| US-20220334076-A1 | ELECTRODE SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND BIOSENSOR USING ELECTRODE SUBSTRATE | PHC HOLDINGS CORPORATION (JP) | 2022-10-20 | — | — | US | disclosed |
| CN-115183900-A | Application of 3D photonic crystal metamaterial thin film in preparation of time-temperature indicator | 复旦大学 | 2022-10-14 | — | — | CN | disclosed |
| EP-4065509-A1 | GENERIC HIGH-CAPACITY PROTEIN CAPTURE AND TUNABLE ELECTROCHEMICAL RELEASE | Nyctea Technologies AB (SE) | 2022-10-05 | — | — | EP | disclosed |
| US-11459420-B2 | Block copolymers, membranes and methods | The Florida State University Research Foundation, Inc. (US) | 2022-10-04 | — | — | US | disclosed |
| CN-115109524-A | Photocuring adhesive for invisible car cover and preparation method and application thereof | 安佐化学有限公司 | 2022-09-27 | — | — | CN | disclosed |
| EP-4038127-A1 | POLYTHIOPHENES IN ORGANIC SOLVENTS | Heraeus Deutschland GmbH & Co. KG (DE) | 2022-08-10 | — | — | EP | disclosed |
| CN-114854170-A | Double-network-structure high-mechanical-strength environment-friendly melamine resin and preparation method thereof | 雪峰创新(北京)科技有限公司 | 2022-08-05 | — | — | CN | disclosed |
| EP-4033234-A1 | ELECTRODE SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND BIOSENSOR USING ELECTRODE SUBSTRATE | PHC Holdings Corporation (JP) | 2022-07-27 | — | — | EP | disclosed |
| CN-114746984-A | Method for forming electrode | 周星工程股份有限公司 | 2022-07-12 | — | — | CN | disclosed |
| CN-114730700-A | Apparatus for treating substrate, method for preparing the same, and method for treating substrate | 周星工程股份有限公司 | 2022-07-08 | — | — | CN | disclosed |
| CN-114642974-A | Composite reverse osmosis membrane and preparation method thereof | 沃顿科技股份有限公司 | 2022-06-21 | — | — | CN | disclosed |
| CN-114644738-A | Active nano latex and preparation method thereof | 清华大学 | 2022-06-21 | — | — | CN | disclosed |
| CN-114621710-A | Adhesive for invisible car cover and preparation method and application thereof | 安佐化学有限公司 | 2022-06-14 | — | — | CN | disclosed |
| US-20220170148-A1 | THREE-DIMENSIONAL NANO-PATTERNS | TECHNION RESEARCH & DEVELOPMENT FOUNDATION LIMITED (IL) | 2022-06-02 | — | — | US | disclosed |
| US-11325991-B2 | All-acrylic multigraft copolymer superelastomers | UNIVERSITY OF TENNESSEE RESEARCH FOUNDATION (US) | 2022-05-10 | — | — | US | disclosed |
| CN-112062816-B | Polypeptide with pH sensitivity, polypeptide-polymer conjugate, preparation method and application | 河南中医药大学 | 2022-03-29 | — | — | CN | disclosed |
| CN-104407501-B | Compositions and methods for photolithography | 罗门哈斯电子材料有限公司 | 2022-03-25 | — | — | CN | disclosed |
| WO-2022060485-A1 | TECHNIQUES FOR MANUFACTURING VARIABLE ETCH DEPTH GRATINGS USING GRAY-TONE LITHOGRAPHY | FACEBOOK TECHNOLOGIES, LLC (US) | 2022-03-24 | — | — | WO | disclosed |
| CN-114207050-A | Composite particles comprising a hydrophobic dye and an amphiphilic block copolymer and their use in optical applications | 史密斯实验室公司 | 2022-03-18 | — | — | CN | disclosed |
| US-20220082936-A1 | GRAY-TONE LITHOGRAPHY FOR PRECISE CONTROL OF GRATING ETCH DEPTH | META PLATFORMS TECHNOLOGIES, LLC | 2022-03-17 | — | — | US | disclosed |
| US-20220082739-A1 | TECHNIQUES FOR MANUFACTURING VARIABLE ETCH DEPTH GRATINGS USING GRAY-TONE LITHOGRAPHY | META PLATFORMS TECHNOLOGIES, LLC | 2022-03-17 | — | — | US | disclosed |
| CN-114044843-A | Photoresist resin and preparation method and application thereof | 宁波南大光电材料有限公司 | 2022-02-15 | — | — | CN | disclosed |
| US-20180217499-A1 | TREATMENT LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2018-08-02 | — | — | US | disclosed |
| US-20180217503-A1 | TREATMENT LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2018-08-02 | — | — | US | disclosed |
| US-20180217497-A1 | PATTERN FORMING METHOD AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION | FUJIFILM CORPORATION (JP) | 2018-08-02 | — | — | US | disclosed |
| US-20180210339-A1 | RESIST COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE, EACH USING RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2018-07-26 | — | — | US | disclosed |
| US-10031419-B2 | Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device | FUJIFILM CORPORATION (JP) | 2018-07-24 | — | — | US | disclosed |
| US-10018913-B2 | Active-light-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-20180186907-A1 | DEVELOPER, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD | FUJIFILM CORPORATION (JP) | 2018-07-05 | — | — | US | disclosed |
| US-20180180996-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND LAMINATE | FUJIFILM CORPORATION (JP) | 2018-06-28 | — | — | US | disclosed |
| US-20180181003-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND LAMINATE | FUJIFILM CORPORATION (JP) | 2018-06-28 | — | — | US | disclosed |
| US-20180175299-A1 | ORGANIC THIN FILM TRANSISTOR, METHOD OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING ORGANIC SEMICONDUCTOR FILM | FUJIFILM CORPORATION (JP) | 2018-06-21 | — | — | US | disclosed |
| US-9996002-B2 | Resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-06-12 | — | — | US | disclosed |
| US-9996003-B2 | Active-light-sensitive or radiation-sensitive resin composition, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2018-06-12 | — | — | US | disclosed |
| US-9994538-B2 | Latent acids and their use | BASF SE (DE) | 2018-06-12 | — | — | US | disclosed |
| US-9983478-B2 | Resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-05-29 | — | — | US | disclosed |
| US-9977328-B2 | Chemically amplified positive-type photosensitive resin composition for thick film | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-05-22 | — | — | US | disclosed |
| US-9977331-B2 | Resist overlayer film forming composition and method for producing semiconductor device including the same | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-05-22 | — | — | US | disclosed |
| US-9971241-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-05-15 | — | — | US | disclosed |
| US-20180120706-A1 | PATTERN FORMING METHOD, LAMINATE, AND RESIST COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT | FUJIFILM CORPORATION (JP) | 2018-05-03 | — | — | US | disclosed |
| US-20180118968-A1 | TOPCOAT COMPOSITIONS CONTAINING FLUORINATED THERMAL ACID GENERATORS | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2018-05-03 | — | — | US | disclosed |
| US-20180120708-A1 | RINSING LIQUID, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD | FUJIFILM CORPORATION (JP) | 2018-05-03 | — | — | US | disclosed |
| US-9958775-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blanks including actinic ray-sensitive or radiation-sensitive film, pattern forming method and photomask | FUJIFILM CORPORATION (JP) | 2018-05-01 | — | — | US | disclosed |
| US-20180113382-A1 | SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-04-26 | — | — | US | disclosed |
| US-9951159-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-04-24 | — | — | US | disclosed |
| US-9952509-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2018-04-24 | — | — | US | disclosed |
| US-9946157-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-04-17 | — | — | US | disclosed |
| US-20180101100-A1 | TREATMENT LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2018-04-12 | — | — | US | disclosed |
| US-20180087010-A1 | PRE-RINSING LIQUID, PRE-RINSING TREATMENT METHOD, AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2018-03-29 | — | — | US | disclosed |
| US-9927705-B2 | Additive for resist underlayer film-forming composition and resist underlayer film-forming composition containing the same | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-03-27 | — | — | US | disclosed |
| US-9929376-B2 | Laminate, kit for manufacturing organic semiconductor, and resist composition for manufacturing organic semiconductor | FUJIFILM CORPORATION (JP) | 2018-03-27 | — | — | US | disclosed |
| US-20180081277-A1 | PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOSITION FOR FORMING UPPER LAYER FILM | FUJIFILM CORPORATION (JP) | 2018-03-22 | — | — | US | disclosed |
| US-20180081269-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-03-22 | — | — | US | disclosed |
| US-9915870-B2 | Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device | FUJIFILM CORPORATION (JP) | 2018-03-13 | — | — | US | disclosed |
| US-20180065924-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-03-08 | — | — | US | disclosed |
| US-20180065925-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-03-08 | — | — | US | disclosed |
| US-20180067394-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-03-08 | — | — | US | disclosed |
| US-9904167-B2 | Compound, active light sensitive or radiation sensitive resin composition, resist film using same, resist-coated mask blank, photomask, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2018-02-27 | — | — | US | disclosed |
| US-9904168-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2018-02-27 | — | — | US | disclosed |
| US-9897922-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2018-02-20 | — | — | US | disclosed |
| US-9889695-B2 | Image recording method | FUJIFILM CORPORATION (JP) | 2018-02-13 | — | — | US | disclosed |
| US-9885956-B2 | Pattern forming method, and, electronic device producing method and electronic device, each using the same | FUJIFILM CORPORATION (JP) | 2018-02-06 | — | — | US | disclosed |
| US-20180030175-A1 | POLYMER | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-02-01 | — | — | US | disclosed |
| US-20180031969-A1 | COMPOUND, RESIN AND PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-02-01 | — | — | US | disclosed |
| US-9880472-B2 | Pattern formation method, pattern, and etching method, electronic device manufacturing method, and electronic device using same | FUJIFILM CORPORATION (JP) | 2018-01-30 | — | — | US | disclosed |
| US-9880466-B2 | Salt, acid generator, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-01-30 | — | — | US | disclosed |
| US-20180022836-A1 | WATER DISPERSION OF GEL PARTICLES, PRODUCING METHOD THEREOF, AND IMAGE FORMING METHOD | FUJIFILM CORPORATION (JP) | 2018-01-25 | — | — | US | disclosed |
| US-9869929-B2 | Resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-01-16 | — | — | US | disclosed |
| US-9869930-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-01-16 | — | — | US | disclosed |
| US-20180009775-A1 | LATENT ACIDS AND THEIR USE | BASF SE (DE) | 2018-01-11 | — | — | US | disclosed |
| US-20180011406-A1 | PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOSITION FOR FORMING UPPER LAYER FILM | FUJIFILM CORPORATION (JP) | 2018-01-11 | — | — | US | disclosed |
| US-9857683-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2018-01-02 | — | — | US | disclosed |
| US-20170371241-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-12-28 | — | — | US | disclosed |
| US-20170371244-A1 | COMPOSITION FOR FORMING UPPER LAYER FILM, PATTERN FORMING METHOD, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-12-28 | — | — | US | disclosed |
| US-20170369697-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-12-28 | — | — | US | disclosed |
| US-9851637-B2 | Resist composition, method of forming resist pattern, compound, and acid diffusion control agent | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-12-26 | — | — | US | disclosed |
| US-9850350-B2 | Block copolymer, method of producing block copolymer, and method of producing structure containing phase-separated structure | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-12-26 | — | — | US | disclosed |
| US-9841679-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-12-12 | — | — | US | disclosed |
| US-20170351176-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-12-07 | — | — | US | disclosed |
| US-20170349774-A1 | INK SET AND IMAGE FORMING METHOD | FUJIFILM CORPORATION (JP) | 2017-12-07 | — | — | US | disclosed |
| US-20170351179-A1 | COMPOSITION FOR FORMING UPPER LAYER FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-12-07 | — | — | US | disclosed |
| US-20170349686-A1 | PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-12-07 | — | — | US | disclosed |
| US-9835945-B2 | Positive resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2017-12-05 | — | — | US | disclosed |
| US-20170340628-A1 | PROTEIN PHOSPHATASE 2A INHIBITORS FOR TREATING MYELODYSPLASTIC SYNDROMES | H. LEE MOFFITT CANCER CENTER AND RESEARCH INSTITUTE, INC. (US) | 2017-11-30 | — | — | US | disclosed |
| US-20170343897-A1 | CHEMICAL FOR PHOTOLITHOGRAPHY WITH IMPROVED LIQUID TRANSFER PROPERTY AND RESIST COMPOSITION COMPRISING THE SAME | TOKYO OHKA KOGYO CO LTD (JP) | 2017-11-30 | — | — | US | disclosed |
| US-9829796-B2 | Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-11-28 | — | — | US | disclosed |
| US-9822060-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-11-21 | — | — | US | disclosed |
| US-9822060-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-11-21 | — | — | US | disclosed |
| US-20170329224-A1 | PROCESS FOR PRODUCING PHOTORESIST PATTERN AND PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-11-16 | — | — | US | disclosed |
| US-20170329223-A1 | PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-11-16 | — | — | US | disclosed |
| US-20170329219-A1 | PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-11-16 | — | — | US | disclosed |
| US-20170322490-A1 | PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT | FUJIFILM CORPORATION (JP) | 2017-11-09 | — | — | US | disclosed |
| US-9810981-B2 | Pattern formation method, etching method, electronic device manufacturing method, and electronic device | FUJIFILM CORPORATION (JP) | 2017-11-07 | — | — | US | disclosed |
| US-9810981-B2 | Pattern formation method, etching method, electronic device manufacturing method, and electronic device | FUJIFILM CORPORATION (JP) | 2017-11-07 | — | — | US | disclosed |
| US-9809669-B2 | Salt, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-11-07 | — | — | US | disclosed |
| US-20170315444-A1 | CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-11-02 | — | — | US | disclosed |
| US-9805943-B2 | Polymer for resist under layer film composition, resist under layer film composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-10-31 | — | — | US | disclosed |
| US-9798235-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2017-10-24 | — | — | US | disclosed |
| US-9799832-B2 | Organic thin-film transistor and method for manufacturing same | FUJIFILM CORPORATION (JP) | 2017-10-24 | — | — | US | disclosed |
| US-9791777-B2 | Active light sensitive or radiation sensitive resin composition, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-10-17 | — | — | US | disclosed |
| US-20170293223-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID DIFFUSION CONTROL AGENT | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-10-12 | — | — | US | disclosed |
| US-20170285469-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO, CO., LTD. (JP) | 2017-10-05 | — | — | US | disclosed |
| US-20170285482-A1 | ORGANIC PROCESSING LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2017-10-05 | — | — | US | disclosed |
| EP-2593594-B1 | ANTIBODY LIBRARIES | ADIMAB LLC (US) | 2017-09-27 | — | — | EP | disclosed |
| US-9771346-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-09-26 | — | — | US | disclosed |
| US-9766547-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-09-19 | — | — | US | disclosed |
| US-9760003-B2 | Pattern forming method and actinic-ray- or radiation-sensitive resin composition | FUJIFILM CORPORATION (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9760005-B2 | Salt, acid generator, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9758466-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-09-12 | — | — | US | disclosed |
| US-20170255098-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2017-09-07 | — | — | US | disclosed |
| US-20170247323-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-08-31 | — | — | US | disclosed |
| US-9746771-B2 | Laminate body | FUJIFILM CORPORATION (JP) | 2017-08-29 | — | — | US | disclosed |
| US-9740097-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9740100-B2 | Hemiacetal compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9740100-B2 | Hemiacetal compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9740105-B2 | Resist pattern formation method and resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9740102-B2 | Photoresist composition and method for producing photoresist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9725436-B2 | Cytochrome P450 inhibitors and their method of use | CORTENDO AB (PUBL) (US) | 2017-08-08 | — | — | US | disclosed |
| EP-2791103-B1 | DERIVATIVES OF BETULIN | GLAXOSMITHKLINE LLC (US) | 2017-08-02 | — | — | EP | disclosed |
| US-9720319-B2 | Colored composition, cured film, color filter, method for manufacturing color filter, solid-state imaging element, image display device, and compound | FUJIFILM CORPORATION (JP) | 2017-08-01 | — | — | US | disclosed |
| US-9718901-B2 | Resin composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2017-08-01 | — | — | US | disclosed |
| US-9709892-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same | FUJIFILM CORPORATION (JP) | 2017-07-18 | — | — | US | disclosed |
| US-9709891-B2 | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2017-07-18 | — | — | US | disclosed |
| CN-104837818-B | It can be used as the acid amides of pyridine 2 of CB2 activators | 霍夫曼-拉罗奇有限公司 | 2017-07-14 | — | — | CN | disclosed |
| US-20170199460-A1 | PATTERN FORMING METHOD, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-07-13 | — | — | US | disclosed |
| US-20170199461-A1 | PATTERN FORMING METHOD, RESIST PATTERN, AND PROCESS FOR PRODUCING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-07-13 | — | — | US | disclosed |
| US-20170199455-A1 | METHOD FOR FORMING NEGATIVE TONE PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION | FUJIFILM CORPORATION (JP) | 2017-07-13 | — | — | US | disclosed |
| US-9703196-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2017-07-11 | — | — | US | disclosed |
| US-20170192355-A1 | METHOD FOR FORMING NEGATIVE TONE PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION | FUJIFILM CORPORATION (JP) | 2017-07-06 | — | — | US | disclosed |
| US-20170190923-A1 | NEAR-INFRARED ABSORPTION COMPOSITION, CURABLE COMPOSITION, CURED FILM, NEAR-INFRARED CUT FILTER, SOLID-STATE IMAGING DEVICE, INFRARED SENSOR, CAMERA MODULE, PROCESSED COLORING AGENT, AND METHOD OF MANUFACTURING PROCESSED COLORING AGENT | FUJIFILM CORPORATION (JP) | 2017-07-06 | — | — | US | disclosed |
| US-20170184974-A1 | PATTERN FORMING METHOD, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-29 | — | — | US | disclosed |
| US-20170182828-A1 | IMAGE RECORDING METHOD | FUJIFILM CORPORATION (JP) | 2017-06-29 | — | — | US | disclosed |
| US-20170184973-A1 | ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-29 | — | — | US | disclosed |
| US-20170184970-A1 | PATTERN FORMING METHOD, COMPOSITION FOR FORMING UPPER LAYER FILM, RESIST PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-29 | — | — | US | disclosed |
| US-20170176862-A1 | PATTERN FORMING METHOD, COMPOSITION FOR FORMING PROTECTIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-22 | — | — | US | disclosed |
| US-20170176855-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ACID GENERATOR AND COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-06-22 | — | — | US | disclosed |
| US-20170168394-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-15 | — | — | US | disclosed |
| US-20170168393-A1 | PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-06-15 | — | — | US | disclosed |
| US-20170158905-A1 | RESIN COMPOSITION FOR UNDERLAYER FILM FORMATION, LAYERED PRODUCT, METHOD FOR FORMING PATTERN, IMPRINT FORMING KIT, AND PROCESS FOR PRODUCING DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-08 | — | — | US | disclosed |
| US-9671692-B2 | Compound, resin and photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-06-06 | — | — | US | disclosed |
| US-9671691-B2 | Resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-06-06 | — | — | US | disclosed |
| US-9665002-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-30 | — | — | US | disclosed |
| US-9665002-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-30 | — | — | US | disclosed |
| US-20170146907-A1 | RESIN COMPOSITION FOR UNDERLAYER FILM FORMATION, LAYERED PRODUCT, METHOD FOR FORMING PATTERN, IMPRINT FORMING KIT AND PROCESS FOR PRODUCING DEVICE | FUJIFILM CORPORATION (JP) | 2017-05-25 | — | — | US | disclosed |
| US-20170146908-A1 | PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME | FUJIFILM CORPORATION (JP) | 2017-05-25 | — | — | US | disclosed |
| US-9651863-B2 | Pattern forming method, active light sensitive or radiation sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-05-16 | — | — | US | disclosed |
| US-9644056-B2 | Compound, resin and photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-05-09 | — | — | US | disclosed |
| US-9645490-B2 | Salt, acid generator, photoresist composition, and method for producing photoresist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-05-09 | — | — | US | disclosed |
| US-20170123318-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME | FUJIFILM CORPORATION (JP) | 2017-05-04 | — | — | US | disclosed |
| US-20170121437-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK | FUJIFILM CORPORATION (JP) | 2017-05-04 | — | — | US | disclosed |
| US-9638997-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-05-02 | — | — | US | disclosed |
| US-9638996-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-05-02 | — | — | US | disclosed |
| US-20170115571-A1 | PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME | FUJIFILM CORPORATION (JP) | 2017-04-27 | — | — | US | disclosed |
| US-20170115568-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-04-27 | — | — | US | disclosed |
| US-20170115569-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-04-27 | — | — | US | disclosed |
| US-9630989-B2 | Dipeptide analogs for treating conditions associated with amyloid fibril formation | RAMOT AT TEL-AVIV UNIVERSITY LTD. (IL) | 2017-04-25 | — | — | US | disclosed |
| US-9632410-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, resist-coated mask blank, photomask and pattern forming method, and method for producing electronic device using them, and electronic device | FUJIFILM CORPORATION (JP) | 2017-04-25 | — | — | US | disclosed |
| US-9625813-B2 | Chemical amplification resist composition, resist film using the composition, resist-coated mask blanks, resist pattern forming method, photomask and polymer compound | FUJIFILM CORPORATION (JP) | 2017-04-18 | — | — | US | disclosed |
| US-20170102618-A1 | METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2017-04-13 | — | — | US | disclosed |
| US-9618850-B2 | Pattern forming process and shrink agent | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-11 | — | — | US | disclosed |
| US-9618665-B2 | Colored composition, cured film, color filter, method for producing color filter, solid-state image sensor, and image display device | FUJIFILM CORPORATION (JP) | 2017-04-11 | — | — | US | disclosed |
| US-9618842-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-04-11 | — | — | US | disclosed |
| US-9618843-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-04-11 | — | — | US | disclosed |
| US-20170097565-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-04-06 | — | — | US | disclosed |
| US-20170097564-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID DIFFUSION CONTROL AGENT | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-04-06 | — | — | US | disclosed |
| US-9612535-B2 | Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-04-04 | — | — | US | disclosed |
| US-9612533-B2 | Salt and photoresist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-04-04 | — | — | US | disclosed |
| US-20170090287-A1 | OVERCOAT COMPOSITIONS AND METHODS FOR PHOTOLITHOGRAPHY | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2017-03-30 | — | — | US | disclosed |
| US-20170088743-A1 | RESIN COMPOSITION FOR UNDERLAYER FILM FORMATION, LAYERED PRODUCT, METHOD FOR FORMING PATTERN, AND PROCESS FOR PRODUCING DEVICE | FUJIFILM CORPORATION (JP) | 2017-03-30 | — | — | US | disclosed |
| US-20170090283-A1 | PHOTORESIST COMPOSITIONS AND METHODS | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2017-03-30 | — | — | US | disclosed |
| US-9606433-B2 | Resist composition, method of forming resist pattern, polymeric compound and compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-03-28 | — | — | US | disclosed |
| US-9601706-B2 | Resin composition for forming protective film, protective film, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-03-21 | — | — | US | disclosed |
| US-9599897-B2 | Salt, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-03-21 | — | — | US | disclosed |
| US-9599897-B2 | Salt, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-03-21 | — | — | US | disclosed |
| US-20170075222-A1 | PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-03-16 | — | — | US | disclosed |
| US-20170059995-A1 | PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-03-02 | — | — | US | disclosed |
| US-9581909-B2 | Method of trimming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-02-28 | — | — | US | disclosed |
| US-9581904-B2 | Photoresist overcoat compositions | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2017-02-28 | — | — | US | disclosed |
| US-9580402-B2 | Salt, acid generator, photoresist composition, and method for producing photoresist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-02-28 | — | — | US | disclosed |
| US-9575408-B2 | Photoresist composition and method for producing photoresist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-02-21 | — | — | US | disclosed |
| US-9568824-B2 | Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith | FUJIFILM CORPORATION (JP) | 2017-02-14 | — | — | US | disclosed |
| US-20170038685-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING COMPOSITION, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-02-09 | — | — | US | disclosed |
| US-9562122-B2 | Compound, resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-02-07 | — | — | US | disclosed |
| US-9562032-B2 | Salt and photoresist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-02-07 | — | — | US | disclosed |
| US-9563123-B2 | Photoresist composition, compound and process of producing photoresist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-02-07 | — | — | US | disclosed |
| US-9563125-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-02-07 | — | — | US | disclosed |
| US-9563121-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition | FUJIFILM CORPORATION (JP) | 2017-02-07 | — | — | US | disclosed |
| US-9557643-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device using the same and electronic device | FUJIFILM CORPORATION (JP) | 2017-01-31 | — | — | US | disclosed |
| US-20170022300-A1 | CONTINUOUS REACTION APPARATUS AND METHOD OF CONTINUOUS POLYMERIZATION USING THE SAME | HORIBA STEC, CO., LTD. (JP) | 2017-01-26 | — | — | US | disclosed |
| US-9551931-B2 | Method of forming pattern, actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, process for manufacturing electronic device and electronic device | FUJIFILM CORPORATION (JP) | 2017-01-24 | — | — | US | disclosed |
| US-9551931-B2 | Method of forming pattern, actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, process for manufacturing electronic device and electronic device | FUJIFILM CORPORATION (JP) | 2017-01-24 | — | — | US | disclosed |
| US-9551933-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, using the same, pattern forming method, manufacturing method of electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-01-24 | — | — | US | disclosed |
| US-9551928-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern therewith | FUJIFILM CORPORATION (JP) | 2017-01-24 | — | — | US | disclosed |
| US-9551935-B2 | Pattern forming method and resist composition | FUJIFILM CORPORATION (JP) | 2017-01-24 | — | — | US | disclosed |
| US-20170015710-A1 | CYCLIC PEPTIDE ANALOGS AND CONJUGATES THEREOF | SIRENAS LLC (US) | 2017-01-19 | — | — | US | disclosed |
| US-9547237-B2 | Colored photo-sensitive composition, color filter, and method for manufacturing color filter | FUJIFILM CORPORATION (JP) | 2017-01-17 | — | — | US | disclosed |
| US-9546133-B2 | Method for producing copolymer for semiconductor lithography containing reduced amount of metal impurities, and method for purifying polymerization initiator for production of copolymer | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2017-01-17 | — | — | US | disclosed |
| US-20170010535-A1 | RESIST OVERLAYER FILM FORMING COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE INCLUDING THE SAME | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-01-12 | — | — | US | disclosed |
| US-9541831-B2 | Positive resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2017-01-10 | — | — | US | disclosed |
| US-20160377978-A1 | RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-12-29 | — | — | US | disclosed |
| US-20160377980-A1 | RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-12-29 | — | — | US | disclosed |
| US-20160377979-A1 | RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-12-29 | — | — | US | disclosed |
| US-9527809-B2 | Compound, actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern formation method, and method for manufacturing electronic device using same, and electronic device | FUJIFILM CORPORATION (JP) | 2016-12-27 | — | — | US | disclosed |
| US-20160372662-A1 | ORGANIC THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME | FUJIFILM CORPORATION (JP) | 2016-12-22 | — | — | US | disclosed |
| US-20160370701-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2016-12-22 | — | — | US | disclosed |
| US-9523913-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-12-20 | — | — | US | disclosed |
| US-9523912-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device, electronic device and compound | FUJIFILM CORPORATION (JP) | 2016-12-20 | — | — | US | disclosed |
| US-9517635-B2 | Image forming method | FUJIFILM CORPORATION (JP) | 2016-12-13 | — | — | US | disclosed |
| US-9519218-B2 | Resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-12-13 | — | — | US | disclosed |
| US-9519214-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, pattern forming method, process for manufacturing electronic device and electronic device | FUJIFILM CORPORATION (JP) | 2016-12-13 | — | — | US | disclosed |
| US-9513544-B2 | — | — | 2016-12-06 | — | — | US | disclosed |
| US-9513547-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-12-06 | — | — | US | disclosed |
| US-20160349619-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2016-12-01 | — | — | US | disclosed |
| US-20160347897-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-12-01 | — | — | US | disclosed |
| US-20160349613-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-12-01 | — | — | US | disclosed |
| US-20160349620-A1 | METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD | FUJIFILM CORPORATION (JP) | 2016-12-01 | — | — | US | disclosed |
| US-9505953-B2 | Temporary adhesive for production of semiconductor device, and adhesive support and production method of semiconductor device using the same | FUJIFILM CORPORATION (JP) | 2016-11-29 | — | — | US | disclosed |
| US-20160342083-A1 | PATTERN FORMATION METHOD, ETCHING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-11-24 | — | — | US | disclosed |
| US-20160342083-A1 | PATTERN FORMATION METHOD, ETCHING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-11-24 | — | — | US | disclosed |
| US-20160339730-A1 | LITHOGRAPHIC PRINTING PLATE PRECURSOR, MANUFACTURING METHOD THEREFOR, PLATE MANUFACTURING METHOD FOR LITHOGRAPHIC PRINTING PLATE, AND PRINTING METHOD | FUJIFILM CORPORATION (JP) | 2016-11-24 | — | — | US | disclosed |
| US-9500951-B2 | Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-11-22 | — | — | US | disclosed |
| US-20160334702-A1 | SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-11-17 | — | — | US | disclosed |
| US-9494860-B2 | Resist composition, method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-11-15 | — | — | US | disclosed |
| US-9494866-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-11-15 | — | — | US | disclosed |
| US-20160327866-A1 | PATTERN FORMING METHOD, TREATING AGENT, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING THE SAME | FUJIFILM CORPORATION (JP) | 2016-11-10 | — | — | US | disclosed |
| US-9488911-B2 | Photosensitive composition, photocurable composition, chemical amplification resist composition, resist film, pattern forming method, method of manufacturing electronic device and electronic device | FUJIFILM CORPORATION (JP) | 2016-11-08 | — | — | US | disclosed |
| US-20160320703-A1 | OVERCOAT COMPOSITIONS AND METHODS FOR PHOTOLITHOGRAPHY | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2016-11-03 | — | — | US | disclosed |
| US-20160320705-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-11-03 | — | — | US | disclosed |
| US-20160320700-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-11-03 | — | — | US | disclosed |
| US-20160320702-A1 | PHOTORESIST COMPOSITIONS AND METHODS | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2016-11-03 | — | — | US | disclosed |
| US-9482947-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device | FUJIFILM CORPORATION (JP) | 2016-11-01 | — | — | US | disclosed |
| US-9480260-B2 | Acrylic polymers containing metallic nanoparticles | THE BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM (US) | 2016-11-01 | — | — | US | disclosed |
| US-9482958-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2016-11-01 | — | — | US | disclosed |
| US-9482945-B2 | Photoresist compositions and methods of forming photolithographic patterns | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2016-11-01 | — | — | US | disclosed |
| US-20160313645-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-10-27 | — | — | US | disclosed |
| US-20160306278-A1 | CHEMICAL FOR PHOTOLITHOGRAPHY WITH IMPROVED LIQUID TRANSFER PROPERTY AND RESIST COMPOSITION COMPRISING THE SAME | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-10-20 | — | — | US | disclosed |
| US-9470980-B2 | Pattern-forming method, electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition, resist film, manufacturing method of electronic device using them and electronic device | FUJIFILM CORPORATION (JP) | 2016-10-18 | — | — | US | disclosed |
| US-9465298-B2 | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method | FUJIFILM CORPORATION (JP) | 2016-10-11 | — | — | US | disclosed |
| US-9465292-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2016-10-11 | — | — | US | disclosed |
| US-20160291466-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-10-06 | — | — | US | disclosed |
| US-20160291467-A1 | RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-10-06 | — | — | US | disclosed |
| US-20160291461-A1 | PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, ELECTRONIC DEVICE, BLOCK COPOLYMER AND BLOCK COPOLYMER PRODUCTION METHOD | FUJIFILM CORPORATION (JP) | 2016-10-06 | — | — | US | disclosed |
| US-20160291464-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-10-06 | — | — | US | disclosed |
| US-20160291465-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-10-06 | — | — | US | disclosed |
| US-9459531-B2 | — | — | 2016-10-04 | — | — | US | disclosed |
| US-9459535-B2 | Method of forming pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-10-04 | — | — | US | disclosed |
| US-9458343-B2 | Method of forming patterns | FUJIFILM CORPORATION (JP) | 2016-10-04 | — | — | US | disclosed |
| US-20160279251-A1 | RANDOM COPOLYMER THERAPEUTIC AGENT CARRIERS AND ASSEMBLIES THEREOF | UNIVERSITY OF WASHINGTON THROUGH ITS CENTER FOR COMMERCIALIZATION (US) | 2016-09-29 | — | — | US | disclosed |
| US-20160284559-A1 | POLYMER FOR RESIST UNDER LAYER FILM COMPOSITION, RESIST UNDER LAYER FILM COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-09-29 | — | — | US | disclosed |
| US-9454079-B2 | Actinic ray- or radiation-sensitive resin composition, actinic ray- or radiation-sensitive film and method of forming pattern | FUJIFILM CORPORATION (JP) | 2016-09-27 | — | — | US | disclosed |
| US-9448477-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, manufacturing method of electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2016-09-20 | — | — | US | disclosed |
| US-9448478-B2 | Chemically amplified positive-type photosensitive resin composition for thick-film application | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-09-20 | — | — | US | disclosed |
| US-9448475-B2 | Photoresist composition, compound and process of producing photoresist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-09-20 | — | — | US | disclosed |
| US-9448482-B2 | Pattern forming method, resist pattern formed by the method, method for manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2016-09-20 | — | — | US | disclosed |
| US-20160266488-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-09-15 | — | — | US | disclosed |
| US-9441127-B2 | Polymerizable composition, ink composition for ink-jet recording, method of ink-jet recording, and printed article | FUJIFILM CORPORATION (JP) | 2016-09-13 | — | — | US | disclosed |
| US-20160257789-A1 | BLOCK COPOLYMER, METHOD OF PRODUCING BLOCK COPOLYMER, AND METHOD OF PRODUCING STRUCTURE CONTAINING PHASE-SEPARATED STRUCTURE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-09-08 | — | — | US | disclosed |
| US-20160255840-A1 | IMPROVING COLOR AND RELEASE PROFILE OF RESIN COMPOSITIONS COMPRISING SILVER NANOPARTICLES | THE BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM (US) | 2016-09-08 | — | — | US | disclosed |
| US-20160255839-A1 | IMPROVING SHELF LIFE AND COLOR PROFILE OF RESIN COMPOSITIONS WITH SILVER NANOPARTICLES | THE BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM (US) | 2016-09-08 | — | — | US | disclosed |
| US-20160259242-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-09-08 | — | — | US | disclosed |
| US-20160259242-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-09-08 | — | — | US | disclosed |
| EP-2413191-B1 | Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith | FUJIFILM CORP (JP) | 2016-09-07 | — | — | EP | disclosed |
| US-9429840-B2 | Pattern forming method, composition used therein, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-30 | — | — | US | disclosed |
| US-20160244400-A1 | COMPOUND, RESIN AND PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-08-25 | — | — | US | disclosed |
| US-9423689-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-23 | — | — | US | disclosed |
| US-9423690-B2 | Pattern forming method, electron beam-sensitive or extreme ultraviolet ray-sensitive resin composition, resist film, and method for manufacturing electronic device, and electronic device using the same | FUJIFILM CORPORATION (JP) | 2016-08-23 | — | — | US | disclosed |
| US-9423692-B2 | Composition for forming resist protection film for lithography and method for forming pattern of semiconductor device using the same | DONGJIN SEMICHEM CO., LTD. (KR) | 2016-08-23 | — | — | US | disclosed |
| US-9423692-B2 | Composition for forming resist protection film for lithography and method for forming pattern of semiconductor device using the same | DONGJIN SEMICHEM CO., LTD. (KR) | 2016-08-23 | — | — | US | disclosed |
| US-20160237190-A1 | COMPOUND, RESIN AND PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-08-18 | — | — | US | disclosed |
| US-20160238930-A1 | HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-18 | — | — | US | disclosed |
| US-20160238930-A1 | HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-18 | — | — | US | disclosed |
| US-20160240816-A1 | LAMINATE, KIT FOR MANUFACTURING ORGANIC SEMICONDUCTOR, AND RESIST COMPOSITION FOR MANUFACTURING ORGANIC SEMICONDUCTOR | FUJIFILM CORPORATION (JP) | 2016-08-18 | — | — | US | disclosed |
| US-9417528-B2 | Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-16 | — | — | US | disclosed |
| US-20160231651-A1 | CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION FOR THICK FILM | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-08-11 | — | — | US | disclosed |
| US-9411230-B2 | Pattern forming method, electron beam-sensitive or extreme ultraviolet-sensitive composition, resist film, method for manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-09 | — | — | US | disclosed |
| US-9411224-B2 | Method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-08-09 | — | — | US | disclosed |
| US-9411225-B2 | Photo acid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-09 | — | — | US | disclosed |
| US-9411225-B2 | Photo acid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-08-09 | — | — | US | disclosed |
| US-20160223905-A1 | ACTIVE LIGHTRAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2016-08-04 | — | — | US | disclosed |
| US-20160223905-A1 | ACTIVE LIGHTRAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2016-08-04 | — | — | US | disclosed |
| US-9405191-B2 | Resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-08-02 | — | — | US | disclosed |
| US-9405200-B2 | Resist composition and method of forming resist pattern | TOYKO OHKA KOGYO CO., LTD. (JP) | 2016-08-02 | — | — | US | disclosed |
| US-9405197-B2 | Pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-08-02 | — | — | US | disclosed |
| US-20160216604-A1 | COLORED COMPOSITION, CURED FILM, COLOR FILTER, METHOD FOR MANUFACTURING COLOR FILTER, SOLID-STATE IMAGING ELEMENT, IMAGE DISPLAY DEVICE, AND COMPOUND | FUJIFILM CORPORATION (JP) | 2016-07-28 | — | — | US | disclosed |
| US-20160209749-A1 | PATTERN FORMING METHOD, METHOD FOR FORMING PATTERNED MASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-07-21 | — | — | US | disclosed |
| US-20160209747-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2016-07-21 | — | — | US | disclosed |
| US-20160200702-A1 | SALT, ACID GENERATOR, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-07-14 | — | — | US | disclosed |
| US-20160195814-A1 | PATTERN FORMATION METHOD, ELECTRONIC-DEVICE PRODUCTION METHOD, AND PROCESSING AGENT | FUJIFILM CORPORATION (JP) | 2016-07-07 | — | — | US | disclosed |
| US-20160195809-A1 | PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-07-07 | — | — | US | disclosed |
| US-9383645-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, manufacturing method of electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-07-05 | — | — | US | disclosed |
| US-20160187780-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2016-06-30 | — | — | US | disclosed |
| US-9377685-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-06-28 | — | — | US | disclosed |
| US-20160170303-A1 | LAMINATE BODY | FUJIFILM CORPORATION (JP) | 2016-06-16 | — | — | US | disclosed |
| US-20160170298-A1 | SALT, ACID GENERATOR, PHOTORESIST COMPOSITION, AND METHOD FOR PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-06-16 | — | — | US | disclosed |
| US-20160170300-A1 | PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-06-16 | — | — | US | disclosed |
| US-20160168115-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-06-16 | — | — | US | disclosed |
| US-9366958-B2 | Photoacid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-14 | — | — | US | disclosed |
| US-9366958-B2 | Photoacid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-14 | — | — | US | disclosed |
| US-20160154304-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-06-02 | — | — | US | disclosed |
| US-20160154304-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-06-02 | — | — | US | disclosed |
| US-20160147156-A1 | PATTERN FORMATION METHOD, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-05-26 | — | — | US | disclosed |
| US-20160147146-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-05-26 | — | — | US | disclosed |
| US-20160146987-A1 | COLORED COMPOSITION, CURED FILM, COLOR FILTER, METHOD FOR PRODUCING COLOR FILTER, SOLID-STATE IMAGE SENSOR, AND IMAGE DISPLAY DEVICE | FUJIFILM CORPORATION (JP) | 2016-05-26 | — | — | US | disclosed |
| US-20160145186-A1 | NON-IONIC COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-05-26 | — | — | US | disclosed |
| US-20160147147-A1 | PATTERN FORMING METHOD, ACTINIC RAY SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-05-26 | — | — | US | disclosed |
| US-20160147157-A1 | PATTERN FORMATION METHOD, PATTERN, AND ETCHING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE USING SAME | FUJIFILM CORPORATION (JP) | 2016-05-26 | — | — | US | disclosed |
| US-20160147152-A1 | ADDITIVE FOR RESIST UNDERLAYER FILM-FORMING COMPOSITION AND RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING THE SAME | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2016-05-26 | — | — | US | disclosed |
| US-20160145205-A1 | SALT, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-05-26 | — | — | US | disclosed |
| US-20160147155-A1 | PATTERN FORMATION METHOD, ACTIVE LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PRODUCTION METHOD FOR ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-05-26 | — | — | US | disclosed |
| US-20160147154-A1 | PATTERN FORMATION METHOD, ACTIVE LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PRODUCTION METHOD FOR ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-05-26 | — | — | US | disclosed |
| US-9348221-B2 | Salt and photoresist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-05-24 | — | — | US | disclosed |
| US-20160139508-A1 | COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-05-19 | — | — | US | disclosed |
| US-9341947-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-05-17 | — | — | US | disclosed |
| US-20160131976-A1 | RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-05-12 | — | — | US | disclosed |
| US-20160130212-A1 | COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-05-12 | — | — | US | disclosed |
| US-20160130210-A1 | COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-05-12 | — | — | US | disclosed |
| US-20160131975-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-05-12 | — | — | US | disclosed |
| US-20160131972-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-12 | — | — | US | disclosed |
| US-20160131971-A1 | COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-05-12 | — | — | US | disclosed |
| US-20160131972-A1 | NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-12 | — | — | US | disclosed |
| US-20160122574-A1 | PHOTORESIST OVERCOAT COMPOSITIONS | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2016-05-05 | — | — | US | disclosed |
| US-20160124313-A1 | PATTERN FORMING PROCESS AND SHRINK AGENT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-05-05 | — | — | US | disclosed |
| US-20160124309-A1 | PATTERN FORMATION METHODS | ROHM & HAAS ELECT MAT (US) | 2016-05-05 | — | — | US | disclosed |
| US-20160122577-A1 | HARD COAT FILM, POLARIZING PLATE, AND TOUCH PANEL DISPLAY | FUJIFILM CORPORATION (JP) | 2016-05-05 | — | — | US | disclosed |
| US-20160116840-A1 | COMPOUND, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM USING SAME, RESIST-COATED MASK BLANK, PHOTOMASK, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-04-28 | — | — | US | disclosed |
| US-9323150-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern | FUJIFILM CORPORATION (JP) | 2016-04-26 | — | — | US | disclosed |
| US-9323153-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the same | FUJIFILM CORPORATION (JP) | 2016-04-26 | — | — | US | disclosed |
| US-9316911-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2016-04-19 | — | — | US | disclosed |
| US-9316912-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2016-04-19 | — | — | US | disclosed |
| US-9316908-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, photomask blank and method of forming pattern | FUJIFILM CORPORATION (JP) | 2016-04-19 | — | — | US | disclosed |
| US-9316910-B2 | Pattern forming method, actinic-ray-sensitive or radiation-sensitive resin composition, and resist film | FUJIFILM CORPORATION (JP) | 2016-04-19 | — | — | US | disclosed |
| US-20160103393-A1 | PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2016-04-14 | — | — | US | disclosed |
| US-20160103395-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2016-04-14 | — | — | US | disclosed |
| US-20160097979-A1 | METHOD OF TRIMMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-04-07 | — | — | US | disclosed |
| US-20160097978-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-04-07 | — | — | US | disclosed |
| US-9304393-B2 | Radiation-sensitive resin composition and compound | JSR CORPORATION (JP) | 2016-04-05 | — | — | US | disclosed |
| US-20160090494-A1 | POLYMERIZABLE COMPOSITION, INK COMPOSITION FOR INK-JET RECORDING, METHOD OF INK-JET RECORDING, AND PRINTED ARTICLE | FUJIFILM CORPORATION (JP) | 2016-03-31 | — | — | US | disclosed |
| US-20160083341-A1 | METHOD FOR PRODUCING a-SUBSTITUTED CYSTEINE OR SALT THEREOF OR SYNTHETIC INTERMEDIATE OF a-SUBSTITUTED CYSTEINE | API CORPORATION (JP) | 2016-03-24 | — | — | US | disclosed |
| US-9291904-B2 | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method | FUJIFILM CORPORATION (JP) | 2016-03-22 | — | — | US | disclosed |
| US-9291897-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2016-03-22 | — | — | US | disclosed |
| US-9291896-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, pattern forming method, manufacturing method of electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-03-22 | — | — | US | disclosed |
| US-9291892-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and, resist film, pattern forming method, electronic device manufacturing method, and electronic device, each using the composition | FUJIFILM CORPORATION (JP) | 2016-03-22 | — | — | US | disclosed |
| US-20160077431-A1 | RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-03-17 | — | — | US | disclosed |
| US-20160075806-A1 | RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-03-17 | — | — | US | disclosed |
| US-20160077430-A1 | RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-03-17 | — | — | US | disclosed |
| US-20160077432-A1 | RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-03-17 | — | — | US | disclosed |
| US-20160077440-A1 | PATTERN PEELING METHOD, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME | FUJIFILM CORPORATION (JP) | 2016-03-17 | — | — | US | disclosed |
| US-20160077429-A1 | RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-03-17 | — | — | US | disclosed |
| US-20160077433-A1 | RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-03-17 | — | — | US | disclosed |
| US-9285679-B2 | Actinic ray-sensitive or radiation-sensitive composition, and resist film, resist-coated mask blanks, resist pattern forming method and photomask each using the composition | FUJIFILM CORPORATION (JP) | 2016-03-15 | — | — | US | disclosed |
| US-20160070174-A1 | PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-03-10 | — | — | US | disclosed |
| US-20160070167-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND COMPOUND | FUJIFILM CORPORATION (JP) | 2016-03-10 | — | — | US | disclosed |
| US-20160062236-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-03-03 | — | — | US | disclosed |
| US-20160062233-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-03-03 | — | — | US | disclosed |
| US-20160062234-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-03-03 | — | — | US | disclosed |
| US-9274421-B2 | Salt and photoresist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-03-01 | — | — | US | disclosed |
| US-9274421-B2 | Salt and photoresist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-03-01 | — | — | US | disclosed |
| US-9274424-B2 | Resist composition and resist pattern forming method | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-03-01 | — | — | US | disclosed |
| US-20160052859-A1 | COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-02-25 | — | — | US | disclosed |
| US-20160053032-A1 | COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-02-25 | — | — | US | disclosed |
| US-20160052877-A1 | SALT, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-02-25 | — | — | US | disclosed |
| US-20160048075-A1 | PATTERN FORMING METHOD, COMPOSITION KIT AND RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THESE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-02-18 | — | — | US | disclosed |
| US-20160041465-A1 | PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-02-11 | — | — | US | disclosed |
| US-9256127-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-02-09 | — | — | US | disclosed |
| US-20160033870-A1 | PATTERN FORMATION METHOD, ELECTRONIC-DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-02-04 | — | — | US | disclosed |
| US-20160033862-A1 | ACTIVE LIGHT-SENSITIVE, OR RADIATION-SENSITIVE RESIN COMPOSITION, AND PATTERN-FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2016-02-04 | — | — | US | disclosed |
| US-9250532-B2 | Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-02-02 | — | — | US | disclosed |
| US-9250532-B2 | Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-02-02 | — | — | US | disclosed |
| US-9250530-B2 | — | — | 2016-02-02 | — | — | US | disclosed |
| US-9250531-B2 | Method of forming resist pattern and negative tone-development resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-02-02 | — | — | US | disclosed |
| US-9250519-B2 | Pattern forming method and actinic ray-sensitive or radiation-sensitive resin composition for use in the method | FUJIFILM CORPORATION (JP) | 2016-02-02 | — | — | US | disclosed |
| US-20160024005-A1 | COMPOUND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-01-28 | — | — | US | disclosed |
| US-20160023992-A1 | METHOD FOR PRODUCING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY CONTAINING REDUCED AMOUNT OF METAL IMPURITIES, AND METHOD FOR PURIFYING POLYMERIZATION INITIATOR FOR PRODUCTION OF COPOLYMER | MARUZEN PETROCHEMICAL CO., LTD. | 2016-01-28 | — | — | US | disclosed |
| US-20160026088-A1 | METHOD FOR MANUFACTURING ORGANIC PROCESSING FLUID FOR PATTERNING OF CHEMICAL AMPLIFICATION TYPE RESIST FILM, ORGANIC PROCESSING FLUID FOR PATTERNING OF CHEMICAL AMPLIFICATION TYPE RESIST FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-01-28 | — | — | US | disclosed |
| US-20160026083-A1 | PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-01-28 | — | — | US | disclosed |
| US-9244357-B2 | Method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-01-26 | — | — | US | disclosed |
| US-9244344-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and, resist film, pattern forming method, electronic device manufacturing method, and electronic device, each using the same | FUJIFILM CORPORATION (JP) | 2016-01-26 | — | — | US | disclosed |
| US-20160018732-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, RESIST-COATED MASK BLANK, PHOTOMASK AND PATTERN FORMING METHOD, AND METHOD FOR PRODUCING ELECTRONIC DEVICE USING THEM, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-01-21 | — | — | US | disclosed |
| US-20160018734-A1 | PATTERN FORMING METHOD, COMPOSITION KIT AND RESIST FILM, AND METHOD FOR PRODUCING ELECTRONIC DEVICE USING THEM, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-01-21 | — | — | US | disclosed |
| US-20160011517-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD OF MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-01-14 | — | — | US | disclosed |
| US-20160009936-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2016-01-14 | — | — | US | disclosed |
| US-9235123-B2 | Resist composition and resist pattern forming method | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-01-12 | — | — | US | disclosed |
| US-9235122-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-12 | — | — | US | disclosed |
| US-9235122-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-12 | — | — | US | disclosed |
| US-9233919-B2 | Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-12 | — | — | US | disclosed |
| US-9235117-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-01-12 | — | — | US | disclosed |
| US-9233919-B2 | Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-12 | — | — | US | disclosed |
| US-20160004156-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT USED THEREFOR AND METHOD OF MANUFACTURING THE SAME, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-01-07 | — | — | US | disclosed |
| US-20160004157-A1 | METHOD OF FORMING PATTERN, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, PROCESS FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-01-07 | — | — | US | disclosed |
| US-20160004157-A1 | METHOD OF FORMING PATTERN, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, PROCESS FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-01-07 | — | — | US | disclosed |
| US-20160004155-A1 | PHOTO ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-07 | — | — | US | disclosed |
| US-20160004159-A1 | COMPOSITION FOR FORMING RESIST PROTECTION FILM FOR LITHOGRAPHY AND METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE USING THE SAME | DONGJIN SEMICHEM CO., LTD. (KR) | 2016-01-07 | — | — | US | disclosed |
| US-20160004159-A1 | COMPOSITION FOR FORMING RESIST PROTECTION FILM FOR LITHOGRAPHY AND METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE USING THE SAME | DONGJIN SEMICHEM CO., LTD. (KR) | 2016-01-07 | — | — | US | disclosed |
| US-20160004155-A1 | PHOTO ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-07 | — | — | US | disclosed |
| US-9229321-B2 | Salt and photoresist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-01-05 | — | — | US | disclosed |
| US-20150378257-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-12-31 | — | — | US | disclosed |
| US-20150376440-A1 | INKJET RECORDING METHOD, PRINTED MATERIAL, AND INK SET | FUJIFILM CORPORATION (JP) | 2015-12-31 | — | — | US | disclosed |
| US-9223219-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film | FUJIFILM CORPORATION (JP) | 2015-12-29 | — | — | US | disclosed |
| US-9223205-B2 | Acid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-29 | — | — | US | disclosed |
| US-9223205-B2 | Acid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-29 | — | — | US | disclosed |
| US-9223208-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-12-29 | — | — | US | disclosed |
| US-9223204-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern-forming method using the same | FUJITSU CORPORATION (JP) | 2015-12-29 | — | — | US | disclosed |
| US-9221742-B2 | Sulfonium salt, chemically amplified resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-29 | — | — | US | disclosed |
| US-9221742-B2 | Sulfonium salt, chemically amplified resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-29 | — | — | US | disclosed |
| US-20150370170-A1 | PATTERN FORMING METHOD, ELECTRON BEAM- OR EXTREME ULTRAVIOLET-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-12-24 | — | — | US | disclosed |
| US-9216948-B2 | Method for producing copolymer for semiconductor lithography containing reduced amount of metal impurities, and method for purifying polymerization initiator for production of copolymer | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2015-12-22 | — | — | US | disclosed |
| US-9217919-B2 | Photosensitive composition, pattern-forming method using the composition, and resin used in the composition | FUJIFILM CORPORATION (JP) | 2015-12-22 | — | — | US | disclosed |
| US-20150362836-A1 | PHOTOSENSITIVE COMPOSITION, PHOTOCURABLE COMPOSITION, CHEMICAL AMPLIFICATION RESIST COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, METHOD OF MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-12-17 | — | — | US | disclosed |
| US-9213237-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2015-12-15 | — | — | US | disclosed |
| US-20150355541-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2015-12-10 | — | — | US | disclosed |
| US-9201303-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-12-01 | — | — | US | disclosed |
| US-20150338732-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, PROCESS FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-11-26 | — | — | US | disclosed |
| US-20150338743-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-11-26 | — | — | US | disclosed |
| US-20150338736-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2015-11-26 | — | — | US | disclosed |
| US-20150338735-A1 | SALT, ACID GENERATOR, PHOTORESIST COMPOSITION AND PROCESS OF PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-11-26 | — | — | US | disclosed |
| US-20150338733-A1 | COLORED PHOTO-SENSITIVE COMPOSITION, COLOR FILTER, AND METHOD FOR MANUFACTURING COLOR FILTER | FUJIFILM CORPORATION (JP) | 2015-11-26 | — | — | US | disclosed |
| US-20150331314-A1 | PATTERN FORMING METHOD, COMPOUND USED THEREIN, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-11-19 | — | — | US | disclosed |
| US-9188865-B2 | Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2015-11-17 | — | — | US | disclosed |
| US-9188863-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-11-17 | — | — | US | disclosed |
| US-9188862-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the same | FUJIFILM CORPORATION (JP) | 2015-11-17 | — | — | US | disclosed |
| US-20150323865-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-11-12 | — | — | US | disclosed |
| US-20150323865-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-11-12 | — | — | US | disclosed |
| US-9182663-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-11-10 | — | — | US | disclosed |
| US-9176386-B2 | Method of forming patterns | FUJIFILM CORPORATION (JP) | 2015-11-03 | — | — | US | disclosed |
| US-9170487-B2 | Resist composition, method of forming resist pattern, and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-10-27 | — | — | US | disclosed |
| US-9170489-B2 | Pattern-forming method, electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition, resist film, manufacturing method of electronic device using them and electronic device | FUJIFILM CORPORATION (JP) | 2015-10-27 | — | — | US | disclosed |
| US-20150301449-A1 | PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-10-22 | — | — | US | disclosed |
| US-20150301449-A1 | PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-10-22 | — | — | US | disclosed |
| US-9162967-B2 | Sulfonium salt, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-10-20 | — | — | US | disclosed |
| US-9162967-B2 | Sulfonium salt, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-10-20 | — | — | US | disclosed |
| US-9164381-B2 | Resist composition, method of forming resist pattern, and compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-10-20 | — | — | US | disclosed |
| US-9164380-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-10-20 | — | — | US | disclosed |
| US-9164384-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-10-20 | — | — | US | disclosed |
| US-9164384-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-10-20 | — | — | US | disclosed |
| US-20150293446-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-10-15 | — | — | US | disclosed |
| US-20150293454-A1 | METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD | FUJIFILM CORPORATION (JP) | 2015-10-15 | — | — | US | disclosed |
| US-9158198-B2 | Photoresist compositions and methods of forming photolithographic patterns | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2015-10-13 | — | — | US | disclosed |
| US-20150286137-A1 | PHOTORESIST COMPOSITION AND PROCESS OF PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-10-08 | — | — | US | disclosed |
| US-20150286137-A1 | PHOTORESIST COMPOSITION AND PROCESS OF PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-10-08 | — | — | US | disclosed |
| US-20150284492-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-10-08 | — | — | US | disclosed |
| EP-2927749-A1 | ORGANIC TREATMENT SOLUTION FOR PATTERNING OF CHEMICALLY AMPLIFIED RESIST FILM, CONTAINER FOR ORGANIC TREATMENT SOLUTION FOR PATTERNING OF CHEMICALLY AMPLIFIED RESIST FILM, AND PATTERN FORMATION METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE USING SAME | FUJIFILM Corporation (JP) | 2015-10-07 | — | — | EP | disclosed |
| US-9152047-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray-or radiation-sensitive film therefrom, method of forming pattern, process for manufacturing semiconductor device, semiconductor device and compound | FUJIFILM CORPORATION (JP) | 2015-10-06 | — | — | US | disclosed |
| US-9152049-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-10-06 | — | — | US | disclosed |
| US-9152048-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-10-06 | — | — | US | disclosed |
| US-20150277225-A1 | ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM FORMED USING SAID COMPOSITION, METHOD FOR FORMING PATTERN USING SAID COMPOSITION, PROCESS FOR PRODUCING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-10-01 | — | — | US | disclosed |
| US-9146464-B2 | Sulfonium salt, polymer, polymer making method, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-09-29 | — | — | US | disclosed |
| US-20150268557-A1 | CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION FOR THICK-FILM APPLICATION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-09-24 | — | — | US | disclosed |
| US-9140981-B2 | Actinic-ray-sensitive or radiation-sensitive resin composition, and resist film using the same, pattern forming method, electronic device manufacturing method, and electronic device, each using the same | FUJIFILM CORPORATION (JP) | 2015-09-22 | — | — | US | disclosed |
| US-9140983-B2 | Resist composition and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-09-22 | — | — | US | disclosed |
| US-9133357-B2 | White ink composition, ink set for forming multiple layers, image forming method and printed matter | FUJIFILM CORPORATION (JP) | 2015-09-15 | — | — | US | disclosed |
| US-9134617-B2 | Solvent developable negative resist composition, resist pattern formation method, and method for forming pattern of layer including block copolymer | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-09-15 | — | — | US | disclosed |
| US-9133102-B2 | Resist composition, method of forming resist pattern and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-09-15 | — | — | US | disclosed |
| US-20150253662-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-09-10 | — | — | US | disclosed |
| US-20150253673-A1 | PATTERN FORMING METHOD, RESIST PATTERN FORMED BY THE METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-09-10 | — | — | US | disclosed |
| US-9128374-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-09-08 | — | — | US | disclosed |
| US-9128376-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2015-09-08 | — | — | US | disclosed |
| US-20150248052-A1 | PHOTORESIST COMPOSITION, COMPOUND AND PROCESS OF PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-09-03 | — | — | US | disclosed |
| US-20150248054-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-09-03 | — | — | US | disclosed |
| US-20150248056-A1 | PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, RESIST COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-09-03 | — | — | US | disclosed |
| US-9122155-B2 | Sulfonium salt, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-09-01 | — | — | US | disclosed |
| US-9122157-B2 | Resist composition and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-09-01 | — | — | US | disclosed |
| US-9122151-B2 | Resist composition, resist film therefrom and method of forming negative pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-09-01 | — | — | US | disclosed |
| US-9122155-B2 | Sulfonium salt, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-09-01 | — | — | US | disclosed |
| US-9120288-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for preparing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2015-09-01 | — | — | US | disclosed |
| US-20150241769-A1 | PHOTORESIST COMPOSITION, COMPOUND AND PROCESS OF PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-08-27 | — | — | US | disclosed |
| US-9116437-B2 | Pattern forming method, chemical amplification resist composition and resist film | FUJIFILM CORPORATION (JP) | 2015-08-25 | — | — | US | disclosed |
| US-9115074-B2 | Fluorinated monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-08-25 | — | — | US | disclosed |
| US-9115074-B2 | Fluorinated monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-08-25 | — | — | US | disclosed |
| US-9109127-B2 | Ink composition, image forming method, and printed article using the same | FUJIFILM CORPORATION (JP) | 2015-08-18 | — | — | US | disclosed |
| US-20150227049-A1 | ORGANIC PROCESSING LIQUID FOR PATTERNING CHEMICAL AMPLIFICATION RESIST FILM, CONTAINER FOR ORGANIC PROCESSING LIQUID FOR PATTERNING CHEMICAL AMPLIFICATION RESIST FILM, AND PATTERN FORMING METHOD, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE USING THE SAME | FUJIFILM CORPORATION (JP) | 2015-08-13 | — | — | US | disclosed |
| CN-104837818-A | Pyridine-2-amides useful as CB2 agonists | HOFFMANN LA ROCHE | 2015-08-12 | — | — | CN | disclosed |
| US-9104101-B2 | Resist composition, method of forming resist pattern and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-08-11 | — | — | US | disclosed |
| US-9104110-B2 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-08-11 | — | — | US | disclosed |
| US-9104110-B2 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-08-11 | — | — | US | disclosed |
| US-20150221881-A1 | RESIN COMPOSITION FOR FORMING PROTECTIVE FILM, PROTECTIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-08-06 | — | — | US | disclosed |
| US-9096645-B2 | Dipeptide analogs for treating conditions associated with amyloid fibril formation | RAMOT AT TEL-AVIV UNIVERSITY LTD. (IL) | 2015-08-04 | — | — | US | disclosed |
| US-9097973-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2015-08-04 | — | — | US | disclosed |
| US-9097969-B2 | Compound, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-08-04 | — | — | US | disclosed |
| US-9097971-B2 | Compound, radical polymerization initiator, method for producing compound, polymer, resist composition, and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-08-04 | — | — | US | disclosed |
| US-20150212408-A1 | SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-07-30 | — | — | US | disclosed |
| US-20150212407-A1 | SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-07-30 | — | — | US | disclosed |
| US-9090722-B2 | Chemical amplification resist composition, and mold preparation method and resist film using the same | FUJIFILM CORPORATION (JP) | 2015-07-28 | — | — | US | disclosed |
| US-9091927-B2 | Positive resist composition, and resist film, resist-coated mask blank, resist pattern forming method and photomask each using the composition | FUJIFILM CORPORATION (JP) | 2015-07-28 | — | — | US | disclosed |
| US-9091918-B2 | Sulfonium salt, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-28 | — | — | US | disclosed |
| US-9091918-B2 | Sulfonium salt, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-28 | — | — | US | disclosed |
| US-20150205205-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORP (JP) | 2015-07-23 | — | — | US | disclosed |
| US-9086627-B2 | Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, manufacturing method of electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2015-07-21 | — | — | US | disclosed |
| US-9086623-B2 | Method of forming pattern, actinic-ray- or radiation-sensitive resin composition and actinic-ray- or radiation-sensitive film | FUJIFILM CORPORATION (JP) | 2015-07-21 | — | — | US | disclosed |
| US-9086627-B2 | Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, manufacturing method of electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2015-07-21 | — | — | US | disclosed |
| US-9081279-B2 | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2015-07-14 | — | — | US | disclosed |
| US-9081277-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-07-14 | — | — | US | disclosed |
| US-9081286-B2 | Pattern forming method, method for producing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2015-07-14 | — | — | US | disclosed |
| US-20150192852-A1 | LITHOGRAPHIC PRINTING PLATE PRECURSOR AND PLATE MAKING METHOD | FUJIFILM CORPORATION (JP) | 2015-07-09 | — | — | US | disclosed |
| US-9075304-B2 | Method of producing ammonium salt compound, method of producing compound, and compound, polymeric compound, acid generator, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-07-07 | — | — | US | disclosed |
| US-9075310-B2 | Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2015-07-07 | — | — | US | disclosed |
| US-20150185610-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-07-02 | — | — | US | disclosed |
| US-20150185609-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME | FUJIFILM CORPORATION (JP) | 2015-07-02 | — | — | US | disclosed |
| US-20150185612-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-07-02 | — | — | US | disclosed |
| US-20150184032-A1 | TEMPORARY ADHESIVE FOR PRODUCTION OF SEMICONDUCTOR DEVICE, AND ADHESIVE SUPPORT AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE USING THE SAME | FUJIFILM CORPORATION (JP) | 2015-07-02 | — | — | US | disclosed |
| US-20150184033-A1 | TEMPORARY ADHESIVE FOR PRODUCTION OF SEMICONDUCTOR DEVICE, AND ADHESIVE SUPPORT AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE USING THE SAME | FUJIFILM CORPORATION (JP) | 2015-07-02 | — | — | US | disclosed |
| US-9069246-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method and resist film using the composition, and electronic device manufacturing method and electronic device using these | FUJIFILM CORPORATION (JP) | 2015-06-30 | — | — | US | disclosed |
| US-9063416-B2 | Resist composition, method of forming resist pattern and compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-06-23 | — | — | US | disclosed |
| US-20150168828-A1 | SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-06-18 | — | — | US | disclosed |
| US-20150168838-A1 | POSITIVE RESIST COMPOSITION, RESIN USED FOR THE POSITIVE RESIST COMPOSITION, COMPOUND USED FOR SYNTHESIS OF THE RESIN AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2015-06-18 | — | — | US | disclosed |
| US-20150168834-A1 | PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RAY-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE USING THE SAME | FUJIFILM CORPORATION (JP) | 2015-06-18 | — | — | US | disclosed |
| US-20150168830-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE, AND COMPOUND | FUJIFILM CORPORATION (JP) | 2015-06-18 | — | — | US | disclosed |
| US-20150166819-A1 | IMAGE FORMING METHOD | FUJIFILM CORPORATION (JP) | 2015-06-18 | — | — | US | disclosed |
| US-9057948-B2 | Resist composition for EUV or EB, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-06-16 | — | — | US | disclosed |
| US-9057949-B2 | Patterning process, resist composition, polymer, and polymerizable ester compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-06-16 | — | — | US | disclosed |
| US-9057952-B2 | Positive resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2015-06-16 | — | — | US | disclosed |
| US-9057949-B2 | Patterning process, resist composition, polymer, and polymerizable ester compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-06-16 | — | — | US | disclosed |
| US-20150160559-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-06-11 | — | — | US | disclosed |
| US-20150160555-A1 | PATTERN FORMING METHOD, AND, METHOD FOR PRODUCING ELECTRONIC DEVICE AND ELECTRONIC DEVICE, EACH USING THE SAME | FUJIFILM CORPORATION (JP) | 2015-06-11 | — | — | US | disclosed |
| US-20150160556-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2015-06-11 | — | — | US | disclosed |
| US-9051403-B2 | Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2015-06-09 | — | — | US | disclosed |
| US-9052594-B2 | Positive photosensitive composition and method of forming pattern using the same | FUJIFILM CORPORATION (JP) | 2015-06-09 | — | — | US | disclosed |
| US-9052592-B2 | Resist composition and resist pattern forming method | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-06-09 | — | — | US | disclosed |
| US-9052590-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-06-09 | — | — | US | disclosed |
| US-9046773-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method using the same, polymerizable compound and polymer compound obtained by polymerizing the polymerizable compound | FUJIFILM CORPORATION (JP) | 2015-06-02 | — | — | US | disclosed |
| US-9046766-B2 | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using same | FUJIFILM CORPORATION (JP) | 2015-06-02 | — | — | US | disclosed |
| US-9046772-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-06-02 | — | — | US | disclosed |
| US-9046765-B2 | Resist pattern-forming method, resist pattern-forming radiation-sensitive resin composition, and resist film | JSR CORPORATION (JP) | 2015-06-02 | — | — | US | disclosed |
| US-9046772-B2 | Monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-06-02 | — | — | US | disclosed |
| US-9046782-B2 | Resist composition for negative tone development and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2015-06-02 | — | — | US | disclosed |
| US-20150147699-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-05-28 | — | — | US | disclosed |
| US-20150147702-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO LTD (JP) | 2015-05-28 | — | — | US | disclosed |
| US-20150147688-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-05-28 | — | — | US | disclosed |
| US-9040231-B2 | — | — | 2015-05-26 | — | — | US | disclosed |
| US-9040231-B2 | — | — | 2015-05-26 | — | — | US | disclosed |
| US-9040222-B2 | Polymerizable tertiary ester compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-05-26 | — | — | US | disclosed |
| US-9040222-B2 | Polymerizable tertiary ester compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-05-26 | — | — | US | disclosed |
| US-9040220-B2 | Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-05-26 | — | — | US | disclosed |
| US-20150140484-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-05-21 | — | — | US | disclosed |
| US-20150140482-A1 | PATTERN FORMING METHOD, AND, ELECTRONIC DEVICE PRODUCING METHOD AND ELECTRONIC DEVICE, EACH USING THE SAME | FUJIFILM CORPORATION (JP) | 2015-05-21 | — | — | US | disclosed |
| US-9034558-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film and method of forming pattern | FUJIFILM CORPORATION (JP) | 2015-05-19 | — | — | US | disclosed |
| US-9034556-B2 | Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-05-19 | — | — | US | disclosed |
| US-9034557-B2 | Chemically amplified positive photoresist composition | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) | 2015-05-19 | — | — | US | disclosed |
| US-20150132687-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-05-14 | — | — | US | disclosed |
| US-20150132688-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND RESIN | FUJIFILM CORPORATION (JP) | 2015-05-14 | — | — | US | disclosed |
| US-9029070-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD (JP) | 2015-05-12 | — | — | US | disclosed |
| US-9023581-B2 | Resist composition, method of forming resist pattern, polymeric compound, and compound | TOKYO OHKA KOGYO CO., LTD (JP) | 2015-05-05 | — | — | US | disclosed |
| US-9023579-B2 | Actinic-ray- or radiation-sensitive resin composition, compound and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-05-05 | — | — | US | disclosed |
| US-9023577-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD (JP) | 2015-05-05 | — | — | US | disclosed |
| US-20150118620-A1 | SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-04-30 | — | — | US | disclosed |
| US-20150118620-A1 | SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-04-30 | — | — | US | disclosed |
| US-20150118621-A1 | METHOD OF FORMING PATTERN AND ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION FOR USE IN THE METHOD | FUJIFILM CORPORATION (JP) | 2015-04-30 | — | — | US | disclosed |
| US-20150118623-A1 | RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2015-04-30 | — | — | US | disclosed |
| US-20150118451-A1 | INK COMPOSITION, IMAGE FORMING METHOD, PRINTED MATERIAL, AND GRAFT COPOLYMER | FUJIFILM CORPORATION (JP) | 2015-04-30 | — | — | US | disclosed |
| US-20150118451-A1 | INK COMPOSITION, IMAGE FORMING METHOD, PRINTED MATERIAL, AND GRAFT COPOLYMER | FUJIFILM CORPORATION (JP) | 2015-04-30 | — | — | US | disclosed |
| US-20150118628-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM, METHOD OF FORMING PATTERN, PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJIFILM CORPORATION (JP) | 2015-04-30 | — | — | US | disclosed |
| US-20150118627-A1 | PATTERN FORMING METHOD, COMPOSITION USED TEHREIN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-04-30 | — | — | US | disclosed |
| US-20150118619-A1 | SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-04-30 | — | — | US | disclosed |
| US-9017917-B2 | Resist composition and method of forming pattern therewith | FUJIFILM CORPORATION (JP) | 2015-04-28 | — | — | US | disclosed |
| US-9017919-B2 | Resist composition, method of forming resist pattern, novel compound and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-04-28 | — | — | US | disclosed |
| US-20150111135-A1 | PATTERN FORMING METHOD AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION FOR USE IN THE METHOD | FUJIFILM CORPORATION (JP) | 2015-04-23 | — | — | US | disclosed |
| US-20150111155-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO LTD (JP) | 2015-04-23 | — | — | US | disclosed |
| US-20150111157-A1 | METHOD OF FORMING PATTERN AND ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION FOR USE IN THE METHOD | FUJIFILM CORPORATION (JP) | 2015-04-23 | — | — | US | disclosed |
| US-20150111154-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-04-23 | — | — | US | disclosed |
| US-9012129-B2 | Resist composition, method of forming resist pattern, novel compound, and acid generator | TOKYO OHKA KOGYO CO., LTD. (JO) | 2015-04-21 | — | — | US | disclosed |
| US-9012123-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2015-04-21 | — | — | US | disclosed |
| US-9012125-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-04-21 | — | — | US | disclosed |
| US-20150104746-A1 | METHOD OF CONCENTRATING WASTE LIQUID PRODUCED BY DEVELOPMENT, AND METHOD OF RECYCLING WASTE LIQUID PRODUCED BY DEVELOPMENT | FUJIFILM CORPORATION (JP) | 2015-04-16 | — | — | US | disclosed |
| US-9005874-B2 | Compound, polymeric compound, acid generator, resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-04-14 | — | — | US | disclosed |
| US-9005870-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-04-14 | — | — | US | disclosed |
| US-9005872-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-04-14 | — | — | US | disclosed |
| US-20150098046-A1 | POLARIZING PLATE PROTECTIVE FILM, POLARIZING PLATE, LIQUID CRYSTAL DISPLAY DEVICE, AND PRODUCTION METHOD OF POLARIZING PLATE PROTECTIVE FILM | FUJIFILM CORPORATION (JP) | 2015-04-09 | — | — | US | disclosed |
| US-8999622-B2 | Pattern forming method, chemical amplification resist composition and resist film | FUJIFILM CORPORATION (JP) | 2015-04-07 | — | — | US | disclosed |
| US-8999621-B2 | Pattern forming method, chemical amplification resist composition and resist film | FUJIFILM CORPORATION (JP) | 2015-04-07 | — | — | US | disclosed |
| US-8999631-B2 | Primer and pattern forming method for layer including block copolymer | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-04-07 | — | — | US | disclosed |
| US-20150093691-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2015-04-02 | — | — | US | disclosed |
| US-20150093692-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM USED THEREFOR, AND ELECTRONIC DEVICE MANUFACTURING METHOD AND ELECTRONIC DEVICE USING THE SAMEDEVICE MANUFACTURING METHOD AND ELECTRONIC DEVICE USING THE SAME | FUJIFILM CORPORATION (JP) | 2015-04-02 | — | — | US | disclosed |
| US-8993223-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2015-03-31 | — | — | US | disclosed |
| US-8993211-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2015-03-31 | — | — | US | disclosed |
| US-20150086912-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD USING THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJIFILM CORPORATION (JP) | 2015-03-26 | — | — | US | disclosed |
| US-20150086927-A1 | PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-03-26 | — | — | US | disclosed |
| US-20150086926-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-26 | — | — | US | disclosed |
| US-20150086926-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-26 | — | — | US | disclosed |
| US-20150086911-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANKS INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD AND PHOTOMASK | FUJIFILM CORPORATION (JP) | 2015-03-26 | — | — | US | disclosed |
| US-8986919-B2 | Resist composition, method of forming resist pattern and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-03-24 | — | — | US | disclosed |
| US-8987386-B2 | Method of producing polymeric compound, resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-03-24 | — | — | US | disclosed |
| US-20150079522-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2015-03-19 | — | — | US | disclosed |
| US-20150079508-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-03-19 | — | — | US | disclosed |
| US-8980527-B2 | Pattern forming process and resist compostion | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-17 | — | — | US | disclosed |
| US-8980527-B2 | Pattern forming process and resist compostion | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-17 | — | — | US | disclosed |
| US-8980534-B2 | Method for forming fine pattern, and coating agent for pattern fining | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-03-17 | — | — | US | disclosed |
| US-8980524-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-03-17 | — | — | US | disclosed |
| US-20150072274-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, RESIST FILM USING THE SAME, RESIST-COATED MASK BLANK, METHOD OF FORMING PHOTOMASK AND PATTERN, AND METHOD OF MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-03-12 | — | — | US | disclosed |
| US-8975010-B2 | Method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-03-10 | — | — | US | disclosed |
| US-8975002-B2 | Positive resist composition for immersion exposure and pattern forming method | FUJIFILM CORPORATION (JP) | 2015-03-10 | — | — | US | disclosed |
| US-8968990-B2 | Method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-03-03 | — | — | US | disclosed |
| US-8968979-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-03 | — | — | US | disclosed |
| US-8968979-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-03 | — | — | US | disclosed |
| US-8968973-B2 | Color filter and production method thereof, and solid-state image sensor using the same | FUJIFILM CORPORATION (JP) | 2015-03-03 | — | — | US | disclosed |
| US-8962233-B2 | Actinic-ray—or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-02-24 | — | — | US | disclosed |
| US-20150050600-A9 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2015-02-19 | — | — | US | disclosed |
| US-8956803-B2 | Sulfonium salt, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-17 | — | — | US | disclosed |
| US-8956803-B2 | Sulfonium salt, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-17 | — | — | US | disclosed |
| US-8957160-B2 | Preparation of polymer, resulting polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-17 | — | — | US | disclosed |
| US-8957160-B2 | Preparation of polymer, resulting polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-17 | — | — | US | disclosed |
| US-8956801-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-02-17 | — | — | US | disclosed |
| US-8956807-B2 | Method for forming resist pattern, and composition for forming resist underlayer film | JSR CORPORATION (JP) | 2015-02-17 | — | — | US | disclosed |
| US-8956810-B2 | — | — | 2015-02-17 | — | — | US | disclosed |
| US-8956800-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-02-17 | — | — | US | disclosed |
| US-20150044616-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2015-02-12 | — | — | US | disclosed |
| US-8951718-B2 | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method | FUJIFILM CORPORATION (JP) | 2015-02-10 | — | — | US | disclosed |
| US-8951890-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-02-10 | — | — | US | disclosed |
| US-8945812-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-02-03 | — | — | US | disclosed |
| US-8945809-B2 | Fluorinated monomer, fluorinated polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-03 | — | — | US | disclosed |
| US-8945810-B2 | Positive resist composition and pattern-forming method | FUJIFILM CORPORATION (JP) | 2015-02-03 | — | — | US | disclosed |
| US-8945809-B2 | Fluorinated monomer, fluorinated polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-03 | — | — | US | disclosed |
| US-8940471-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-01-27 | — | — | US | disclosed |
| US-8940476-B2 | Pattern forming method, actinic-ray-sensitive or radiation-sensitive resin composition, and resist film | FUJIFILM CORPORATION (JP) | 2015-01-27 | — | — | US | disclosed |
| US-8932795-B2 | Resist composition, method of forming resist pattern, novel compound, and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-01-13 | — | — | US | disclosed |
| US-8933144-B2 | Curable composition for imprint, pattern-forming method and pattern | FUJIFILM CORPORATION (JP) | 2015-01-13 | — | — | US | disclosed |
| US-8932794-B2 | Positive photosensitive composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2015-01-13 | — | — | US | disclosed |
| US-20150010855-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2015-01-08 | — | — | US | disclosed |
| US-20150010857-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-01-08 | — | — | US | disclosed |
| US-8927191-B2 | Resist composition, method of forming resist pattern and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-01-06 | — | — | US | disclosed |
| US-20150004533-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE SAME | FUJIFILM CORPORATION (JP) | 2015-01-01 | — | — | US | disclosed |
| US-8920889-B2 | Optical film, polarizing plate, and image-forming display device | FUJIFILM CORPORATION (JP) | 2014-12-30 | — | — | US | disclosed |
| US-8916332-B2 | Resist composition, method of forming resist pattern, and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-12-23 | — | — | US | disclosed |
| US-8916331-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-12-23 | — | — | US | disclosed |
| US-8916331-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-12-23 | — | — | US | disclosed |
| US-20140370425-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, PHOTOMASK BLANK AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2014-12-18 | — | — | US | disclosed |
| US-8911930-B2 | Method of forming pattern using actinic-ray or radiation-sensitive resin composition, and pattern | FUJIFILM CORPORATION (JP) | 2014-12-16 | — | — | US | disclosed |
| US-8911928-B2 | Resist composition, method of forming resist pattern, polymeric compound and method of producing the same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-12-16 | — | — | US | disclosed |
| US-20140363758-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-12-11 | — | — | US | disclosed |
| US-20140363772-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-12-11 | — | — | US | disclosed |
| US-20140356771-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-12-04 | — | — | US | disclosed |
| US-8900793-B2 | Polymer, chemically amplified resist composition, and patterning process using said chemically amplified resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-12-02 | — | — | US | disclosed |
| US-8900796-B2 | Acid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-12-02 | — | — | US | disclosed |
| US-8900789-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2014-12-02 | — | — | US | disclosed |
| US-8900788-B2 | Resist composition for immersion exposure and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-12-02 | — | — | US | disclosed |
| US-8900796-B2 | Acid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-12-02 | — | — | US | disclosed |
| US-8900793-B2 | Polymer, chemically amplified resist composition, and patterning process using said chemically amplified resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-12-02 | — | — | US | disclosed |
| US-8900795-B2 | Resist composition, method of forming resist pattern and novel compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-12-02 | — | — | US | disclosed |
| US-20140349225-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-11-27 | — | — | US | disclosed |
| US-20140349224-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-11-27 | — | — | US | disclosed |
| US-20140349223-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY-OR RADIATION-SENSITIVE FILM THEREFROM, METHOD OF FORMING PATTERN, PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND COMPOUND | FUJIFILM CORPORATION (JP) | 2014-11-27 | — | — | US | disclosed |
| US-20140349221-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD AND RESIST FILM USING THE COMPOSITION, AND ELECTRONIC DEVICE MANUFACTURING METHOD AND ELECTRONIC DEVICE USING THESE | FUJIFILM CORPORATION (JP) | 2014-11-27 | — | — | US | disclosed |
| US-8895225-B2 | Method of forming patterns | FUJIFILM CORPORATION (JP) | 2014-11-25 | — | — | US | disclosed |
| US-8895222-B2 | Actinic ray-sensitive or radiation-sensitive resin composition and resist film and pattern forming method using the composition | FUJIFILM CORPORATION (JP) | 2014-11-25 | — | — | US | disclosed |
| US-20140342275-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2014-11-20 | — | — | US | disclosed |
| US-8889236-B2 | — | — | 2014-11-18 | — | — | US | disclosed |
| US-8883396-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-11-11 | — | — | US | disclosed |
| US-8877432-B2 | Method of forming resist pattern and resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-11-04 | — | — | US | disclosed |
| US-8877969-B2 | Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2014-11-04 | — | — | US | disclosed |
| US-8877421-B2 | Positive resist composition and pattern-forming method | FUJIFILM CORPORATION (JP) | 2014-11-04 | — | — | US | disclosed |
| US-20140322650-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-10-30 | — | — | US | disclosed |
| US-20140322650-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-10-30 | — | — | US | disclosed |
| US-8871421-B2 | Positive resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2014-10-28 | — | — | US | disclosed |
| US-8871642-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2014-10-28 | — | — | US | disclosed |
| US-8865389-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern | FUJIFILM CORPORATION (JP) | 2014-10-21 | — | — | US | disclosed |
| US-8865395-B2 | Method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-10-21 | — | — | US | disclosed |
| US-20140308605-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-10-16 | — | — | US | disclosed |
| US-8859180-B2 | Copolymer and composition for semiconductor lithography and process for producing the copolymer | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2014-10-14 | — | — | US | disclosed |
| US-8859180-B2 | Copolymer and composition for semiconductor lithography and process for producing the copolymer | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2014-10-14 | — | — | US | disclosed |
| US-8859194-B2 | Polymer compound, and resist-protecting film composition including same for a liquid immersion exposure process | DONGJIN SEMICHEM CO., LTD. (KR) | 2014-10-14 | — | — | US | disclosed |
| US-8859192-B2 | Negative pattern forming method and resist pattern | FUJIFILM CORPORATION (JP) | 2014-10-14 | — | — | US | disclosed |
| US-8859194-B2 | Polymer compound, and resist-protecting film composition including same for a liquid immersion exposure process | DONGJIN SEMICHEM CO., LTD. (KR) | 2014-10-14 | — | — | US | disclosed |
| US-8852845-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method using the same, and resin | FUJIFILM CORPORATION (JP) | 2014-10-07 | — | — | US | disclosed |
| US-8852847-B2 | Method of forming patterns | FUJIFILM CORPORATION (JP) | 2014-10-07 | — | — | US | disclosed |
| US-20140296561-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD | SHINETSU CHEMICAL CO (JP) | 2014-10-02 | — | — | US | disclosed |
| US-20140295332-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE SAME | FUJIFILM CORPORATION (JP) | 2014-10-02 | — | — | US | disclosed |
| US-20140296561-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD | SHINETSU CHEMICAL CO (JP) | 2014-10-02 | — | — | US | disclosed |
| US-8846291-B2 | Resist composition, method of forming resist pattern, and new compound | TOKYO OHKA KOGYO CO. LTD. (JP) | 2014-09-30 | — | — | US | disclosed |
| US-8846293-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the same composition | FUJIFILM CORPORATION (JP) | 2014-09-30 | — | — | US | disclosed |
| US-8846838-B2 | Fluorine-containing block copolymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-09-30 | — | — | US | disclosed |
| US-8846290-B2 | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2014-09-30 | — | — | US | disclosed |
| US-20140287363-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, RESIST FILM, PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE, EACH USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2014-09-25 | — | — | US | disclosed |
| US-20140287361-A1 | RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-09-25 | — | — | US | disclosed |
| US-20140287206-A1 | WHITE INK COMPOSITION, INK SET FOR FORMING MULTIPLE LAYERS, IMAGE FORMING METHOD AND PRINTED MATTER | FUJIFILM CORPORATION (JP) | 2014-09-25 | — | — | US | disclosed |
| US-20140288171-A1 | ACRYLIC POLYMERS CONTAINING METALLIC NANOPARTICLES | THE BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM | 2014-09-25 | — | — | US | disclosed |
| US-20140287360-A1 | RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-09-25 | — | — | US | disclosed |
| US-20140287362-A1 | RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-09-25 | — | — | US | disclosed |
| US-8841060-B2 | Actinic-ray-sensitive or radiation-sensitive resin composition, resist film and pattern forming method each using the composition, method for preparing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2014-09-23 | — | — | US | disclosed |
| WO-2014142360-A1 | METHOD OF FORMING PATTERN, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, PROCESS FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-09-18 | — | — | WO | disclosed |
| US-20140272707-A1 | SULFONIUM SALT, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-09-18 | — | — | US | disclosed |
| US-20140272707-A1 | SULFONIUM SALT, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-09-18 | — | — | US | disclosed |
| US-20140272692-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND RESIN | FUJIFILM CORPORATION (JP) | 2014-09-18 | — | — | US | disclosed |
| US-8835094-B2 | Fluoroalcohol, fluorinated monomer, polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-09-16 | — | — | US | disclosed |
| US-8835094-B2 | Fluoroalcohol, fluorinated monomer, polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-09-16 | — | — | US | disclosed |
| US-8835098-B2 | Method of forming pattern | FUJIFILM CORPORATION (JP) | 2014-09-16 | — | — | US | disclosed |
| US-8834742-B2 | Polymer-doped vertically-aligned nematic liquid crystals | CALIFORNIA INSTITUTE OF TECHNOLOGY (US) | 2014-09-16 | — | — | US | disclosed |
| US-20140255662-A1 | CURABLE COMPOSITION FOR IMPRINT, PATTERN-FORMING METHOD AND PATTERN | FUJIFILM CORPORATION (JP) | 2014-09-11 | — | — | US | disclosed |
| US-8828643-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2014-09-09 | — | — | US | disclosed |
| WO-2014133187-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND COMPOUND | FUJIFILM CORPORATION (JP) | 2014-09-04 | — | — | WO | disclosed |
| US-20140248562-A1 | ACTINIC RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2014-09-04 | — | — | US | disclosed |
| US-20140248473-A1 | PROCESS FOR PRODUCING DECORATIVE SHEET, DECORATIVE SHEET, DECORATIVE SHEET MOLDED PRODUCT, PROCESS FOR PRODUCING IN-MOLD MOLDED ARTICLE, AND IN-MOLD MOLDED ARTICLE | FUJIFILM CORPORATION (JP) | 2014-09-04 | — | — | US | disclosed |
| US-20140248556-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-09-04 | — | — | US | disclosed |
| US-8822129-B2 | Pattern forming method, electron beam-sensitive or extreme ultraviolet-sensitive composition, resist film, manufacturing method of electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2014-09-02 | — | — | US | disclosed |
| US-20140242519-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-28 | — | — | US | disclosed |
| US-20140242359-A1 | METHOD OF FORMING PATTERN AND COMPOSITION FOR CROSSLINKED LAYER FORMATION TO BE USED IN THE METHOD | FUJIFILM CORPORATION (JP) | 2014-08-28 | — | — | US | disclosed |
| US-20140242505-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-08-28 | — | — | US | disclosed |
| US-20140242519-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-28 | — | — | US | disclosed |
| US-8815492-B2 | Chemically amplified positive resist composition for ArF immersion lithography and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-26 | — | — | US | disclosed |
| US-8815492-B2 | Chemically amplified positive resist composition for ArF immersion lithography and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-26 | — | — | US | disclosed |
| US-20140234759-A1 | ACTINIC RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2014-08-21 | — | — | US | disclosed |
| US-20140234761-A1 | PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, RESIST COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-08-21 | — | — | US | disclosed |
| US-20140234762-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-08-21 | — | — | US | disclosed |
| US-8808965-B2 | Pattern forming method, pattern, chemical amplification resist composition and resist film | FUJIFILM CORPORATION (JP) | 2014-08-19 | — | — | US | disclosed |
| US-8808975-B2 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2014-08-19 | — | — | US | disclosed |
| US-8808961-B2 | Composition, resist film, pattern forming method, and inkjet recording method | FUJIFILM CORPORATION (JP) | 2014-08-19 | — | — | US | disclosed |
| US-20140224140-A1 | PRINTING METHOD USING LITHOGRAPHIC PRINTING PLATE PRECURSOR OF ON-PRESS DEVELOPMENT TYPE | FUJIFILM COPORATION (JP) | 2014-08-14 | — | — | US | disclosed |
| US-20140227637-A1 | PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-08-14 | — | — | US | disclosed |
| US-20140227637-A1 | PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-08-14 | — | — | US | disclosed |
| US-20140227636-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2014-08-14 | — | — | US | disclosed |
| US-8802349-B2 | Actinic ray-sensitive or radiation-sensitive resin composition and resist film and pattern forming method using the composition | FUJIFILM CORPORATION (JP) | 2014-08-12 | — | — | US | disclosed |
| WO-2014119698-A1 | PATTERN FORMING METHOD, COMPOUND USED THEREIN, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-08-07 | — | — | WO | disclosed |
| US-20140221673-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-08-07 | — | — | US | disclosed |
| US-8795945-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2014-08-05 | — | — | US | disclosed |
| US-8795942-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-05 | — | — | US | disclosed |
| US-8795947-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-08-05 | — | — | US | disclosed |
| US-8795944-B2 | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the composition | FUJIFILM CORPORATION (JP) | 2014-08-05 | — | — | US | disclosed |
| US-8795946-B2 | Polymerizable ester compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-05 | — | — | US | disclosed |
| US-8795948-B2 | Resist composition, method of forming resist pattern and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-08-05 | — | — | US | disclosed |
| US-8795946-B2 | Polymerizable ester compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-05 | — | — | US | disclosed |
| US-8795942-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-05 | — | — | US | disclosed |
| US-20140212796-A1 | PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET-SENSITIVE COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-07-31 | — | — | US | disclosed |
| US-20140212811-A1 | PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-07-31 | — | — | US | disclosed |
| US-20140212814-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM, METHOD OF FORMING PATTERN USING THE COMPOSITION, PROCESS FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-07-31 | — | — | US | disclosed |
| US-8790868-B2 | Method of forming resist pattern and negative tone-development resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-07-29 | — | — | US | disclosed |
| US-8790860-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and resist film, pattern forming method, method for preparing electronic device, and electronic device, each using the same | FUJIFILM CORPORATION (JP) | 2014-07-29 | — | — | US | disclosed |
| US-20140205956-A1 | METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD (JP) | 2014-07-24 | — | — | US | disclosed |
| US-20140205947-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2014-07-24 | — | — | US | disclosed |
| US-8785105-B2 | Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-07-22 | — | — | US | disclosed |
| US-8785105-B2 | Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-07-22 | — | — | US | disclosed |
| US-8785104-B2 | Resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2014-07-22 | — | — | US | disclosed |
| US-8785106-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-07-22 | — | — | US | disclosed |
| US-8779023-B2 | In situ formation of nanoparticles in resins | THE BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM (US) | 2014-07-15 | — | — | US | disclosed |
| US-8778592-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-07-15 | — | — | US | disclosed |
| US-8778595-B2 | Resist composition, method of forming resist pattern, and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-07-15 | — | — | US | disclosed |
| US-20140193749-A1 | PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-07-10 | — | — | US | disclosed |
| US-8771916-B2 | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2014-07-08 | — | — | US | disclosed |
| US-8765332-B2 | Green curable composition, color filter and method of producing same | FUJIFILM CORPORATION (JP) | 2014-07-01 | — | — | US | disclosed |
| US-8765354-B2 | Resist composition for negative development and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-07-01 | — | — | US | disclosed |
| US-8765352-B2 | Resist composition, method of forming resist pattern, novel compound, and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-07-01 | — | — | US | disclosed |
| US-8759462-B2 | Method for producing resist copolymer having low molecular weight | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2014-06-24 | — | — | US | disclosed |
| US-20140170564-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESING COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM USING THE COMPOSITION, AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2014-06-19 | — | — | US | disclosed |
| US-8753801-B2 | Photosensitive composition, pattern forming material, and photosensitive film, pattern forming method, pattern film, low refractive index film, optical device and solid-state imaging device each using the same | FUJIFILM CORPORATION (JP) | 2014-06-17 | — | — | US | disclosed |
| US-8753802-B2 | Pattern forming method, chemical amplification resist composition and resist film | FUJIFILM CORPORATION (JP) | 2014-06-17 | — | — | US | disclosed |
| US-20140162193-A1 | RESIST COMPOSITION FOR EUV, METHOD OF PRODUCING RESIST COMPOSITION FOR EUV, AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-06-12 | — | — | US | disclosed |
| US-20140162189-A1 | SULFONIUM SALT, POLYMER, POLYMER MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-12 | — | — | US | disclosed |
| US-20140162189-A1 | SULFONIUM SALT, POLYMER, POLYMER MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-12 | — | — | US | disclosed |
| US-8748076-B2 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-10 | — | — | US | disclosed |
| US-8748076-B2 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-10 | — | — | US | disclosed |
| US-8742038-B2 | Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-06-03 | — | — | US | disclosed |
| US-8741509-B2 | Colored curable composition, color filter, and method for producing color filter | FUJIFILM CORPORATION (JP) | 2014-06-03 | — | — | US | disclosed |
| US-8741542-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, film formed using the composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2014-06-03 | — | — | US | disclosed |
| US-20140147788-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-05-29 | — | — | US | disclosed |
| US-20140147790-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-05-29 | — | — | US | disclosed |
| US-8735045-B2 | Positive resist composition, method of forming resist pattern, and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-05-27 | — | — | US | disclosed |
| US-8735048-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the composition and pattern forming method | FUJIFILM CORPORATION (JP) | 2014-05-27 | — | — | US | disclosed |
| US-8735052-B2 | Surface modifying material, method of forming resist pattern, and method of forming pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-05-27 | — | — | US | disclosed |
| US-20140141373-A1 | COMPOUND, RADICAL POLYMERIZATION INITIATOR, METHOD FOR PRODUCING COMPOUND, POLYMER, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-05-22 | — | — | US | disclosed |
| US-20140141360-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-05-22 | — | — | US | disclosed |
| US-8728708-B2 | Photosensitive resin composition, oxime sulfonate compound, method for forming cured film, cured film, organic EL display device, and liquid crystal display device | FUJIFILM CORPORATION (JP) | 2014-05-20 | — | — | US | disclosed |
| US-8728708-B2 | Photosensitive resin composition, oxime sulfonate compound, method for forming cured film, cured film, organic EL display device, and liquid crystal display device | FUJIFILM CORPORATION (JP) | 2014-05-20 | — | — | US | disclosed |
| US-20140134544-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2014-05-15 | — | — | US | disclosed |
| US-20140134541-A1 | POSITIVE RESIST COMPOSITION, RESIN USED FOR THE POSITIVE RESIST COMPOSITION, COMPOUND USED FOR SYNTHESIS OF THE RESIN AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2014-05-15 | — | — | US | disclosed |
| US-8722319-B2 | Pattern forming method, chemical amplification resist composition and resist film | FUJIFILM CORPORATION (JP) | 2014-05-13 | — | — | US | disclosed |
| US-20140127626-A1 | RESIST COMPOSITION FOR NEGATIVE DEVELOPMENT WHICH IS USED FOR FORMATION OF GUIDE PATTERN, GUIDE PATTERN FORMATION METHOD, AND METHOD FOR FORMING PATTERN ON LAYER CONTAINING BLOCK COPOLYMER | RIKEN (JP) | 2014-05-08 | — | — | US | disclosed |
| US-20140127627-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN-FORMING METHOD USING THE SAME | ITO TAKAYUKI (JP) | 2014-05-08 | — | — | US | disclosed |
| US-20140127629-A1 | METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2014-05-08 | — | — | US | disclosed |
| US-8715903-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20140120472-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-05-01 | — | — | US | disclosed |
| US-8709701-B2 | Resist underlayer film forming composition for lithography, containing aromatic fused ring-containing resin | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-04-29 | — | — | US | disclosed |
| US-8709704-B2 | Pattern forming method using developer containing organic solvent and rinsing solution for use in the pattern forming method | FUJIFILM CORPORATION (JP) | 2014-04-29 | — | — | US | disclosed |
| US-20140114080-A1 | FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-04-24 | — | — | US | disclosed |
| US-20140114080-A1 | FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-04-24 | — | — | US | disclosed |
| US-20140113236-A1 | SOLVENT DEVELOPABLE NEGATIVE RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND METHOD FOR FORMING PATTERN OF LAYER INCLUDING BLOCK COPOLYMER | RIKEN (JP) | 2014-04-24 | — | — | US | disclosed |
| US-8703384-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-04-22 | — | — | US | disclosed |
| US-8703384-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-04-22 | — | — | US | disclosed |
| US-8691490-B2 | Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-04-08 | — | — | US | disclosed |
| US-8691490-B2 | Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-04-08 | — | — | US | disclosed |
| US-20140087310-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-03-27 | — | — | US | disclosed |
| US-8679724-B2 | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2014-03-25 | — | — | US | disclosed |
| US-20140080068-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2014-03-20 | — | — | US | disclosed |
| US-20140072905-A1 | POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANK, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2014-03-13 | — | — | US | disclosed |
| US-8669042-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2014-03-11 | — | — | US | disclosed |
| WO-2014034533-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE, AND COMPOUND | FUJIFILM CORPORATION (JP) | 2014-03-06 | — | — | WO | disclosed |
| US-8663907-B2 | Method of forming pattern | FUJIFILM CORPORATION (JP) | 2014-03-04 | — | — | US | disclosed |
| US-20140057209-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2014-02-27 | — | — | US | disclosed |
| US-8658343-B2 | Resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-02-25 | — | — | US | disclosed |
| US-8658346-B2 | Pattern forming process, chemically amplified positive resist composition, and resist-modifying composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-02-25 | — | — | US | disclosed |
| US-8658346-B2 | Pattern forming process, chemically amplified positive resist composition, and resist-modifying composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-02-25 | — | — | US | disclosed |
| US-8652756-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-02-18 | — | — | US | disclosed |
| US-20140045117-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-02-13 | — | — | US | disclosed |
| US-8647812-B2 | Pattern forming method, chemical amplification resist composition and resist film | FUJIFILM CORPORATION (JP) | 2014-02-11 | — | — | US | disclosed |
| US-8647808-B2 | Fluorinated monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-02-11 | — | — | US | disclosed |
| US-8647808-B2 | Fluorinated monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-02-11 | — | — | US | disclosed |
| US-8642253-B2 | Resist composition for negative tone development and pattern forming method using the same | FUJIFILM Incorporated (JP) | 2014-02-04 | — | — | US | disclosed |
| US-8642244-B2 | Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-02-04 | — | — | US | disclosed |
| US-8642245-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming a pattern using the same | FUJIFILM CORPORATION (JP) | 2014-02-04 | — | — | US | disclosed |
| US-20140030652-A1 | PRIMER AND PATTERN FORMING METHOD FOR LAYER INCLUDING BLOCK COPOLYMER | RIKEN (JP) | 2014-01-30 | — | — | US | disclosed |
| US-20140030643-A1 | ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2014-01-30 | — | — | US | disclosed |
| US-8637229-B2 | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method | FUJIFILM CORPORATION (JP) | 2014-01-28 | — | — | US | disclosed |
| US-8637220-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the composition | FUJIFILM CORPORATION (JP) | 2014-01-28 | — | — | US | disclosed |
| US-20140023968-A1 | RESIST PATTERN-FORMING METHOD, RESIST PATTERN-FORMING RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM | JSR CORPORATION (JP) | 2014-01-23 | — | — | US | disclosed |
| US-8632939-B2 | Polymer, chemically amplified positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-01-21 | — | — | US | disclosed |
| US-8632960-B2 | Method of forming resist pattern and negative tone-development resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-01-21 | — | — | US | disclosed |
| US-8632938-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2014-01-21 | — | — | US | disclosed |
| US-8632939-B2 | Polymer, chemically amplified positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-01-21 | — | — | US | disclosed |
| US-8632942-B2 | Method of forming patterns | FUJIFILM CORPORATION (JP) | 2014-01-21 | — | — | US | disclosed |
| US-20140017611-A1 | PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2014-01-16 | — | — | US | disclosed |
| US-20140017617-A1 | METHOD OF PRODUCING AMMONIUM SALT COMPOUND, METHOD OF PRODUCING COMPOUND, AND COMPOUND, POLYMERIC COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-01-16 | — | — | US | disclosed |
| US-8628907-B2 | Positive photosensitive resin composition, method for forming cured film, cured film, organic el display device and liquid crystal display device | FUJIFILM CORPORATION (JP) | 2014-01-14 | — | — | US | disclosed |
| US-8628907-B2 | Positive photosensitive resin composition, method for forming cured film, cured film, organic el display device and liquid crystal display device | FUJIFILM CORPORATION (JP) | 2014-01-14 | — | — | US | disclosed |
| US-8618068-B2 | Methods and low dose regimens for treating red blood cell disorders | TRUSTEES OF BOSTON UNIVERSITY (US) | 2013-12-31 | — | — | US | disclosed |
| US-20130309614-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND AND COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-11-21 | — | — | US | disclosed |
| US-8586288-B2 | Method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-11-19 | — | — | US | disclosed |
| US-8586281-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-11-19 | — | — | US | disclosed |
| US-20130302726-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, RESIST FILM USING THE COMPOSITION, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD, PHOTOMASK AND POLYMER COMPOUND | FUJIFILM CORPORATION (JP) | 2013-11-14 | — | — | US | disclosed |
| US-8574813-B2 | Resist composition for immersion exposure and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-11-05 | — | — | US | disclosed |
| US-8574816-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-11-05 | — | — | US | disclosed |
| US-20130288184-A1 | METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2013-10-31 | — | — | US | disclosed |
| US-20130288179-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND | JSR CORPORATION (JP) | 2013-10-31 | — | — | US | disclosed |
| US-8557499-B2 | Actinic-ray- or radiation-sensitive resin composition, compound and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2013-10-15 | — | — | US | disclosed |
| US-20130266777-A1 | NEGATIVE PATTERN FORMING METHOD AND RESIST PATTERN | FUJIFILM CORPORATION (JP) | 2013-10-10 | — | — | US | disclosed |
| US-8551684-B2 | Polymer for forming resist protection film, composition for forming resist protection film, and method of forming patterns of semiconductor devices using the composition | DONGJIN SEMICHEM CO., LTD. (KR) | 2013-10-08 | — | — | US | disclosed |
| US-20130260312-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-10-03 | — | — | US | disclosed |
| US-20130260314-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-10-03 | — | — | US | disclosed |
| US-20130260319-A1 | METHOD OF PRODUCING POLYMERIC COMPOUND, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-10-03 | — | — | US | disclosed |
| US-20130257034-A1 | INK COMPOSITION, IMAGE FORMING METHOD, AND PRINTED ARTICLE | FUJIFILM CORPORATION (JP) | 2013-10-03 | — | — | US | disclosed |
| US-8546063-B2 | Organic solvent development or multiple development pattern-forming method using electron beams or EUV rays | FUJIFILM CORPORATION (JP) | 2013-10-01 | — | — | US | disclosed |
| US-20130252170-A1 | Polymer Compound, And Resist-Protecting Film Composition Including Same For A Liquid Immersion Exposure Process | DONGJIN SEMICHEM CO., LTD. (KR) | 2013-09-26 | — | — | US | disclosed |
| US-20130252170-A1 | Polymer Compound, And Resist-Protecting Film Composition Including Same For A Liquid Immersion Exposure Process | DONGJIN SEMICHEM CO., LTD. (KR) | 2013-09-26 | — | — | US | disclosed |
| US-20130252180-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-09-26 | — | — | US | disclosed |
| US-20130252171-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-09-26 | — | — | US | disclosed |
| US-8541159-B2 | Positive resist composition for immersion exposure and pattern forming method | FUJIFILM CORPORATION (JP) | 2013-09-24 | — | — | US | disclosed |
| US-8541529-B2 | Positive resist composition, method of forming resist pattern, and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-09-24 | — | — | US | disclosed |
| US-8541158-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-09-24 | — | — | US | disclosed |
| US-8541160-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same | FUJIFILM CORPORATION (JP) | 2013-09-24 | — | — | US | disclosed |
| US-8541158-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-09-24 | — | — | US | disclosed |
| US-20130244176-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-09-19 | — | — | US | disclosed |
| US-8535868-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-09-17 | — | — | US | disclosed |
| US-20130236832-A1 | ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-09-12 | — | — | US | disclosed |
| US-20130236837-A1 | METHOD FOR FORMING A RESIST PATTERN AND A METHOD FOR PROCESSING A SUBSTRATE UTILIZING THE METHOD FOR FORMING A RESIST PATTERN | FUJIFILM CORPORATION (JP) | 2013-09-12 | — | — | US | disclosed |
| US-20130236832-A1 | ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-09-12 | — | — | US | disclosed |
| US-8530148-B2 | Stable formation of high precision fine patterns utilizing positive resist whose solubility increases in positive developer and decreases in negative developer upon irradiation | FUJIFILM CORPORATION (JP) | 2013-09-10 | — | — | US | disclosed |
| US-8530598-B2 | Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-09-10 | — | — | US | disclosed |
| US-8529045-B2 | Ink set and image forming method | FUJIFILM CORPORATION (JP) | 2013-09-10 | — | — | US | disclosed |
| US-20130224658-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130222910-A1 | OPTICAL FILM, POLARIZING PLATE, AND IMAGE-FORMING DISPLAY DEVICE | FUJIFILM CORPORATION (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130224657-A1 | ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130224657-A1 | ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130224659-A1 | POLYMER, MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130224659-A1 | POLYMER, MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130224660-A1 | PREPARATION OF POLYMER, RESULTING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130224656-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130224660-A1 | PREPARATION OF POLYMER, RESULTING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-08-29 | — | — | US | disclosed |
| US-8519073-B2 | Compound and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-08-27 | — | — | US | disclosed |
| US-8518629-B2 | Resist composition for immersion exposure and method of forming resist pattern using the same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-08-27 | — | — | US | disclosed |
| US-20130216950-A1 | LITHOGRAPHIC PRINTING PLATE PRECURSOR AND PLATE MAKING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2013-08-22 | — | — | US | disclosed |
| WO-2013122264-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-08-22 | — | — | WO | disclosed |
| US-20130208045-A1 | INK COMPOSITION, IMAGE FORMING METHOD, AND PRINTED ARTICLE USING THE SAME | FUJIFILM CORPORATION (JP) | 2013-08-15 | — | — | US | disclosed |
| WO-2013117137-A1 | LUPANE TRITERPENOID DERIVATIVES AND PHARMACEUTICAL USE THEREOF | JIANGXI QINGFENG PHARMACEUTICAL INC. (CN) | 2013-08-15 | — | — | WO | disclosed |
| US-20130209941-A1 | METHOD OF FORMING PATTERN | TOKYO ELECTRON LIMITED (JP) | 2013-08-15 | — | — | US | disclosed |
| US-8506853-B2 | Composition for optical materials | FUJIFILM CORPORATION (JP) | 2013-08-13 | — | — | US | disclosed |
| US-8507193-B2 | — | — | 2013-08-13 | — | — | US | disclosed |
| US-8507194-B2 | — | — | 2013-08-13 | — | — | US | disclosed |
| US-8507174-B2 | Positive resist composition, pattern forming method using the composition, and compound for use in the composition | FUJIFILM CORPORATION (JP) | 2013-08-13 | — | — | US | disclosed |
| US-8507172-B2 | Positive resist composition and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2013-08-13 | — | — | US | disclosed |
| WO-2013115345-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-08-08 | — | — | WO | disclosed |
| US-8501387-B2 | — | — | 2013-08-06 | — | — | US | disclosed |
| US-8497395-B2 | Compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-07-30 | — | — | US | disclosed |
| US-20130189620-A1 | POLYMERIZABLE TERTIARY ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-07-25 | — | — | US | disclosed |
| US-20130189620-A1 | POLYMERIZABLE TERTIARY ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-07-25 | — | — | US | disclosed |
| US-20130189619-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-07-25 | — | — | US | disclosed |
| US-20130189618-A1 | METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD (JP) | 2013-07-25 | — | — | US | disclosed |
| US-8492057-B2 | Colored curable composition, color filter, and method for producing color filter | FUJIFILM CORPORATION (JP) | 2013-07-23 | — | — | US | disclosed |
| US-20130183626-A1 | METHOD FOR FORMING FINE PATTERN, AND COATING AGENT FOR PATTERN FINING | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-07-18 | — | — | US | disclosed |
| US-20130183621-A1 | PATTERN FORMING PROCESS AND RESIST COMPOSTION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-07-18 | — | — | US | disclosed |
| US-20130183621-A1 | PATTERN FORMING PROCESS AND RESIST COMPOSTION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-07-18 | — | — | US | disclosed |
| US-8487056-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-07-16 | — | — | US | disclosed |
| US-8486606-B2 | Acrylate derivative, haloester derivative, polymer compound and photoresist composition | KURARAY CO., LTD. (JP) | 2013-07-16 | — | — | US | disclosed |
| US-20130177850-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2013-07-11 | — | — | US | disclosed |
| US-20130177853-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-07-11 | — | — | US | disclosed |
| US-20130177851-A1 | PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2013-07-11 | — | — | US | disclosed |
| US-20130177854-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND NOVEL COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-07-11 | — | — | US | disclosed |
| EP-2613198-A1 | PHOTOSENSITIVE RESIN COMPOSITION, OXIME SULFONATE COMPOUND, METHOD FOR FORMING CURED FILM, CURED FILM, ORGANIC EL DISPLAY DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE | FUJIFILM Corporation (JP) | 2013-07-10 | — | — | EP | disclosed |
| US-20130171415-A1 | PHOTOSENSITIVE RESIN COMPOSITION, OXIME SULFONATE COMPOUND, METHOD FOR FORMING CURED FILM, CURED FILM, ORGANIC EL DISPLAY DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE | FUJIFILM CORPORATION (JP) | 2013-07-04 | — | — | US | disclosed |
| US-20130171562-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-07-04 | — | — | US | disclosed |
| US-20130171415-A1 | PHOTOSENSITIVE RESIN COMPOSITION, OXIME SULFONATE COMPOUND, METHOD FOR FORMING CURED FILM, CURED FILM, ORGANIC EL DISPLAY DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE | FUJIFILM CORPORATION (JP) | 2013-07-04 | — | — | US | disclosed |
| WO-2013100189-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-07-04 | — | — | WO | disclosed |
| WO-2013100158-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE SAME | FUJIFILM CORPORATION (JP) | 2013-07-04 | — | — | WO | disclosed |
| US-8476001-B2 | Pattern forming method | FUJIFILM CORPORATION (JP) | 2013-07-02 | — | — | US | disclosed |
| US-8475997-B2 | Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-07-02 | — | — | US | disclosed |
| US-20130164693-A1 | METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-06-27 | — | — | US | disclosed |
| US-20130157194-A1 | PATTERNING PROCESS, RESIST COMPOSITION, POLYMER, AND POLYMERIZABLE ESTER COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-06-20 | — | — | US | disclosed |
| US-20130157194-A1 | PATTERNING PROCESS, RESIST COMPOSITION, POLYMER, AND POLYMERIZABLE ESTER COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-06-20 | — | — | US | disclosed |
| US-20130157197-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-06-20 | — | — | US | disclosed |
| US-20130157201-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-06-20 | — | — | US | disclosed |
| US-8460850-B2 | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using same | FUFIFILM Corporation (JP) | 2013-06-11 | — | — | US | disclosed |
| US-20130143159-A1 | RESIST COMPOSITION FOR EUV OR EB, AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-06-06 | — | — | US | disclosed |
| US-20130143028-A1 | OPTICAL FILM, METHOD FOR PRODUCING THE SAME, POLARIZING PLATE AND IMAGE DISPLAY DEVICE | FUJIFILM CORPORATION (JP) | 2013-06-06 | — | — | US | disclosed |
| US-20130137047-A1 | METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-05-30 | — | — | US | disclosed |
| US-20130137048-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-05-30 | — | — | US | disclosed |
| US-20130136900-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE, EACH USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-05-30 | — | — | US | disclosed |
| US-8450044-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-05-28 | — | — | US | disclosed |
| US-8450041-B2 | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2013-05-28 | — | — | US | disclosed |
| US-20130130178-A1 | ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH | FUJIFILM CORPORATION (JP) | 2013-05-23 | — | — | US | disclosed |
| US-20130126799-A1 | ELECTROCONDUCTIVE FILM, TOUCH PANEL AND SOLAR BATTERY | FUJIFILM CORPORATION (JP) | 2013-05-23 | — | — | US | disclosed |
| US-20130123446-A1 | METHOD FOR PRODUCING RESIST COPOLYMER HAVING LOW MOLECULAR WEIGHT | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2013-05-16 | — | — | US | disclosed |
| US-20130122425-A1 | METHOD FOR FORMING FINE PATTERN, AND COATING FORMING AGENT FOR PATTERN FINING | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-05-16 | — | — | US | disclosed |
| US-20130122427-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2013-05-16 | — | — | US | disclosed |
| US-8440385-B2 | Positive resist composition, method of forming resist pattern and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-05-14 | — | — | US | disclosed |
| US-20130115557-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2013-05-09 | — | — | US | disclosed |
| US-20130113082-A1 | METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD | FUJIFILM CORPORATION (JP) | 2013-05-09 | — | — | US | disclosed |
| US-20130115556-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2013-05-09 | — | — | US | disclosed |
| US-20130115555-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-05-09 | — | — | US | disclosed |
| US-20130115554-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-05-09 | — | — | US | disclosed |
| US-8435720-B2 | Lithographic printing plate precursor and plate making method thereof | FUJIFILM CORPORATION (JP) | 2013-05-07 | — | — | US | disclosed |
| WO-2013062133-A1 | PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-05-02 | — | — | WO | disclosed |
| US-20130108964-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-05-02 | — | — | US | disclosed |
| US-20130108964-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-05-02 | — | — | US | disclosed |
| US-8431324-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2013-04-30 | — | — | US | disclosed |
| US-20130101936-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-25 | — | — | US | disclosed |
| US-20130101936-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-25 | — | — | US | disclosed |
| US-20130101942-A1 | METHOD FOR FORMING RESIST PATTERN, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2013-04-25 | — | — | US | disclosed |
| US-20130101812-A1 | METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2013-04-25 | — | — | US | disclosed |
| US-8426105-B2 | Resist-modifying composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-23 | — | — | US | disclosed |
| US-8426105-B2 | Resist-modifying composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-23 | — | — | US | disclosed |
| US-8426109-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2013-04-23 | — | — | US | disclosed |
| US-8426101-B2 | Photosensitive composition, pattern-forming method using the photosensitve composition and compound in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2013-04-23 | — | — | US | disclosed |
| US-20130095429-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2013-04-18 | — | — | US | disclosed |
| US-20130095427-A1 | RESIST COMPOSITION FOR EUV OR EB AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-04-18 | — | — | US | disclosed |
| US-8420290-B2 | Acetal compounds and their preparation, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2013-04-16 | — | — | US | disclosed |
| US-20130089819-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND, AND COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-04-11 | — | — | US | disclosed |
| US-20130089821-A1 | RESIST PATTERN FORMATION METHOD AND PATTERN MINIATURIZATION AGENT | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-04-11 | — | — | US | disclosed |
| US-8415085-B2 | Resist composition, method of forming resist pattern, novel compound, and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-04-09 | — | — | US | disclosed |
| US-20130084438-A1 | PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET-SENSITIVE COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-04-04 | — | — | US | disclosed |
| US-20130084523-A1 | RESIST COMPOSITIOIN AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-04-04 | — | — | US | disclosed |
| US-20130078434-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, RESIST FILM, PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE, EACH USING THE SAME | FUJIFILM CORPORATION (JP) | 2013-03-28 | — | — | US | disclosed |
| US-20130078433-A1 | ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM USING THE SAME, PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE, EACH USING THE SAME | FUJIFILM CORPORATION (JP) | 2013-03-28 | — | — | US | disclosed |
| US-20130078426-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH USING THE SAME | FUJIFILM CORPORATION (JP) | 2013-03-28 | — | — | US | disclosed |
| US-20130078432-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-03-28 | — | — | US | disclosed |
| US-20130078572-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-03-28 | — | — | US | disclosed |
| US-8404428-B2 | Positive resist composition, method of forming resist pattern using the same, and fluorine-containing polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-03-26 | — | — | US | disclosed |
| US-8404427-B2 | Photosensitive composition, and pattern-forming method and resist film using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2013-03-26 | — | — | US | disclosed |
| US-20130071789-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-03-21 | — | — | US | disclosed |
| US-20130065180-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-03-14 | — | — | US | disclosed |
| US-8394569-B2 | Resist composition for immersion lithography and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-03-12 | — | — | US | disclosed |
| US-8394578-B2 | Method of forming resist pattern and negative tone-development resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-03-12 | — | — | US | disclosed |
| US-8394570-B2 | Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-03-12 | — | — | US | disclosed |
| US-20130056653-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-03-07 | — | — | US | disclosed |
| US-20130056654-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-03-07 | — | — | US | disclosed |
| US-8389200-B2 | Pattern forming method | FUJIFILM CORPORATION (JP) | 2013-03-05 | — | — | US | disclosed |
| US-20130053518-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-02-28 | — | — | US | disclosed |
| US-20130049149-A1 | METHOD OF FORMING PATTERN, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND ACTINIC-RAY- OR RADIATION-SENSITIVE FILM | FUJIFILM CORPORATION (JP) | 2013-02-28 | — | — | US | disclosed |
| US-20130045445-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-02-21 | — | — | US | disclosed |
| US-20130045365-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2013-02-21 | — | — | US | disclosed |
| US-20130045443-A1 | POLYMER, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-02-21 | — | — | US | disclosed |
| US-8377625-B2 | Method for producing a copolymer solution with a uniform concentration for semiconductor lithography | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2013-02-19 | — | — | US | disclosed |
| US-20130040096-A1 | PATTERN FORMING METHOD AND ACTINIC-RAY- OR RADIATION-SENSTIVE RESIN COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-02-14 | — | — | US | disclosed |
| US-20130034813-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-02-07 | — | — | US | disclosed |
| US-20130034706-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PRODUCTION METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-02-07 | — | — | US | disclosed |
| US-8367310-B2 | Pattern forming process and resist-modifying composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-02-05 | — | — | US | disclosed |
| US-8367299-B2 | Resist composition, method of forming resist pattern, compound and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-02-05 | — | — | US | disclosed |
| US-8361700-B2 | Lithographic printing plate precursor and method of preparing lithographic printing plate | FUJIFILM CORPORATION (JP) | 2013-01-29 | — | — | US | disclosed |
| US-20130022911-A1 | POLYMER, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-01-24 | — | — | US | disclosed |
| US-20130020684-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2013-01-24 | — | — | US | disclosed |
| US-20130017500-A1 | METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-01-17 | — | — | US | disclosed |
| US-20130017484-A1 | POLYMERIZABLE ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-17 | — | — | US | disclosed |
| US-20130017377-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2013-01-17 | — | — | US | disclosed |
| US-20130017501-A1 | METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-01-17 | — | — | US | disclosed |
| US-20130015562-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-01-17 | — | — | US | disclosed |
| US-8354218-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-01-15 | — | — | US | disclosed |
| US-20130011619-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2013-01-10 | — | — | US | disclosed |
| US-20130011785-A1 | PATTERN FORMING METHOD AND RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-01-10 | — | — | US | disclosed |
| US-8349535-B2 | Actinic ray-sensitive or radiation-sensitive resin composition and method of forming pattern therewith | FUJIFILM CORPORATION (JP) | 2013-01-08 | — | — | US | disclosed |
| WO-2013002417-A1 | PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, RESIST COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-01-03 | — | — | WO | disclosed |
| US-20130004741-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-01-03 | — | — | US | disclosed |
| US-20130004740-A1 | ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD EACH USING THE COMPOSITION, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-01-03 | — | — | US | disclosed |
| US-20130004739-A1 | PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-01-03 | — | — | US | disclosed |
| US-8343708-B2 | Positive resist composition and pattern forming method | FUJIFILM CORPORATION (JP) | 2013-01-01 | — | — | US | disclosed |
| US-20120329969-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | MATSUMIYA TASUKU (JP) | 2012-12-27 | — | — | US | disclosed |
| US-20120328982-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-12-27 | — | — | US | disclosed |
| US-20120328993-A1 | METHOD OF PRODUCING POLYMERIC COMPOUND, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-12-27 | — | — | US | disclosed |
| US-8338076-B2 | Resist composition, method of forming resist pattern, novel compound, and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-12-25 | — | — | US | disclosed |
| US-8338075-B2 | Base component which exhibits increased solubility in an alkali developing solution under the action of acid, an acid generator, and organic solvent having a boiling point of at least 150 degrees C.; hole-like resist pattern can be formed with a high level of resolution and minute dimensions | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-12-25 | — | — | US | disclosed |
| US-20120320123-A1 | INK SET AND IMAGE FORMING METHOD | FUJIFILM CORPORATION (JP) | 2012-12-20 | — | — | US | disclosed |
| US-20120322007-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-12-20 | — | — | US | disclosed |
| US-20120321855-A1 | PATTERN FORMING METHOD AND RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-12-20 | — | — | US | disclosed |
| US-20120315449-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2012-12-13 | — | — | US | disclosed |
| US-8329379-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2012-12-11 | — | — | US | disclosed |
| US-8329384-B2 | Resist-modifying composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-11 | — | — | US | disclosed |
| US-8329378-B2 | Positive resist composition, method of forming resist pattern, and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-12-11 | — | — | US | disclosed |
| US-20120308932-A1 | POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS USING SAID CHEMICALLY AMPLIFIED RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-06 | — | — | US | disclosed |
| US-20120308931-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-12-06 | — | — | US | disclosed |
| US-20120308928-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND AND METHOD OF PRODUCING THE SAME | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-12-06 | — | — | US | disclosed |
| US-8324331-B2 | Fluorine-containing compound and polymeric compound | DAITO CHEMIX CORPORATION (JP) | 2012-12-04 | — | — | US | disclosed |
| US-20120301829-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-11-29 | — | — | US | disclosed |
| US-20120301817-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2012-11-29 | — | — | US | disclosed |
| US-20120301831-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-11-29 | — | — | US | disclosed |
| US-20120288691-A1 | PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-11-15 | — | — | US | disclosed |
| US-20120282548-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-11-08 | — | — | US | disclosed |
| US-20120282551-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-11-08 | — | — | US | disclosed |
| US-20120276485-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-11-01 | — | — | US | disclosed |
| US-20120273924-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-11-01 | — | — | US | disclosed |
| US-20120276481-A1 | METHOD OF FORMING RESIST PATTERN AND NEGATIVE TONE-DEVELOPMENT RESIST COMPOSITION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-11-01 | — | — | US | disclosed |
| US-8298748-B2 | Positive resist composition, method of forming resist pattern, and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-10-30 | — | — | US | disclosed |
| US-8298745-B2 | Polymeric compound, positive resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-10-30 | — | — | US | disclosed |
| US-20120271020-A1 | METHOD FOR PRODUCING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY CONTAINING REDUCED AMOUNT OF METAL IMPURITIES, AND METHOD FOR PURIFYING POLYMERIZATION INITIATOR FOR PRODUCTION OF COPOLYMER | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2012-10-25 | — | — | US | disclosed |
| US-20120270155-A1 | COMPOUND, POLYMERIC COMPOUND, ACID GENERATOR, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-10-25 | — | — | US | disclosed |
| US-20120264058-A1 | RESIST COMPOSITION FOR NEGATIVE DEVELOPMENT AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-10-18 | — | — | US | disclosed |
| US-20120264764-A1 | Oxabicycloheptanes and Oxabicycloheptenes, Their Preparation and Use | LIXTE BIOTECHNOLOGY, INC. | 2012-10-18 | — | — | US | disclosed |
| US-20120264052-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD (JP) | 2012-10-18 | — | — | US | disclosed |
| US-20120264061-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-10-18 | — | — | US | disclosed |
| US-20120264054-A1 | PATTERN FORMING METHOD, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-10-18 | — | — | US | disclosed |
| US-8283105-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-10-09 | — | — | US | disclosed |
| US-8283104-B2 | Sulfonate and its derivative, photosensitive acid generator, and resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-09 | — | — | US | disclosed |
| US-20120249995-A1 | RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO. LTD. (JP) | 2012-10-04 | — | — | US | disclosed |
| US-20120251951-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-10-04 | — | — | US | disclosed |
| US-20120251948-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-10-04 | — | — | US | disclosed |
| US-20120244472-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, FILM FORMED USING THE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-09-27 | — | — | US | disclosed |
| US-20120237874-A1 | Actinic-Ray- or Radiation-Sensitive Resin Composition, Compound and Method of Forming Pattern Using the Composition | FUJIFILM CORPORATION (JP) | 2012-09-20 | — | — | US | disclosed |
| US-20120231393-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING A PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-09-13 | — | — | US | disclosed |
| US-8263307-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-09-11 | — | — | US | disclosed |
| US-20120225383-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-09-06 | — | — | US | disclosed |
| US-20120219758-A1 | RESIST COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING NEGATIVE PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-08-30 | — | — | US | disclosed |
| US-20120219911-A1 | LITHOGRAPHIC PRINTING PLATE PRECURSOR AND PLATE MAKING METHOD THEREOF | FUJIFILM CORPORATION (JP) | 2012-08-30 | — | — | US | disclosed |
| US-20120219891-A1 | RESIST COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING NEGATIVE PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-08-30 | — | — | US | disclosed |
| US-20120219910-A1 | PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2012-08-30 | — | — | US | disclosed |
| US-20120220112-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-30 | — | — | US | disclosed |
| US-20120219913-A1 | PATTERN FORMING METHOD, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-08-30 | — | — | US | disclosed |
| US-8252504-B2 | Polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-28 | — | — | US | disclosed |
| US-8252509-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-08-28 | — | — | US | disclosed |
| US-8252505-B2 | Compound and method of producing same, acid generator, resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-08-28 | — | — | US | disclosed |
| US-20120214091-A1 | RESIST FILM, RESIST COATED MASK BLANKS AND METHOD OF FORMING RESIST PATTERN USING THE RESIST FILM, AND CHEMICAL AMPLIFICATION TYPE RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-08-23 | — | — | US | disclosed |
| US-20120214100-A1 | RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-23 | — | — | US | disclosed |
| US-20120214101-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-08-23 | — | — | US | disclosed |
| US-8247160-B2 | Resist composition, method of forming resist pattern, and novel compound and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-08-21 | — | — | US | disclosed |
| US-20120208131-A1 | METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-08-16 | — | — | US | disclosed |
| US-20120207978-A1 | ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-08-16 | — | — | US | disclosed |
| US-20120208124-A1 | RESIST COMPOSITION FOR EUV, METHOD FOR PRODUCING RESIST COMPOSITION FOR EUV, AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-08-16 | — | — | US | disclosed |
| US-20120208128-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-08-16 | — | — | US | disclosed |
| US-8241840-B2 | Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method | FUJIFILM CORPORATION (JP) | 2012-08-14 | — | — | US | disclosed |
| US-20120202151-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND | DAZAI TAKAHIRO (JP) | 2012-08-09 | — | — | US | disclosed |
| US-20120202158-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-09 | — | — | US | disclosed |
| US-20120196226-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-08-02 | — | — | US | disclosed |
| US-20120196228-A1 | RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-02 | — | — | US | disclosed |
| US-RE43560-E1 | Positive photosensitive compositions | FUJIFILM CORPORATION (JP) | 2012-07-31 | — | — | US | disclosed |
| US-8232041-B2 | Positive resist composition, method of forming resist pattern, and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-07-31 | — | — | US | disclosed |
| US-8227183-B2 | Stable formation of high precision fine patterns utilizing positive resist whose solubility increases in positive developer and decreases in negative developer upon irradiation | FUJIFILM CORPORATION (JP) | 2012-07-24 | — | — | US | disclosed |
| US-8227169-B2 | Compound, acid generator, resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-07-24 | — | — | US | disclosed |
| US-20120183908-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2012-07-19 | — | — | US | disclosed |
| US-20120183900-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-07-19 | — | — | US | disclosed |
| US-20120183899-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-07-19 | — | — | US | disclosed |
| US-20120182638-A1 | COLORED CURABLE COMPOSITION, COLOR FILTER, AND METHOD FOR PRODUCING COLOR FILTER | FUJIFILM CORPORATION (JP) | 2012-07-19 | — | — | US | disclosed |
| US-8221956-B2 | Resist composition for immersion exposure, method of forming resist pattern, and flourine-containing polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-07-17 | — | — | US | disclosed |
| US-8216764-B2 | acrylate ester resin having a tertiary alkyl ester-type acid dissociable, dissolution inhibiting group, and acid generator; reducing line width roughness (LWR) and suppressing development of footing which is likely to occur with a substrate having an inorganic antireflection film (inorganic BARC) | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-07-10 | — | — | US | disclosed |
| US-20120171618-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING A PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-07-05 | — | — | US | disclosed |
| US-8211615-B2 | Copolymer for immersion lithography and compositions | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2012-07-03 | — | — | US | disclosed |
| US-20120164574-A1 | ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120160118-A1 | LITHOGRAPHIC PRINTING PLATE PRECURSOR AND LITHOGRAPHIC PRINTING METHOD | FUJIFILM CORPORATION (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120164578-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120164577-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120164580-A1 | NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120164573-A1 | ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-06-28 | — | — | US | disclosed |
| US-8206891-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-26 | — | — | US | disclosed |
| US-8206886-B2 | Photosensitive composition and pattern-forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2012-06-26 | — | — | US | disclosed |
| US-20120156618-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-06-21 | — | — | US | disclosed |
| US-20120156617-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-06-21 | — | — | US | disclosed |
| US-20120148956-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
| US-20120148945-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
| US-20120148955-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NEW COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
| US-20120149916-A1 | NOVEL COMPOUND | CENTRAL GLASS CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
| US-20120148957-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-06-14 | — | — | US | disclosed |
| US-20120148953-A1 | Resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-14 | — | — | US | disclosed |
| US-8192914-B2 | Resist composition for immersion exposure and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-05 | — | — | US | disclosed |
| US-20120135355-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2012-05-31 | — | — | US | disclosed |
| US-20120135348-A1 | ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2012-05-31 | — | — | US | disclosed |
| US-20120135347-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND AND COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-05-31 | — | — | US | disclosed |
| US-20120135357-A1 | POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-31 | — | — | US | disclosed |
| US-20120135350-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-31 | — | — | US | disclosed |
| US-20120129103-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-24 | — | — | US | disclosed |
| US-20120129100-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-05-24 | — | — | US | disclosed |
| US-8182975-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-05-22 | — | — | US | disclosed |
| US-8178284-B2 | Method of forming pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-05-15 | — | — | US | disclosed |
| US-20120115085-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME | FUJIFILM CORPORATION (JP) | 2012-05-10 | — | — | US | disclosed |
| US-20120116038-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING RESIN | TAKESHITA MASARU (JP) | 2012-05-10 | — | — | US | disclosed |
| US-8173354-B2 | Sulfonium salt, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-08 | — | — | US | disclosed |
| US-20120105791-A1 | POLYMER-DOPED VERTICALLY-ALIGNED NEMATIC LIQUID CRYSTALS | NATIONAL SCIENCE FOUNDATION | 2012-05-03 | — | — | US | disclosed |
| US-20120107744-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-05-03 | — | — | US | disclosed |
| US-20120100487-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-04-26 | — | — | US | disclosed |
| US-20120094236-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | SHIONO DAIJU (JP) | 2012-04-19 | — | — | US | disclosed |
| US-20120094235-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-04-19 | — | — | US | disclosed |
| US-8158326-B2 | Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition | FUJIFILM CORPORATION (JP) | 2012-04-17 | — | — | US | disclosed |
| US-20120088194-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2012-04-12 | — | — | US | disclosed |
| US-8153246-B2 | Optical compensatory film, polarizing plate, and liquid crystal display device | FUJIFILM CORPORATION (JP) | 2012-04-10 | — | — | US | disclosed |
| US-20120082939-A1 | ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE RESIN COMPOSITION, AND ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-04-05 | — | — | US | disclosed |
| US-8148044-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2012-04-03 | — | — | US | disclosed |
| US-20120077126-A1 | Fluorine-Containing Compound, Fluorine-Containing Polymer Compound, Resist Composition, Top Coat Composition And Pattern Formation Method | CENTRAL GLASS COMPANY, LIMITED (JP) | 2012-03-29 | — | — | US | disclosed |
| US-20120077122-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-03-29 | — | — | US | disclosed |
| US-20120077125-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-03-29 | — | — | US | disclosed |
| US-20120077121-A1 | FLUOROALCOHOL, FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-29 | — | — | US | disclosed |
| US-20120077131-A1 | METHOD OF FORMING PATTERN USING ACTINIC-RAY OR RADIATION-SENSITIVE RESIN COMPOSITION, AND PATTERN | FUJIFILM CORPORATION (JP) | 2012-03-29 | — | — | US | disclosed |
| US-20120076996-A1 | RESIST COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING PATTERN THEREWITH | FUJIFILM CORPORATION (JP) | 2012-03-29 | — | — | US | disclosed |
| US-20120076997-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2012-03-29 | — | — | US | disclosed |
| US-8142979-B2 | Resist composition for immersion exposure and method of forming resist pattern using the same | Tokyo Ohka Tokyo Co., Ltd. (JP) | 2012-03-27 | — | — | US | disclosed |
| US-8142977-B2 | mixture of resin which decomposes under acid under exposure to actinic radiation, acid generator | FUJIFILM CORPORATION (JP) | 2012-03-27 | — | — | US | disclosed |
| US-20120071638-A1 | Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2012-03-22 | — | — | US | disclosed |
| US-8137890-B2 | Colored photosensitive composition, color filter, and method for manufacturing color filter | FUJIFILM CORPORATION (JP) | 2012-03-20 | — | — | US | disclosed |
| US-20120058431-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-03-08 | — | — | US | disclosed |
| US-20120058430-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-03-08 | — | — | US | disclosed |
| US-20120058427-A1 | PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-03-08 | — | — | US | disclosed |
| US-20120058436-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2012-03-08 | — | — | US | disclosed |
| US-20120052449-A1 | METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2012-03-01 | — | — | US | disclosed |
| US-20120052442-A1 | LITHOGRAPHIC PRINTING PLATE PRECURSOR AND PLATE MAKING METHOD THEREOF | FUJIFILM CORPORATION (JP) | 2012-03-01 | — | — | US | disclosed |
| US-8124310-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-02-28 | — | — | US | disclosed |
| US-8124313-B2 | Resist composition, method of forming resist pattern, novel compound, and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20120045616-A1 | POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING CURED FILM, CURED FILM, ORGANIC EL DISPLAY DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE | FUJIFILM CORPORATION (JP) | 2012-02-23 | — | — | US | disclosed |
| US-8114571-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-02-14 | — | — | US | disclosed |
| US-8114571-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-02-14 | — | — | US | disclosed |
| US-8114570-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-02-14 | — | — | US | disclosed |
| US-8114570-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-02-14 | — | — | US | disclosed |
| US-20120034564-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2012-02-09 | — | — | US | disclosed |
| US-20120034559-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING PATTERN THEREWITH | FUJIFILM CORPORATION (JP) | 2012-02-09 | — | — | US | disclosed |
| US-20120028196-A1 | METHOD OF FORMING PATTERN AND ORGANIC PROCESSING LIQUID FOR USE IN THE METHOD | FUJIFILM CORPORATION (JP) | 2012-02-02 | — | — | US | disclosed |
| US-8105747-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-01-31 | — | — | US | disclosed |
| US-8105749-B2 | Polymer compound, positive resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-01-31 | — | — | US | disclosed |
| US-8105748-B2 | Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-31 | — | — | US | disclosed |
| US-8105748-B2 | Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-31 | — | — | US | disclosed |
| US-8101335-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-24 | — | — | US | disclosed |
| US-20120015301-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-01-19 | — | — | US | disclosed |
| US-20120015302-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-19 | — | — | US | disclosed |
| US-20120015297-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO.CO., LTD. (JP) | 2012-01-19 | — | — | US | disclosed |
| US-20120015299-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-01-19 | — | — | US | disclosed |
| US-20120015293-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-19 | — | — | US | disclosed |
| US-20120006788-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-12 | — | — | US | disclosed |
| US-20120009521-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-01-12 | — | — | US | disclosed |
| US-20120009522-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-12 | — | — | US | disclosed |
| US-20120009520-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-01-12 | — | — | US | disclosed |
| US-8092977-B2 | additional resin contains an oxime sulfonate group, which is insoluble in an alkali developer and becomes soluble in alkali developer by acid generating from acid generator; use in ultramicrolithography; resolution, sensitivity, good defocus latitude, good pattern profile, line edge roughness | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-8092976-B2 | High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-20120003589-A1 | POLYMER FOR FORMING RESIST PROTECTION FILM, COMPOSITION FOR FORMING RESIST PROTECTION FILM, AND METHOD OF FORMING PATTERNS OF SEMICONDUCTOR DEVICES USING THE COMPOSITION | DONGJIN SEMICHEM CO., LTD. (KR) | 2012-01-05 | — | — | US | disclosed |
| US-20120003436-A1 | PHOTOSENSITIVE COMPOSITION, PATTERN FORMING MATERIAL, AND PHOTOSENSITIVE FILM, PATTERN FORMING METHOD, PATTERN FILM, LOW REFRACTIVE INDEX FILM, OPTICAL DEVICE AND SOLID-STATE IMAGING DEVICE EACH USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-05 | — | — | US | disclosed |
| US-20120003583-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-01-05 | — | — | US | disclosed |
| US-20120003590-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-05 | — | — | US | disclosed |
| US-20120003437-A1 | PHOTOSENSITIVE COMPOSITION, PATTERN FORMING MATERIAL AND PHOTOSENSITIVE FILM USING THE SAME, PATTERN FORMING METHOD, PATTERN FILM, ANTIREFLECTION FILM, INSULATING FILM, OPTICAL DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2012-01-05 | — | — | US | disclosed |
| US-20120003591-A1 | METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD | FUJIFILM CORPORATION (JP) | 2012-01-05 | — | — | US | disclosed |
| US-20120003585-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-01-05 | — | — | US | disclosed |
| US-8088537-B2 | Resist top coat composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-03 | — | — | US | disclosed |
| US-8088557-B2 | Method of forming patterns | FUJIFILM CORPORATION (JP) | 2012-01-03 | — | — | US | disclosed |
| US-8088550-B2 | Positive resist composition and pattern forming method | FUJIFILM CORPORATION (JP) | 2012-01-03 | — | — | US | disclosed |
| US-20110318687-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-12-29 | — | — | US | disclosed |
| US-20110318693-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-12-29 | — | — | US | disclosed |
| US-20110318542-A1 | Fluorine-Containing Compound, Fluorine-Containing Polymer Compound, Resist Composition and Patterning Method Using Same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2011-12-29 | — | — | US | disclosed |
| US-20110318691-A1 | RESIST COMPOSITION FOR SEMICONDUCTOR, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-12-29 | — | — | US | disclosed |
| US-20110306699-A1 | IN SITU FORMATION OF NANOPARTICLES IN RESINS | THE BOARD OF REGENTS OF THE UNIVERSITY OF TEXAS SYSTEM (US) | 2011-12-15 | — | — | US | disclosed |
| US-8067516-B2 | Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2011-11-29 | — | — | US | disclosed |
| US-20110287362-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-11-24 | — | — | US | disclosed |
| US-8062826-B2 | Adjust solubility of alkali developer using acid; radiation with actinic radiation | FUJIFILM CORPORATION (JP) | 2011-11-22 | — | — | US | disclosed |
| US-8062831-B2 | Carboxyl-containing lactone compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-11-22 | — | — | US | disclosed |
| US-8057985-B2 | Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-11-15 | — | — | US | disclosed |
| US-8057981-B2 | Resist composition, resist protective coating composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-11-15 | — | — | US | disclosed |
| US-8053161-B2 | Improved in line edge roughness not only in ordinary exposure (dry exposure) but also in immersion exposure | FUJIFILM CORPORATION (JP) | 2011-11-08 | — | — | US | disclosed |
| US-8053165-B2 | Hydroxyl-containing monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-11-08 | — | — | US | disclosed |
| US-20110269071-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-11-03 | — | — | US | disclosed |
| US-20110269072-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-11-03 | — | — | US | disclosed |
| US-20110269076-A1 | SURFACE MODIFYING MATERIAL, METHOD OF FORMING RESIST PATTERN, AND METHOD OF FORMING PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-11-03 | — | — | US | disclosed |
| US-8048610-B2 | Sulfonium salt-containing polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-11-01 | — | — | US | disclosed |
| US-8048610-B2 | Sulfonium salt-containing polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-11-01 | — | — | US | disclosed |
| US-20110262872-A1 | METHOD OF FORMING RESIST PATTERN AND RESIST COMPOSITION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-10-27 | — | — | US | disclosed |
| US-20110262864-A1 | Method of forming resist pattern and negative tone-development resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-10-27 | — | — | US | disclosed |
| US-8043791-B2 | Positive photosensitive composition, pattern forming method using the composition and resin for use in the composition | FUJIFILM CORPORATION (JP) | 2011-10-25 | — | — | US | disclosed |
| US-8043788-B2 | Alkali soluble resin; immersion lithography | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-10-25 | — | — | US | disclosed |
| US-8039200-B2 | Photosensitive composition and pattern-forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2011-10-18 | — | — | US | disclosed |
| US-8039098-B2 | Coating composition, optical film, antireflective film, polarizing plate, and display device using the same | FUJIFILM CORPORATION (JP) | 2011-10-18 | — | — | US | disclosed |
| US-8039198-B2 | Sulfonium salt-containing polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-10-18 | — | — | US | disclosed |
| US-8039197-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2011-10-18 | — | — | US | disclosed |
| US-20110251149-A1 | METHODS AND LOW DOSE REGIMENS FOR TREATING RED BLOOD CELL DISORDERS | TRUSTEES OF BOSTON UNIVERSITY (US) | 2011-10-13 | — | — | US | disclosed |
| US-20110250543-A1 | PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2011-10-13 | — | — | US | disclosed |
| US-20110250539-A1 | FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-10-13 | — | — | US | disclosed |
| US-8034536-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-10-11 | — | — | US | disclosed |
| US-8034537-B2 | Positive resist composition and pattern forming method | FUJIFILM CORPORATION (JP) | 2011-10-11 | — | — | US | disclosed |
| US-8034547-B2 | Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method | FUJIFILM CORPORATION (JP) | 2011-10-11 | — | — | US | disclosed |
| US-20110244392-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-10-06 | — | — | US | disclosed |
| US-20110244399-A1 | METHOD OF FORMING RESIST PATTERN AND NEGATIVE TONE-DEVELOPMENT RESIST COMPOSITION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-10-06 | — | — | US | disclosed |
| US-8029972-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-10-04 | — | — | US | disclosed |
| US-20110236828-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20110236824-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20110229832-A1 | PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2011-09-22 | — | — | US | disclosed |
| US-8021822-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-20 | — | — | US | disclosed |
| US-8021822-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-20 | — | — | US | disclosed |
| US-8021823-B2 | Positive resist composition, method of forming resist pattern, and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-09-20 | — | — | US | disclosed |
| US-8021824-B2 | Polymer compound, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-09-20 | — | — | US | disclosed |
| US-20110223536-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-09-15 | — | — | US | disclosed |
| US-8017302-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-13 | — | — | US | disclosed |
| US-8017302-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-13 | — | — | US | disclosed |
| US-8017304-B2 | Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method | FUJIFILM CORPORATION (JP) | 2011-09-13 | — | — | US | disclosed |
| US-8017298-B2 | Method of forming patterns | FUJIFILM CORPORATION (JP) | 2011-09-13 | — | — | US | disclosed |
| US-8017298-B2 | Method of forming patterns | FUJIFILM CORPORATION (JP) | 2011-09-13 | — | — | US | disclosed |
| US-8012669-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-09-06 | — | — | US | disclosed |
| US-20110212391-A1 | POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-01 | — | — | US | disclosed |
| US-20110207331-A1 | Resist underlayer film forming composition for lithography, containing aromatic fused ring-containing resin | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2011-08-25 | — | — | US | disclosed |
| US-8003294-B2 | disulfoneamines as acid generators capable of generating an acid upon irradiation with actinic ray or radiation; use in making semiconductors, printed circuits; improve Post Exposure Bake temperature dependency and exposure latitude | FUJIFILM CORPORATION (JP) | 2011-08-23 | — | — | US | disclosed |
| US-7998654-B2 | Positive resist composition and pattern-forming method | FUJIFILM CORPORATION (JP) | 2011-08-16 | — | — | US | disclosed |
| US-7998655-B2 | Method of forming patterns | FUJIFILM CORPORATION (JP) | 2011-08-16 | — | — | US | disclosed |
| US-7993811-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-08-09 | — | — | US | disclosed |
| US-7993811-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-08-09 | — | — | US | disclosed |
| US-20110189607-A1 | NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-08-04 | — | — | US | disclosed |
| US-20110189607-A1 | NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-08-04 | — | — | US | disclosed |
| US-20110189609-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-08-04 | — | — | US | disclosed |
| US-7989138-B2 | Fluorine-containing compound, resist composition for immersion exposure, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-08-02 | — | — | US | disclosed |
| US-20110183263-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-07-28 | — | — | US | disclosed |
| US-20110183262-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-28 | — | — | US | disclosed |
| US-20110183258-A1 | POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND FOR USE IN THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-07-28 | — | — | US | disclosed |
| US-7985534-B2 | Pattern forming method | FUJIFILM CORPORATION (JP) | 2011-07-26 | — | — | US | disclosed |
| US-7985528-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-26 | — | — | US | disclosed |
| US-7981589-B2 | Fluorinated monomer, fluorinated polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-19 | — | — | US | disclosed |
| US-20110165512-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-07-07 | — | — | US | disclosed |
| US-20110159433-A1 | PHOTOSENSITIVE COMPOSITION, PATTERN-FORMING METHOD USING THE COMPOSITION, AND RESIN USED IN THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-06-30 | — | — | US | disclosed |
| US-7968276-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-06-28 | — | — | US | disclosed |
| US-20110151381-A1 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-06-23 | — | — | US | disclosed |
| US-7964331-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-06-21 | — | — | US | disclosed |
| US-20110143280-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2011-06-16 | — | — | US | disclosed |
| US-7960091-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-06-14 | — | — | US | disclosed |
| US-7960494-B2 | Copolymer for semiconductor lithography and process for producing the same | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2011-06-14 | — | — | US | disclosed |
| US-7960087-B2 | Positive photosensitive composition and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2011-06-14 | — | — | US | disclosed |
| US-20110136062-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-06-09 | — | — | US | disclosed |
| US-7955777-B2 | Compound, acid generator, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-06-07 | — | — | US | disclosed |
| US-7955780-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2011-06-07 | — | — | US | disclosed |
| US-7951524-B2 | Exposing photoresist polymer, photoacid generator and solvent to actinic radiation through a patterned photomask; development; immersion lithography; 1,1,1,3,3,3-hexafluoroisopropyl methacrylate-1-ethyl-cyclopentyl methacrylate copolymer; semiconductors | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-05-31 | — | — | US | disclosed |
| US-20110117497-A1 | ACRYLATE DERIVATIVE, HALOESTER DERIVATIVE, POLYMER COMPOUND AND PHOTORESIST COMPOSITION | KURARAY CO., LTD. (JP) | 2011-05-19 | — | — | US | disclosed |
| US-20110117499-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-05-19 | — | — | US | disclosed |
| US-20110117491-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-05-19 | — | — | US | disclosed |
| US-20110111343-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-05-12 | — | — | US | disclosed |
| US-7939243-B2 | Resin, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-05-10 | — | — | US | disclosed |
| US-20110102528-A1 | COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND INKJET RECORDING METHOD | FUJIFILM CORPORATION (JP) | 2011-05-05 | — | — | US | disclosed |
| US-20110098500-A1 | Polymerizable Fluorine-Containing Compound | CENTRAL GLASS COMPANY, LIMITED (JP) | 2011-04-28 | — | — | US | disclosed |
| US-20110097667-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-04-28 | — | — | US | disclosed |
| US-20110091809-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-04-21 | — | — | US | disclosed |
| US-20110089385-A1 | COMPOSITION FOR OPTICAL MATERIALS | FUJIFILM CORPORATION (JP) | 2011-04-21 | — | — | US | disclosed |
| US-7927780-B2 | Resist composition, method of forming resist pattern, novel compound and method of producing the same, and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-04-19 | — | — | US | disclosed |
| US-7923196-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2011-04-12 | — | — | US | disclosed |
| US-7923196-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2011-04-12 | — | — | US | disclosed |
| US-7923199-B2 | Using a sulfonium acid generator that forms a fluorine-substituted sulfonic acid compound; improved in the exposure latitude, pitch dependency and line edge roughness and enhanced in the sensitivity and resolution at the exposure with EUV light | FUJIFILM CORPORATION (JP) | 2011-04-12 | — | — | US | disclosed |
| US-20110081612-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH | FUJIFILM CORPORATION (JP) | 2011-04-07 | — | — | US | disclosed |
| US-7919651-B2 | Positive resist composition, method of forming resist pattern, polymeric compound, and compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-04-05 | — | — | US | disclosed |
| US-7919227-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-04-05 | — | — | US | disclosed |
| US-20110076625-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2011-03-31 | — | — | US | disclosed |
| US-20110076615-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-03-31 | — | — | US | disclosed |
| US-7914967-B2 | Fluorine-containing compound, resist composition for immersion exposure, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-03-29 | — | — | US | disclosed |
| US-7910285-B2 | Positive resist composition for immersion exposure and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-03-22 | — | — | US | disclosed |
| US-20110057987-A1 | INK SET AND IMAGE FORMING METHOD | FUJIFILM CORPORATION (JP) | 2011-03-10 | — | — | US | disclosed |
| US-20110045413-A1 | RESIST COMPOSITION FOR NEGATIVE TONE DEVELOPMENT AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-02-24 | — | — | US | disclosed |
| US-20110039207-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-02-17 | — | — | US | disclosed |
| US-7887994-B2 | Photoresist composition, coating method thereof, method of forming organic film pattern using the same and display device fabricated thereby | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-02-15 | — | — | US | disclosed |
| US-7887990-B2 | Fluorine-containing compound, fluorine-containing polymer, postive-type resist composition, and patterning process using same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2011-02-15 | — | — | US | disclosed |
| US-7887988-B2 | Acid generator; irradiating with actinic radiation | FUJIFILM CORPORATION (JP) | 2011-02-15 | — | — | US | disclosed |
| US-20110033799-A1 | PATTERN FORMING PROCESS, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND RESIST-MODIFYING COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-02-10 | — | — | US | disclosed |
| US-20110033799-A1 | PATTERN FORMING PROCESS, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND RESIST-MODIFYING COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-02-10 | — | — | US | disclosed |
| US-20110027716-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-02-03 | — | — | US | disclosed |
| US-7875746-B2 | Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2011-01-25 | — | — | US | disclosed |
| US-20110014570-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-01-20 | — | — | US | disclosed |
| US-20110014571-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-01-20 | — | — | US | disclosed |
| US-7871752-B2 | Lactone-containing compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-18 | — | — | US | disclosed |
| US-20110008735-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-13 | — | — | US | disclosed |
| US-20110008731-A1 | ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-01-13 | — | — | US | disclosed |
| US-20110008728-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-01-13 | — | — | US | disclosed |
| US-7868199-B2 | fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning | EUDYNA DEVICES INC. (JP) | 2011-01-11 | — | — | US | disclosed |
| US-20110003247-A1 | PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-06 | — | — | US | disclosed |
| US-20110003247-A1 | PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-06 | — | — | US | disclosed |
| US-20100330507-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION TO BE USED IN THE PATTERN FORMING METHOD, NEGATIVE DEVELOPING SOLUTION TO BE USED IN THE PATTERN FORMING METHOD AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT TO BE USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2010-12-30 | — | — | US | disclosed |
| US-7858288-B2 | Positive resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-12-28 | — | — | US | disclosed |
| US-20100323305-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2010-12-23 | — | — | US | disclosed |
| US-7851140-B2 | Resist composition for negative tone development and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2010-12-14 | — | — | US | disclosed |
| US-7851130-B2 | Photosensitive composition, compound for use in the photosensitive composition, and pattern-forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2010-12-14 | — | — | US | disclosed |
| US-20100310991-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-12-09 | — | — | US | disclosed |
| US-20100304299-A1 | CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. | 2010-12-02 | — | — | US | disclosed |
| US-20100304300-A1 | PHOTOSENSITIVE COMPOSITION AND PATTERN-FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-12-02 | — | — | US | disclosed |
| US-7842452-B2 | Pattern forming method | FUJIFILM CORPORATION (JP) | 2010-11-30 | — | — | US | disclosed |
| US-20100297554-A1 | RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-11-25 | — | — | US | disclosed |
| US-20100297563-A1 | RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-11-25 | — | — | US | disclosed |
| US-20100297564-A1 | POLYMERIZABLE FLUORINE-CONTAINING MONOMER, FLUORINE-CONTAINING POLYMER AND METHOD OF FORMING RESIST PATTERN | DAIKIN INDUSTRIES, LTD. (JP) | 2010-11-25 | — | — | US | disclosed |
| US-20100297564-A1 | POLYMERIZABLE FLUORINE-CONTAINING MONOMER, FLUORINE-CONTAINING POLYMER AND METHOD OF FORMING RESIST PATTERN | DAIKIN INDUSTRIES, LTD. (JP) | 2010-11-25 | — | — | US | disclosed |
| US-7833694-B2 | Lactone-containing compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-11-16 | — | — | US | disclosed |
| US-20100285405-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-11-11 | — | — | US | disclosed |
| US-7824836-B2 | Photosensitive composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2010-11-02 | — | — | US | disclosed |
| US-7812194-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2010-10-12 | — | — | US | disclosed |
| US-20100255419-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-10-07 | — | — | US | disclosed |
| US-20100255418-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH | FUJIFILM CORPORATION (JP) | 2010-10-07 | — | — | US | disclosed |
| US-7807329-B2 | Photosensitive composition and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2010-10-05 | — | — | US | disclosed |
| US-20100248143-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-09-30 | — | — | US | disclosed |
| US-20100248146-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-09-30 | — | — | US | disclosed |
| US-20100248146-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-09-30 | — | — | US | disclosed |
| US-20100248149-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-09-30 | — | — | US | disclosed |
| US-20100248136-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-09-30 | — | — | US | disclosed |
| US-20100248148-A1 | POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-09-30 | — | — | US | disclosed |
| US-20100248133-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD (JP) | 2010-09-30 | — | — | US | disclosed |
| US-7803511-B2 | resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits | FUJIFILM CORPORATION (JP) | 2010-09-28 | — | — | US | disclosed |
| US-20100239965-A1 | COLORED CURABLE COMPOSITION, COLOR FILTER, AND METHOD FOR PRODUCING COLOR FILTER | FUJIFILM CORPORATION (JP) | 2010-09-23 | — | — | US | disclosed |
| US-20100239984-A1 | PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2010-09-23 | — | — | US | disclosed |
| US-20100239978-A1 | PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD AND RESIST FILM USING THE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-09-23 | — | — | US | disclosed |
| US-7799506-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2010-09-21 | — | — | US | disclosed |
| US-7799505-B2 | Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2010-09-21 | — | — | US | disclosed |
| US-20100233629-A1 | PHOTOSENSITIVE COMPOSTION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-09-16 | — | — | US | disclosed |
| US-20100233617-A1 | PHOTOSENSITIVE COMPOSITION, PATTERN FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION AND COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-09-16 | — | — | US | disclosed |
| US-7794916-B2 | Positive photosensitive composition, polymer compound used for the positive photosensitive composition, production method of the polymer compound, and pattern forming method using the positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2010-09-14 | — | — | US | disclosed |
| US-7790351-B2 | Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent | FUJIFILM CORPORATION (JP) | 2010-09-07 | — | — | US | disclosed |
| US-7785767-B2 | photoresist films suitable for immersion exposure, comprising non-aromatic olefin polymers, acid generators, solvents and acrylic polymers or vinyl ether polymers, having good followability for water, improved profile and pattern collapse | FUJIFILM CORPORATION (JP) | 2010-08-31 | — | — | US | disclosed |
| US-20100216072-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION AND RESIN FOR USE IN THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-08-26 | — | — | US | disclosed |
| US-RE41580-E1 | Lactone-containing compounds, polymers, resist compositions, and patterning method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-08-24 | — | — | US | disclosed |
| US-20100209849-A1 | PATTERN FORMING PROCESS AND RESIST-MODIFYING COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-08-19 | — | — | US | disclosed |
| US-20100209848-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-08-19 | — | — | US | disclosed |
| US-20100209827-A1 | NOVEL SULFONATE AND ITS DERIVATIVE, PHOTOSENSITIVE ACID GENERATOR, AND RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-08-19 | — | — | US | disclosed |
| US-7776511-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-08-17 | — | — | US | disclosed |
| US-7776510-B2 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-08-17 | — | — | US | disclosed |
| US-7776512-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2010-08-17 | — | — | US | disclosed |
| US-20100203451-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-08-12 | — | — | US | disclosed |
| US-20100203445-A1 | NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-08-12 | — | — | US | disclosed |
| US-7771913-B2 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-08-10 | — | — | US | disclosed |
| US-7771912-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2010-08-10 | — | — | US | disclosed |
| US-7771914-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-08-10 | — | — | US | disclosed |
| US-7767379-B2 | Polymer compound, positive resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-08-03 | — | — | US | disclosed |
| US-20100190106-A1 | RESIST COMPOSITION FOR NEGATIVE TONE DEVELOPMENT AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-07-29 | — | — | US | disclosed |
| US-20100183978-A1 | SURFACE-TREATING AGENT FOR PATTERN FORMATION AND PATTERN FORMING METHOD USING THE TREATING AGENT | FUJIFILM CORPORATION (JP) | 2010-07-22 | — | — | US | disclosed |
| US-20100183975-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND RESIN | FUJIFILM CORPORATION (JP) | 2010-07-22 | — | — | US | disclosed |
| US-20100183979-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-07-22 | — | — | US | disclosed |
| US-20100183980-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-07-22 | — | — | US | disclosed |
| US-7759045-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-07-20 | — | — | US | disclosed |
| US-7749679-B2 | Photosensitive composition, pattern-forming method using the photosensitive composition and compounds used in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2010-07-06 | — | — | US | disclosed |
| US-20100167201-A1 | RESIST COMPOSITION FOR NEGATIVE TONE DEVELOPMENT AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-07-01 | — | — | US | disclosed |
| US-20100168358-A1 | FLUORINE-CONTAINING COMPOUND AND POLYMERIC COMPOUND | DAITO CHEMIX CORPORATION (JP) | 2010-07-01 | — | — | US | disclosed |
| US-7745098-B2 | Polymer compound, positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-06-29 | — | — | US | disclosed |
| US-7745097-B2 | Compound, manufacturing method thereof, acid generator, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-06-29 | — | — | US | disclosed |
| US-20100159389-A1 | RESIN, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7741009-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-06-22 | — | — | US | disclosed |
| US-20100143830-A1 | SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-10 | — | — | US | disclosed |
| US-20100143842-A1 | METHOD FOR PRODUCING A COPOLYMER SOLUTION WITH A UNIFORM CONCENTRATION FOR SEMICONDUCTOR LITHOGRAPHY | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2010-06-10 | — | — | US | disclosed |
| US-20100136485-A1 | ACETAL COMPOUNDS AND THEIR PREPARATION, POLYMERS, RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-03 | — | — | US | disclosed |
| US-20100136479-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-06-03 | — | — | US | disclosed |
| US-7727704-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-01 | — | — | US | disclosed |
| US-20100129738-A1 | POSITIVE RESIST COMPOSITION AND PATTERING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-05-27 | — | — | US | disclosed |
| US-20100124718-A1 | POLYMERIC COMPOUND, POSITIVE RESIST COMPOSITION, AND METHOD OF FORMING RESITS PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-05-20 | — | — | US | disclosed |
| US-7718344-B2 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2010-05-18 | — | — | US | disclosed |
| US-7718342-B2 | Polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-05-18 | — | — | US | disclosed |
| US-20100121077-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-05-13 | — | — | US | disclosed |
| US-7713679-B2 | Resist composition, method of forming resist pattern, novel compound, and acid generator | TOKYO OHKA KOGYO CO., LTD. | 2010-05-11 | — | — | US | disclosed |
| US-20100112477-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2010-05-06 | — | — | US | disclosed |
| US-20100104973-A1 | COMPOUND, ACID GENERATOR, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. | 2010-04-29 | — | — | US | disclosed |
| US-20100104974-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2010-04-29 | — | — | US | disclosed |
| US-20100099042-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-22 | — | — | US | disclosed |
| US-20100099042-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-22 | — | — | US | disclosed |
| US-7700260-B2 | Pattern forming method | FUJIFILM CORPORATION (JP) | 2010-04-20 | — | — | US | disclosed |
| US-7700261-B2 | Positive photosensitive composition and a pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2010-04-20 | — | — | US | disclosed |
| US-7695891-B2 | Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2010-04-13 | — | — | US | disclosed |
| US-7695892-B2 | Resist composition and pattern-forming method using same | FUJIFILM CORPORATION (JP) | 2010-04-13 | — | — | US | disclosed |
| US-7691560-B2 | Resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2010-04-06 | — | — | US | disclosed |
| US-7691561-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-06 | — | — | US | disclosed |
| US-7691558-B2 | Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2010-04-06 | — | — | US | disclosed |
| US-20100081080-A1 | POLYMER COMPOUND, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-04-01 | — | — | US | disclosed |
| US-7687222-B2 | Polymerizable ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-30 | — | — | US | disclosed |
| US-20100075249-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-03-25 | — | — | US | disclosed |
| US-7682772-B2 | Resist composition, method of forming resist pattern, novel compound, and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-03-23 | — | — | US | disclosed |
| US-20100068661-A1 | PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2010-03-18 | — | — | US | disclosed |
| US-20100069590-A1 | COMPOUND AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-03-18 | — | — | US | disclosed |
| US-7678530-B2 | Lactone-containing compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-16 | — | — | US | disclosed |
| US-20100062366-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-11 | — | — | US | disclosed |
| US-20100062373-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-11 | — | — | US | disclosed |
| US-20100062374-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-11 | — | — | US | disclosed |
| US-20100062372-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-11 | — | — | US | disclosed |
| US-20100062371-A1 | Copolymer and composition for semiconductor lithography and process for producing the copolymer | MARUZEN PETROCHEMICAL CO., LTD (JP) | 2010-03-11 | — | — | US | disclosed |
| US-20100055608-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-04 | — | — | US | disclosed |
| US-7670751-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-02 | — | — | US | disclosed |
| US-20100047724-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-02-25 | — | — | US | disclosed |
| US-20100047710-A1 | COPOLYMER FOR IMMERSION LITHOGRAPHY AND COMPOSITIONS | MARUZEN PETROCHEMICAL CO., LTD (JP) | 2010-02-25 | — | — | US | disclosed |
| US-7667050-B2 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-02-23 | — | — | US | disclosed |
| US-7666574-B2 | Positive resist composition and pattern forming method | FUJIFILM CORPORATION (JP) | 2010-02-23 | — | — | US | disclosed |
| US-20100040970-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-02-18 | — | — | US | disclosed |
| US-20100040972-A1 | PATTERN FORMING METHOD, AND RESIST COMPOSITION, DEVELOPER AND RINSING SOLUTION USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2010-02-18 | — | — | US | disclosed |
| US-20100040963-A1 | COLOR FILTER AND PRODUCTION METHOD THEREOF, AND SOLID-STATE IMAGE SENSOR USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-02-18 | — | — | US | disclosed |
| US-20100040971-A1 | PATTERN FORMING METHOD, AND RESIST COMPOSITION, DEVELOPER AND RINSING SOLUTION USED IN THE PATTERN FORMING METHOD | FUJIFILM Corporaion (JP) | 2010-02-18 | — | — | US | disclosed |
| US-20100040975-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-02-18 | — | — | US | disclosed |
| US-20100028803-A1 | SURFACE TREATING AGENT FOR RESIST PATTERN FORMATION, RESIST COMPOSITION, METHOD OF TREATING SURFACE OF RESIST PATTERN THEREWITH AND METHOD OF FORMING RESIST PATTERN | FUJIFILM CORPORATION (JP) | 2010-02-04 | — | — | US | disclosed |
| US-20100028804-A1 | RESIST COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH | FUJIFILM CORPORATION (JP) | 2010-02-04 | — | — | US | disclosed |
| US-20100022090-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY, CONTAINING AROMATIC FUSED RING-CONTAINING RESIN | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2010-01-28 | — | — | US | disclosed |
| US-20100015554-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-01-21 | — | — | US | disclosed |
| US-20100015555-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NOVEL COMPOUND AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-01-21 | — | — | US | disclosed |
| US-7648817-B2 | Resin decomposition by acid; increase solubility of alkaline developer | FUJIFILM CORPORATION (JP) | 2010-01-19 | — | — | US | disclosed |
| US-20100009291-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-01-14 | — | — | US | disclosed |
| US-20100009288-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2010-01-14 | — | — | US | disclosed |
| US-7645557-B2 | Positive resist composition for immersion exposure and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2010-01-12 | — | — | US | disclosed |
| US-7642034-B2 | Photoresists; (meth)acrylate fluoropolymer which is insoluble in water, dissolvable in aqueous alkaline solution, and immiscible with resist films so that it enables pattern formation by the immersion lithography | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-01-05 | — | — | US | disclosed |
| US-20090325102-A1 | PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2009-12-31 | — | — | US | disclosed |
| US-20090325103-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2009-12-31 | — | — | US | disclosed |
| US-7638260-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-12-29 | — | — | US | disclosed |
| US-20090317743-A1 | Resist composition for immersion exposure, method of forming resist pattern, and flourine-containing polymeric compound | TOKYO OHKA KOGYO CO., LTD. | 2009-12-24 | — | — | US | disclosed |
| US-20090317741-A1 | COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-12-24 | — | — | US | disclosed |
| US-7635554-B2 | Positive resist composition and pattern forming method | FUJIFILM CORPORATION (JP) | 2009-12-22 | — | — | US | disclosed |
| US-20090311627-A1 | Resist composition for immersion exposure and method of forming resist pattern using the same | TOKYO OHKA KOGYO CO., LTD. | 2009-12-17 | — | — | US | disclosed |
| US-20090312573-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND, AND COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-12-17 | — | — | US | disclosed |
| US-20090306328-A1 | COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND PROCESS FOR PRODUCING THE SAME | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2009-12-10 | — | — | US | disclosed |
| US-7629107-B2 | Positive photosensitive composition, polymer compounds for use in the positive photosensitive composition, manufacturing method of the polymer compounds, compounds for use in the manufacture of the polymer compounds, and pattern-forming method using the positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2009-12-08 | — | — | US | disclosed |
| US-20090297980-A1 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. | 2009-12-03 | — | — | US | disclosed |
| US-7625690-B2 | Acid generator; exposure to actinic radiation | FUJIFILM CORPORATION (JP) | 2009-12-01 | — | — | US | disclosed |
| US-7625689-B2 | better line edge roughness in excimer laser lithography; supramolecule ester useful in photoresists e.g. pentaerythritol, tetrakis(3-(methoxymethyloxycarbonyl)cyclohexanecarboxylate) aka PECHOM and other adamantanyl and norbornyl derivatives | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-12-01 | — | — | US | disclosed |
| US-7622242-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-24 | — | — | US | disclosed |
| US-20090286179-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-11-19 | — | — | US | disclosed |
| US-7618765-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-17 | — | — | US | disclosed |
| US-7618764-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-17 | — | — | US | disclosed |
| US-20090280438-A1 | METHOD OF FORMING PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-11-12 | — | — | US | disclosed |
| US-20090280440-A1 | SURFACE TREATING AGENT FOR RESIST-PATTERN, AND PATTERN-FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2009-11-12 | — | — | US | disclosed |
| US-20090273740-A1 | OPTICAL COMPENSATORY FILM, POLARIZING PLATE, AND LIQUID CRYSTAL DISPLAY DEVICE | FUJIFILM CORPORATION (JP) | 2009-11-05 | — | — | US | disclosed |
| US-20090274978-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-05 | — | — | US | disclosed |
| US-20090274978-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-05 | — | — | US | disclosed |
| US-20090274975-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH | FUJIFILM CORPORATION (JP) | 2009-11-05 | — | — | US | disclosed |
| US-20090274984-A1 | CARBOXYL-CONTAINING LACTONE COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-05 | — | — | US | disclosed |
| US-7611820-B2 | Positive resist composition and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2009-11-03 | — | — | US | disclosed |
| US-7611821-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-11-03 | — | — | US | disclosed |
| US-20090269696-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-10-29 | — | — | US | disclosed |
| US-20090269696-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-10-29 | — | — | US | disclosed |
| US-20090269701-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-10-29 | — | — | US | disclosed |
| US-7604920-B2 | Positive resist composition, method of forming resist pattern, polymeric compound, and compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-10-20 | — | — | US | disclosed |
| US-7598016-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-10-06 | — | — | US | disclosed |
| US-20090246649-A1 | GREEN CURABLE COMPOSITION, COLOR FILTER AND METHOD OF PRODUCING SAME | FUJIFILM CORPORATION (JP) | 2009-10-01 | — | — | US | disclosed |
| US-20090246695-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD USING THE SAME, POLYMERIZABLE COMPOUND AND POLYMER COMPOUND OBTAINED BY POLYMERIZING THE POLYMERIZABLE COMPOUND | FUJIFILM CORPORATION (JP) | 2009-10-01 | — | — | US | disclosed |
| US-20090246694-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-10-01 | — | — | US | disclosed |
| US-20090246694-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-10-01 | — | — | US | disclosed |
| US-20090239179-A1 | HYDROXYL-CONTAINING MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-09-24 | — | — | US | disclosed |
| US-20090239176-A1 | RESIN FOR HYDROPHOBITIZING RESIST SURFACE, METHOD FOR MANUFACTURING THE RESIN, AND POSITIVE RESIST COMPOSITION CONTAINING THE RESIN | FUJIFILM CORPORATION (JP) | 2009-09-24 | — | — | US | disclosed |
| US-7592118-B2 | Addition polymer ; insoluble in alkali developer ; acid generator; microlithography, resolution sensitivity, accuracy pattern profile | FUJIFILM CORPORATION (JP) | 2009-09-22 | — | — | US | disclosed |
| US-20090233223-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-09-17 | — | — | US | disclosed |
| US-20090233242-A1 | LACTONE-CONTAINING COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-09-17 | — | — | US | disclosed |
| US-20090226842-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-09-10 | — | — | US | disclosed |
| US-20090214982-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-08-27 | — | — | US | disclosed |
| US-20090208871-A1 | NOVEL COMPOUND AND METHOD OF PRODUCING SAME, ACID GENERATOR, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-08-20 | — | — | US | disclosed |
| US-20090208873-A1 | POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-20 | — | — | US | disclosed |
| US-20090208867-A1 | Resist Composition, Resist Protective Coating Composition, and Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-20 | — | — | US | disclosed |
| US-7576223-B2 | Polymer of a (meth)acryloyloxy)ethoxycarbonyl)sulfonium sulfonate, e.g., 1-[2-(2-methylacryloyloxy)ethoxycarbonyl]tetrahydrothiophenium perfluorobutanesulfonate; used a an acid generator in excimer laser lithography; stable fine patterns without collapse and improved line edge roughness. | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-08-18 | — | — | US | disclosed |
| US-20090197204-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-08-06 | — | — | US | disclosed |
| US-20090197197-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-08-06 | — | — | US | disclosed |
| US-20090197200-A1 | Resist top coat composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-06 | — | — | US | disclosed |
| US-7569326-B2 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-04 | — | — | US | disclosed |
| US-20090186300-A1 | RESIST COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING COPOLYMER | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| US-20090186297-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| US-20090186297-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| US-20090186298-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| US-20090186298-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| US-20090186296-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| US-20090186296-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| US-20090181325-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-07-16 | — | — | US | disclosed |
| US-20090181323-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-07-16 | — | — | US | disclosed |
| US-20090162788-A1 | NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-06-25 | — | — | US | disclosed |
| US-20090162787-A1 | NOVEL COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-06-25 | — | — | US | disclosed |
| US-7550250-B2 | Resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid, a photoacid generator, methacrylic resins having hydrolysable ester groups and solvent; profiles; pattern collapse; immersion exposure; ARF lasers | FUJIFILM CORPORATION (JP) | 2009-06-23 | — | — | US | disclosed |
| US-20090155713-A1 | RESIST COMPOSITION AND PROCESS FOR PRODUCING SAME | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-06-18 | — | — | US | disclosed |
| US-20090148791-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2009-06-11 | — | — | US | disclosed |
| US-20090142699-A1 | FLUORINE-CONTAINING COMPOUND, RESIST COMPOSITION FOR IMMERSION EXPOSURE, AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-06-04 | — | — | US | disclosed |
| US-7541133-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-06-02 | — | — | US | disclosed |
| US-7541131-B2 | Resist composition, compound for use in the resist composition and pattern forming method using the resist composition | FUJIFILM CORPORATION (JP) | 2009-06-02 | — | — | US | disclosed |
| US-20090136878-A1 | TOPCOAT COMPOSITION, ALKALI DEVELOPER-SOLUBLE TOPCOAT FILM USING THE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-05-28 | — | — | US | disclosed |
| US-20090136870-A1 | Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent | FUJIFILM CORPORATION (JP) | 2009-05-28 | — | — | US | disclosed |
| US-7537880-B2 | Polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-05-26 | — | — | US | disclosed |
| US-20090130597-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-05-21 | — | — | US | disclosed |
| US-20090123880-A1 | PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2009-05-14 | — | — | US | disclosed |
| US-7531287-B2 | Suitable to liquid immersion exposure capable of suppressing the formation of development defects and scums, with preferably less leaching of resist ingredients to the liquid immersion solution upon pattern formation by liquid immersion exposure | FUJIFILM CORPORATION (JP) | 2009-05-12 | — | — | US | disclosed |
| US-20090117490-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKAKOGYO CO., LTD. (JP) | 2009-05-07 | — | — | US | disclosed |
| US-7527911-B2 | Photosensitive composition, pattern-forming method using the photosensitive composition and compounds used in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2009-05-05 | — | — | US | disclosed |
| US-7524609-B2 | Photo sensitive composition, pattern-forming method using the photosensitive composition and compound for use in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2009-04-28 | — | — | US | disclosed |
| US-20090104563-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-04-23 | — | — | US | disclosed |
| US-20090098485-A1 | photoresist films suitable for immersion exposure, comprising non-aromatic olefin polymers, acid generators, solvents and acrylic polymers or vinyl ether polymers, having good followability for water, improved profile and pattern collapse | FUJIFILM CORPORATION (JP) | 2009-04-16 | — | — | US | disclosed |
| US-20090098484-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-04-16 | — | — | US | disclosed |
| US-7514204-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-04-07 | — | — | US | disclosed |
| US-20090087784-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-02 | — | — | US | disclosed |
| US-20090087776-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-02 | — | — | US | disclosed |
| US-7510822-B2 | Stimulation sensitive composition and compound | FUJIFILM CORPORATION (JP) | 2009-03-31 | — | — | US | disclosed |
| US-20090081588-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-03-26 | — | — | US | disclosed |
| US-20090081581-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION AND A PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-03-26 | — | — | US | disclosed |
| US-20090075202-A1 | PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION, AND METHOD OF PATTERN FORMATION WITH THE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2009-03-19 | — | — | US | disclosed |
| US-20090075204-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD (JP) | 2009-03-19 | — | — | US | disclosed |
| US-7504194-B2 | Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent | FUJIFILM CORPORATION (JP) | 2009-03-17 | — | — | US | disclosed |
| US-20090068590-A1 | POLYMER COMPOUND, POSITIVE RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-03-12 | — | — | US | disclosed |
| US-20090068591-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-03-12 | — | — | US | disclosed |
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | PROXIMAL SYSTEMS CORPORATION | 2009-03-05 | — | — | US | disclosed |
| US-20090061356-A1 | POLYMER COMPOUND, POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-03-05 | — | — | US | disclosed |
| US-20090053626-A1 | COLORED PHOTOSENSITIVE COMPOSITION, COLOR FILTER, AND METHOD FOR MANUFACTURING COLOR FILTER | FUJIFILM CORPORATION (JP) | 2009-02-26 | — | — | US | disclosed |
| US-20090053650-A1 | RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-26 | — | — | US | disclosed |
| US-7494759-B2 | Positive resist compositions and process for the formation of resist patterns with the same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-24 | — | — | US | disclosed |
| US-7494762-B2 | Positive resist composition for immersion lithography and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-24 | — | — | US | disclosed |
| US-20090047602-A1 | FLUORINE-CONTAINING COMPOUND, RESIST COMPOSITION FOR IMMERSION EXPOSURE, AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-19 | — | — | US | disclosed |
| US-7491485-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-17 | — | — | US | disclosed |
| US-20090042130-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO. LTD (JP) | 2009-02-12 | — | — | US | disclosed |
| US-20090042131-A1 | acrylate ester homo- or co-polymer increased solubility in an alkali developing solution under action of acid and an acid-generator, having an acid dissociable, dissolution inhibiting group | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-12 | — | — | US | disclosed |
| US-20090042147-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2009-02-12 | — | — | US | disclosed |
| US-20090042132-A1 | RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-12 | — | — | US | disclosed |
| US-7488568-B2 | Resist composition, method of forming resist pattern, compound and acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-10 | — | — | US | disclosed |
| US-20090035699-A1 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-02-05 | — | — | US | disclosed |
| US-20090035692-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING MEHTOD | FUJIFILM CORPORATION (JP) | 2009-02-05 | — | — | US | disclosed |
| US-7482112-B2 | Pattern forming method | FUJIFILM CORPORATION (JP) | 2009-01-27 | — | — | US | disclosed |
| US-20090023096-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2009-01-22 | — | — | US | disclosed |
| US-20090023097-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-22 | — | — | US | disclosed |
| US-20090023095-A1 | NOVEL COMPOUND, MANUFACTURING METHOD THEREOF, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING A RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-22 | — | — | US | disclosed |
| US-20090017400-A1 | PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2009-01-15 | — | — | US | disclosed |
| US-20090011366-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION TO BE USED IN THE PATTERN FORMING METHOD, NEGATIVE DEVELOPING SOLUTION TO BE USED IN THE PATTERN FORMING METHOD AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT TO BE USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2009-01-08 | — | — | US | disclosed |
| US-20090011365-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-01-08 | — | — | US | disclosed |
| US-20090011362-A1 | PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2009-01-08 | — | — | US | disclosed |
| US-20090004601-A1 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-01-01 | — | — | US | disclosed |
| US-20080318171-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2008-12-25 | — | — | US | disclosed |
| US-20080318171-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2008-12-25 | — | — | US | disclosed |
| US-20080311507-A1 | Fluorine-Containing Compound, Fluorine-Containing Polymer, Postive-Type Resist Composition, And Patterning Process Using Same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080311522-A1 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-7465529-B2 | Radiation sensitive material and method for forming pattern | FUJITSU LIMITED (JP) | 2008-12-16 | — | — | US | disclosed |
| US-20080305433-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME | FUJIFILM CORPORATION (JP) | 2008-12-11 | — | — | US | disclosed |
| US-20080305432-A1 | POSITIVE RESIST COMPOSITION AND PATTERN-FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-12-11 | — | — | US | disclosed |
| US-20080305429-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-12-11 | — | — | US | disclosed |
| US-7462440-B2 | Lithographic printing plate precursor and lithographic printing method using the same | FUJIFILM CORPORATION (JP) | 2008-12-09 | — | — | US | disclosed |
| US-20080292988-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD (JP) | 2008-11-27 | — | — | US | disclosed |
| US-20080292989-A1 | POSITIVE WORKING PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-11-27 | — | — | US | disclosed |
| US-7449573-B2 | Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition | FUJIFILM CORPORATION (JP) | 2008-11-11 | — | — | US | disclosed |
| US-20080274421-A1 | PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080269506-A1 | Chemical amplification type resist composition | YAMADA AIRI | 2008-10-30 | — | — | US | disclosed |
| US-20080268370-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-10-30 | — | — | US | disclosed |
| US-20080268376-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-30 | — | — | US | disclosed |
| US-7442485-B2 | Lithographic process involving on press development | FUJIFILM CORPORATION (JP) | 2008-10-28 | — | — | US | disclosed |
| US-20080261150-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-23 | — | — | US | disclosed |
| US-20080254386-A1 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-10-16 | — | — | US | disclosed |
| US-7435527-B2 | Mixture of acid generator and resin insoluble in alkaline developer and another acid decomposable compound | FUJIFILM CORPORATION (JP) | 2008-10-14 | — | — | US | disclosed |
| US-7435526-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2008-10-14 | — | — | US | disclosed |
| US-20080248422-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080248421-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080248425-A1 | Adjust solubility of alkali developer using acid; acid generator; actinic radiation | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080248419-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080248420-A1 | POSITIVE RESIST COMPOSITION AND PATTERN-FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080241737-A1 | RESIST COMPOSITION AND PATTERN-FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080241743-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080241746-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080241736-A1 | Immersion lithography; copolymer containing ammonium salt of carboxylic acid and fluorine monomer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080241749-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080241740-A1 | Support with photosensitive layer; reduce contact angle of water drops | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| EP-1975712-A2 | Positive resist composition and pattern forming method using the same | FUJIFILM Corporation (JP) | 2008-10-01 | — | — | EP | disclosed |
| US-20080227025-A1 | Localized on resist film; peak area of a high molecular weight; flowability of immersion liquid in patterning by exposure; prevention of coating and development defects; resin has perfluoroalkyl, fluorinated alcohol, alkylsilyl structure, cyclic siloxane, sulfonimido and/or bis(carbonyl)methylene groups | FUJIFILM CORPORATION (JP) | 2008-09-18 | — | — | US | disclosed |
| US-20080220371-A1 | PHOTOSENSITIVE COMPOSITION, COMPOUND USED FOR PHOTOSENSITIVE COMPOSITION AND PATTERN-FORMING METHOD USING PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-09-11 | — | — | US | disclosed |
| US-20080220370-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-09-11 | — | — | US | disclosed |
| US-20080213549-A1 | PHOTORESIST COMPOSITION, COATING METHOD THEREOF, METHOD OF FORMING ORGANIC FILM PATTERN USING THE SAME AND DISPLAY DEVICE FABRICATED THEREBY | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-09-04 | — | — | US | disclosed |
| US-20080206669-A1 | POSITIVE WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-08-28 | — | — | US | disclosed |
| US-20080206660-A1 | COLORED PHOTOSENSITIVE COMPOSITION, COLOR FILTER, AND METHOD FOR MAKING THE COLOR FILTER | FUJIFILM CORPORATION (JP) | 2008-08-28 | — | — | US | disclosed |
| US-20080206668-A1 | NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-08-28 | — | — | US | disclosed |
| US-20080199804-A1 | Including free radical binder polymer containing functional group having dipole moment of 3.8 debye; laser computer controlled direct plate making without alkali development; sensitivity, printing durability | FUJIFILM CORPORATION (JP) | 2008-08-21 | — | — | US | disclosed |
| US-20080193879-A1 | SELF-TOPCOATING PHOTORESIST FOR PHOTOLITHOGRAPHY | JSR MICRO INC. | 2008-08-14 | — | — | US | disclosed |
| US-20080187863-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUND USED FOR THE POSITIVE PHOTOSENSITIVE COMPOSITION, PRODUCTION METHOD OF THE POLYMER COMPOUND, AND PATTERN FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-08-07 | — | — | US | disclosed |
| US-7396899-B2 | Chemical amplification type resist composition | SUMITOMO CHEMICAL CO., LTD. (JP) | 2008-07-08 | — | — | US | disclosed |
| US-20080153030-A1 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-06-26 | — | — | US | disclosed |
| US-20080138742-A1 | PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-06-12 | — | — | US | disclosed |
| US-20080124652-A1 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-29 | — | — | US | disclosed |
| US-20080124653-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-29 | — | — | US | disclosed |
| US-20080118860-A1 | Polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-22 | — | — | US | disclosed |
| US-20080118863-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-22 | — | — | US | disclosed |
| US-7368544-B2 | Polymerizable composition and planographic printing plate precursor using the same | FUJIFILM CORPORATION (JP) | 2008-05-06 | — | — | US | disclosed |
| US-20080102407-A1 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080096134-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-24 | — | — | US | disclosed |
| US-20080096131-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-24 | — | — | US | disclosed |
| US-20080090173-A1 | POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-17 | — | — | US | disclosed |
| US-20080090172-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-04-17 | — | — | US | disclosed |
| US-20080085464-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUNDS FOR USE IN THE POSITIVE PHOTOSENSITIVE COMPOSITION, MANUFACTURING METHOD OF THE POLYMER COMPOUNDS, COMPOUNDS FOR USE IN THE MANUFACTURE OF THE POLYMER COMPOUNDS, AND PATTERN-FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080086014-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080081282-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20080081288-A1 | PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20080081290-A1 | RESIST COMPOSITION, RESIN FOR USE IN THE RESIST COMPOSITION, COMPOUND FOR USE IN THE SYNTHESIS OF THE RESIN, AND PATTERN-FORMING METHOD USING THE RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-7344821-B2 | Positive resist composition for use with electron beam, EUV light or X ray, and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2008-03-18 | — | — | US | disclosed |
| US-7341817-B2 | Photosensitive composition, compound for use in the photosensitive composition, and pattern forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2008-03-11 | — | — | US | disclosed |
| US-7335454-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2008-02-26 | — | — | US | disclosed |
| US-20080038561-A1 | Coating Composition, Optical Film, Antireflective, Film, Polarizing Plate, And Display Device Using The Same | FUJIFILM CORPORATION (JP) | 2008-02-14 | — | — | US | disclosed |
| US-20080026331-A1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| US-7323286-B2 | Photosensitive composition, compound used in the same, and patterning method using the same | FUJIFILM CORPORATION (JP) | 2008-01-29 | — | — | US | disclosed |
| US-20080008961-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008959-A1 | Resin comprising monomers of cyclopentyl- or cyclohexyl (meth)acrylate; hydroxyadamantyl (meth)acrylate; 3,8-epoxy-6-oxabicyclo[3.2.1]octyl (meth)acrylat;, and/or fluoroalkyl (meth)acrylate; ArF lithography; resolution; forms a pattern with high rectangularity | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008960-A1 | Mixture of an adamantane acrylic ester resin which becomes soluble in alkaline developer under action of an acid and sulfonium salt acid generator; microlithography with advantages of resolution, pattern density dependence and mask fidelity; use in precise microfabrication | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008962-A1 | Polymerizable ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-10 | — | — | US | disclosed |
| US-7306891-B2 | Recording layer containing a water-insoluble and alkali-soluble resin and an infrared absorbent, and an organic polymer layer with an arithmetic mean roughness Ra of 0.05 to 0.40 mu m on a face of the plate opposite to the recording layer; long-chain alkyl group-containing polymer matting agent | FUJIFILM CORPORATION (JP) | 2007-12-11 | — | — | US | disclosed |
| US-7303852-B2 | Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-04 | — | — | US | disclosed |
| US-20070269741-A1 | Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2007-11-22 | — | — | US | disclosed |
| US-20070231738-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| US-20070231741-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| US-20070224539-A1 | Resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2007-09-27 | — | — | US | disclosed |
| US-20070224538-A1 | Positive Resist Compositions and Process for the Formation of Resist Patterns With the Same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-09-27 | — | — | US | disclosed |
| US-7273690-B2 | Positive resist composition for immersion exposure and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2007-09-25 | — | — | US | disclosed |
| US-20070218406-A1 | Acid generator; exposure to actinic radiation | FUJIFILM CORPORATION (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070218407-A1 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070212641-A1 | Lithographic printing plate precursor and method for preparation of lithographic printing plate | FUJIFILM CORPORATION (JP) | 2007-09-13 | — | — | US | disclosed |
| US-20070212645-A1 | Photo sensitive composition, pattern-forming method using the photosensitive composition and compound for use in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-09-13 | — | — | US | disclosed |
| US-20070196766-A1 | Photosensitive composition, pattern-forming method using the photosensitive composition and compounds used in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-08-23 | — | — | US | disclosed |
| US-7255971-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2007-08-14 | — | — | US | disclosed |
| US-20070178405-A1 | Positive resist composition and method of pattern formation with the same | FUJI PHOTO FILM CO., LTD. | 2007-08-02 | — | — | US | disclosed |
| US-20070179309-A1 | fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-02 | — | — | US | disclosed |
| US-20070178407-A1 | Polymer, resist protective coating material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-08-02 | — | — | US | disclosed |
| US-20070172769-A1 | Pattern forming method | FUJIFILM CORPORATION (JP) | 2007-07-26 | — | — | US | disclosed |
| US-20070172768-A1 | Pattern forming method | FUJIFILM CORPORATION (JP) | 2007-07-26 | — | — | US | disclosed |
| US-20070172761-A1 | Positive photosensitive composition and method of forming pattern using the same | FUJIFILM CORPORATION (JP) | 2007-07-26 | — | — | US | disclosed |
| US-20070160929-A1 | photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography | SHIN-ETSU CHEMICAL CO., LTD. | 2007-07-12 | — | — | US | disclosed |
| US-7241551-B2 | Positive-working resist composition | FUJIFILM CORPORATION (JP) | 2007-07-10 | — | — | US | disclosed |
| US-20070148594-A1 | Polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-06-28 | — | — | US | disclosed |
| US-20070148592-A1 | Photosensitive composition, pattern-forming method using the photosensitive composition and compounds used in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-06-28 | — | — | US | disclosed |
| US-20070148595-A1 | Resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer increases under an action of an acid, a photoacid generator, methacrylic resins having hydrolysable ester groups and solvent; profiles; pattern collapse; immersion exposure; ARF lasers | FUJIFILM CORPORATION (JP) | 2007-06-28 | — | — | US | disclosed |
| US-7235343-B2 | Photoacid generators, chemically amplified resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-06-26 | — | — | US | disclosed |
| US-7235341-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2007-06-26 | — | — | US | disclosed |
| US-20070141474-A1 | Copolymer with phosphoryl group and molded articles of same | EBARA CORPORATION (JP) | 2007-06-21 | — | — | US | disclosed |
| US-20070141512-A1 | Photosensitive composition, pattern-forming method using the photosensitve composition and compound in the photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-06-21 | — | — | US | disclosed |
| US-7232639-B2 | Monomer having fluorine-containing acetal or ketal structure, polymer thereof, and chemical-amplification-type resist composition as well as process for formation of pattern with use of the same | NEC CORPORATION (JP) | 2007-06-19 | — | — | US | disclosed |
| US-20070134588-A1 | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2007-06-14 | — | — | US | disclosed |
| US-20070134589-A1 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2007-06-14 | — | — | US | disclosed |
| US-20070134590-A1 | Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent | FUJIFILM CORPORATION. (JP) | 2007-06-14 | — | — | US | disclosed |
| US-20070122736-A1 | RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO., LTD. | 2007-05-31 | — | — | US | disclosed |
| US-20070123674-A1 | Chemical amplification type resist composition | YAMADA AIRI | 2007-05-31 | — | — | US | disclosed |
| US-20070122741-A1 | Resist protective coating material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-31 | — | — | US | disclosed |
| US-7214467-B2 | Photosensitive resin composition | FUJIFILM CORPORATION (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7214733-B2 | Positive type resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7211367-B2 | Photo acid generator, chemical amplification resist material | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-01 | — | — | US | disclosed |
| US-20070082289-A1 | Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition | FUJI PHOTO FILM CO., LTD. | 2007-04-12 | — | — | US | disclosed |
| US-7202015-B2 | Positive photoresist composition and pattern making method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-04-10 | — | — | US | disclosed |
| US-7202014-B2 | Stimulus-sensitive composition, compound and pattern formation method using the stimulation-sensitive composition | FUJIFILM CORPORATION (JP) | 2007-04-10 | — | — | US | disclosed |
| US-20070077518-A1 | Recording layer containing a water-insoluble and alkali-soluble resin and an infrared absorbent, and an organic polymer layer with an arithmetic mean roughness Ra of 0.05 to 0.40 mu m on a face of the plate opposite to the recording layer; long-chain alkyl group-containing polymer matting agent | FUJI PHOTO FILM CO., LTD. | 2007-04-05 | — | — | US | disclosed |
| US-20070065753-A1 | Positive resist composition for immersion exposure and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-22 | — | — | US | disclosed |
| US-20070059639-A1 | Positive resist composition and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-15 | — | — | US | disclosed |
| US-7189492-B2 | Photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-20070042290-A1 | resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits | FUJI PHOTO FILM CO., LTD. | 2007-02-22 | — | — | US | disclosed |
| US-7179580-B2 | Radiation sensitive material and method for forming pattern | FUJITSU LIMITED (JP) | 2007-02-20 | — | — | US | disclosed |
| US-20070037090-A1 | Copolymer of di-tert-butyl, di-tetrahydropyranyl or di-oxocyclohexyl itaconate and adamantyl, norbornanyl, perhydroanthracenyl or perhydrodimethanonaphthyl (meth)acrylate and a photo-acid initiator; good transparency and etching resistance, high sensitivity, and little peeling. | FUJITSU LIMITED | 2007-02-15 | — | — | US | disclosed |
| US-20070026344-A1 | Infrared-sensitive planographic printing plate precursor | FUJI PHOTO FILM CO., LTD. | 2007-02-01 | — | — | US | disclosed |
| US-7163776-B2 | Positive-working resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-16 | — | — | US | disclosed |
| US-7160666-B2 | Photosensitive resin composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-09 | — | — | US | disclosed |
| US-7160669-B2 | Chemical amplification type resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-01-09 | — | — | US | disclosed |
| US-20070003871-A1 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. | 2007-01-04 | — | — | US | disclosed |
| US-20070003871-A1 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. | 2007-01-04 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (50 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20120271020-A1 | METHOD FOR PRODUCING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY CONTAINING REDUCED AMOUNT OF METAL IMPURITIES, AND METHOD FOR PURIFYING POLYMERIZATION INITIATOR FOR PRODUCTION OF COPOLYMER | ORAI1, STOM, SORT1 | DGAT1 3930/4885CA1 396/4885CA7 252/4885 |
| US-20160255839-A1 | IMPROVING SHELF LIFE AND COLOR PROFILE OF RESIN COMPOSITIONS WITH SILVER NANOPARTICLES | MPO, RNGTT, GDA | DGAT1 1763/4885CA1 2040/4885CA7 1018/4885 |
| US-20080220371-A1 | PHOTOSENSITIVE COMPOSITION, COMPOUND USED FOR PHOTOSENSITIVE COMPOSITION AND PATTERN-FORMING METHOD USING PHOTOSENSITIVE COMPOSITION | RARA, RARB, RARG | DGAT1 2319/4885CA1 755/4885CA7 152/4885 |
| US-20180113382-A1 | SALT, ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | RER1, FRG1, C1R | DGAT1 724/4885CA1 62/4885CA7 370/4885 |
| US-20160062233-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | XDH, HAX1, MLX | DGAT1 2450/4885CA1 71/4885CA7 483/4885 |
| US-20170371241-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | RB1, CHD1, SMARCA1 | DGAT1 3626/4885CA1 1951/4885CA7 1810/4885 |
| US-20100255418-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH | RER1, NOC2L, RAD51 | DGAT1 2557/4885CA1 1301/4885CA7 2274/4885 |
| US-20110102528-A1 | COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND INKJET RECORDING METHOD | ARFGAP1, FRG1, RHOA | DGAT1 853/4885CA1 112/4885CA7 131/4885 |
| US-20160145186-A1 | NON-IONIC COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | AFF1, AFF2, RER1 | DGAT1 628/4885CA1 2160/4885CA7 3213/4885 |
| US-20120071638-A1 | Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography | FRG1, H1-10, POLL | DGAT1 2929/4885CA1 15/4885CA7 423/4885 |
| US-20170015710-A1 | CYCLIC PEPTIDE ANALOGS AND CONJUGATES THEREOF | VIP, NGLY1, GRPR | DGAT1 4027/4885CA1 514/4885CA7 1307/4885 |
| US-20110098500-A1 | Polymerizable Fluorine-Containing Compound | FRG1, AFF1, H1-2 | DGAT1 2242/4885CA1 710/4885CA7 1948/4885 |
| US-11709425-B2 | Resist composition and method of forming resist pattern | RER1, RRS1, RXFP4 | DGAT1 1998/4885CA1 1166/4885CA7 2355/4885 |
| US-20080311522-A1 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | GNG2, ACAD9, SCO2 | DGAT1 4039/4885CA1 54/4885CA7 46/4885 |
| US-11693313-B2 | Resist composition and method of forming resist pattern | C1R, C1S, C9 | DGAT1 1689/4885CA1 3682/4885CA7 2774/4885 |
| US-20160244400-A1 | COMPOUND, RESIN AND PHOTORESIST COMPOSITION | C1R, KISS1R, C1S | DGAT1 484/4885CA1 1352/4885CA7 2156/4885 |
| US-20100121077-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | RER1, ABCC1, SLC11A2 | DGAT1 1613/4885CA1 306/4885CA7 1088/4885 |
| US-20150338735-A1 | SALT, ACID GENERATOR, PHOTORESIST COMPOSITION AND PROCESS OF PRODUCING PHOTORESIST PATTERN | CBR1, CBR3, C1R | DGAT1 1268/4885CA1 911/4885CA7 304/4885 |
| US-20160131971-A1 | COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | RER1, RXRA, C1R | DGAT1 455/4885CA1 408/4885CA7 861/4885 |
| US-20090162787-A1 | NOVEL COMPOUND, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | RER1, ASIC1, ABCC1 | DGAT1 2065/4885CA1 180/4885CA7 1342/4885 |
| US-20130115554-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND | C1R, SLC11A2, C9 | DGAT1 3170/4885CA1 541/4885CA7 745/4885 |
| US-20090312573-A1 | POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND, AND COMPOUND | ABCC1, SLC11A2, C9 | DGAT1 1337/4885CA1 317/4885CA7 558/4885 |
| US-20120164580-A1 | NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | RER1, GLRA1, ASIC1 | DGAT1 1451/4885CA1 17/4885CA7 576/4885 |
| US-20160083341-A1 | METHOD FOR PRODUCING a-SUBSTITUTED CYSTEINE OR SALT THEREOF OR SYNTHETIC INTERMEDIATE OF a-SUBSTITUTED CYSTEINE | MGMT, GSTA1, CBS | DGAT1 917/4885CA1 683/4885CA7 123/4885 |
| US-20100069590-A1 | COMPOUND AND POLYMERIC COMPOUND | AFF1, F12, AFF4 | DGAT1 708/4885CA1 1421/4885CA7 1136/4885 |
| US-20160052859-A1 | COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | RER1, C1R, RFC2 | DGAT1 1225/4885CA1 3410/4885CA7 2770/4885 |
| US-20110250539-A1 | FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-0, FRG1, H1-3 | DGAT1 1837/4885CA1 1974/4885CA7 3600/4885 |
| US-20150248052-A1 | PHOTORESIST COMPOSITION, COMPOUND AND PROCESS OF PRODUCING PHOTORESIST PATTERN | RER1, HRH4, H1-4 | DGAT1 2036/4885CA1 1229/4885CA7 2082/4885 |
| US-20110008731-A1 | ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION | RER1, XRN2, RXRA | DGAT1 2333/4885CA1 435/4885CA7 359/4885 |
| US-20110159433-A1 | PHOTOSENSITIVE COMPOSITION, PATTERN-FORMING METHOD USING THE COMPOSITION, AND RESIN USED IN THE COMPOSITION | SUN2, LCP1, PHYKPL | DGAT1 2636/4885CA1 685/4885CA7 595/4885 |
| US-20160279251-A1 | RANDOM COPOLYMER THERAPEUTIC AGENT CARRIERS AND ASSEMBLIES THEREOF | POLI, POLM, POLA1 | DGAT1 3743/4885CA1 151/4885CA7 545/4885 |
| US-20160237190-A1 | COMPOUND, RESIN AND PHOTORESIST COMPOSITION | HAX1, F11, RXRA | DGAT1 1488/4885CA1 1533/4885CA7 2410/4885 |
| US-11820735-B2 | Salt, acid generator, resist composition and method for producing resist pattern | RER1, LPAR1, TLR7 | DGAT1 2233/4885CA1 914/4885CA7 72/4885 |
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | RER1, CRY1, CYP21A2 | DGAT1 1357/4885CA1 296/4885CA7 210/4885 |
| US-20160130212-A1 | COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | C1R, C9, RER1 | DGAT1 610/4885CA1 1476/4885CA7 2040/4885 |
| US-20160070167-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND COMPOUND | RER1, TERB1, RXRA | DGAT1 1369/4885CA1 3385/4885CA7 2546/4885 |
| US-20110089385-A1 | COMPOSITION FOR OPTICAL MATERIALS | ITGA1, PIEZO1, RPS4X | DGAT1 4483/4885CA1 2024/4885CA7 1765/4885 |
| US-20090246694-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | ASIC1, HAO2, HRH3 | DGAT1 1211/4885CA1 119/4885CA7 217/4885 |
| US-20180009775-A1 | LATENT ACIDS AND THEIR USE | LTA, C1S, C9 | DGAT1 1221/4885CA1 183/4885CA7 40/4885 |
| US-20110151381-A1 | FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | AFF1, H1-0, FRG1 | DGAT1 929/4885CA1 1502/4885CA7 2914/4885 |
| US-20100099042-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ARSA, ACSL3, ASH2L | DGAT1 3372/4885CA1 2670/4885CA7 1183/4885 |
| US-20160130210-A1 | COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | AFF1, AFF2, RER1 | DGAT1 752/4885CA1 2171/4885CA7 2899/4885 |
| US-20120270155-A1 | COMPOUND, POLYMERIC COMPOUND, ACID GENERATOR, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN | ASIC1, FGFR1, FGF1 | DGAT1 1602/4885CA1 107/4885CA7 798/4885 |
| US-20160238930-A1 | HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | H1-3, H1-0, H1-2 | DGAT1 3633/4885CA1 3147/4885CA7 2751/4885 |
| US-20230161250-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | RIMKLA, GAR1, PCCA | DGAT1 773/4885CA1 122/4885CA7 261/4885 |
| US-20120015299-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | RER1, ASIC1, ABCC1 | DGAT1 767/4885CA1 123/4885CA7 668/4885 |
| US-20150241769-A1 | PHOTORESIST COMPOSITION, COMPOUND AND PROCESS OF PRODUCING PHOTORESIST PATTERN | PSMB10, PUF60, RARA | DGAT1 1317/4885CA1 1400/4885CA7 490/4885 |
| US-20090239179-A1 | HYDROXYL-CONTAINING MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | RAD51, REV1, H1-0 | DGAT1 2296/4885CA1 1836/4885CA7 3515/4885 |
| US-20110229832-A1 | PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD | RER1, RARA, RARG | DGAT1 449/4885CA1 483/4885CA7 816/4885 |
| US-20110287362-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR | RER1, ASIC1, SCO2 | DGAT1 1965/4885CA1 11/4885CA7 219/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.