Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PTGS2 | P35354 | 5/20 | 0.53 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.53 |
| ▸ | HDAC6 | Q9UBN7 | 1/20 | 0.53 |
| ▸ | PTGS1 | P23219 | 2/20 | 0.50 |
| ▸ | EGFR | P00533 | 2/20 | 0.50 |
| ▸ | PLOD2 | O00469 | 1/20 | 0.46 |
| ▸ | PLOD3 | O60568 | 1/20 | 0.46 |
| ▸ | PLOD1 | Q02809 | 1/20 | 0.46 |
| ▸ | LMNA | P02545 | 2/20 | 0.46 |
| ▸ | THRB | P10828 | 1/20 | 0.46 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.46 |
| ▸ | MEN1 | O00255 | 1/20 | 0.45 |
| ▸ | TSHR | P16473 | 1/20 | 0.45 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.45 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.45 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.44 |
| ▸ | ROCK2 | O75116 | 1/20 | 0.44 |
| ▸ | ROCK1 | Q13464 | 1/20 | 0.44 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.44 |
| ▸ | NPC1 | O15118 | 1/20 | 0.44 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL108479 | 0.84 | PTGS2 (0.60) | PTGS2HDAC1HDAC6PTGS1EGFR | |
| SCHEMBL11864560 | 0.76 | HDAC1 (0.66) | PTGS2HDAC1HDAC6PTGS1EGFR | |
| SCHEMBL18158124 | 0.74 | PTGS2 (0.54) | PTGS2HDAC1HDAC6PTGS1LMNA | |
| SCHEMBL1820805 | 0.73 | HDAC1 (0.66) | PTGS2HDAC1HDAC6PTGS1EGFR | |
| SCHEMBL24747018 | 0.71 | CA1 (0.47) | HDAC1HDAC6CA1CA2MMP1 | |
| SCHEMBL628398 | 0.71 | HDAC1 (0.62) | HDAC1HDAC6PLOD2PLOD3PLOD1 | |
| Nicoxamat SCHEMBL29824802 | 0.71 | HDAC1 (0.77) | PTGS2HDAC1HDAC6PTGS1PLOD2 | |
| SCHEMBL30646263 | 0.70 | CA1 (0.46) | HDAC1HDAC6CA1CA2MMP1 | |
| Nicoxamat SCHEMBL93839 | 0.70 | HDAC1 (1.00) | PTGS2HDAC1HDAC6PTGS1PLOD2 | |
| Hydrochloric Acid SCHEMBL6828319 | 0.70 | HDAC1 (0.61) | PTGS2HDAC1HDAC6PLOD2PLOD3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 46 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8877969-B2 | Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2014-11-04 | — | — | US | disclosed |
| US-8877969-B2 | Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition | FUJIFILM CORPORATION (JP) | 2014-11-04 | — | — | US | disclosed |
| US-8785104-B2 | Resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2014-07-22 | — | — | US | disclosed |
| US-8785104-B2 | Resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2014-07-22 | — | — | US | disclosed |
| US-8182975-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-05-22 | — | — | US | disclosed |
| US-8182975-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-05-22 | — | — | US | disclosed |
| US-8124310-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-02-28 | — | — | US | disclosed |
| US-8124310-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-02-28 | — | — | US | disclosed |
| US-8092978-B2 | Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-8092976-B2 | High resolution, reduced pattern falling, and good sensitivity and good dissolution contrast achieved even in EUV (extreme ultra violet) exposure, reduction in the line edge roughness | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| EP-2034361-A2 | Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition | Fujifilm Corporation (JP) | 2009-03-11 | — | — | EP | disclosed |
| US-20090035692-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING MEHTOD | FUJIFILM CORPORATION (JP) | 2009-02-05 | — | — | US | disclosed |
| US-20090035692-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING MEHTOD | FUJIFILM CORPORATION (JP) | 2009-02-05 | — | — | US | disclosed |
| US-20080248419-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080248419-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080081282-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20080081282-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| EP-1906248-A1 | Resist composition and pattern forming method using the same | FUJIFILM Corporation (JP) | 2008-04-02 | — | — | EP | disclosed |