SCHEMBL2735486

SCHEMBL2735486

CCC(C)(C)C(=O)OCC(O)COC(=O)c1ccc2ccccc2c1

nearest known ligand 0.60

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
▸ ADRB2 P07550 15/20 0.60
▸ ADRB1 P08588 15/20 0.60
▸ ADRB3 P13945 15/20 0.60
▸ HRH3 Q9Y5N1 2/20 0.44
▸ DRD3 P35462 1/20 0.42
▸ GABBR2 O75899 1/20 0.40
▸ GABBR1 Q9UBS5 1/20 0.40
▸ MEN1 O00255 1/20 0.40
▸ KMT2A Q03164 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17933449 0.85 HRH3 (0.53) ADRB2ADRB1ADRB3HRH3DRD3
SCHEMBL13286864 0.84 ADRB2 (0.62) ADRB2ADRB1ADRB3MEN1KMT2A
SCHEMBL11941087 0.83 MEN1 (0.50) ADRB2ADRB1ADRB3MEN1KMT2A
SCHEMBL18904537 0.82 CA12 (0.55) ADRB2ADRB1ADRB3
SCHEMBL14493141 0.82 ADRB2 (0.68) ADRB2ADRB1ADRB3HRH3DRD3
SCHEMBL19360471 0.81 HRH3 (0.50) ADRB2ADRB1ADRB3HRH3DRD3
SCHEMBL19360450 0.81 HRH3 (0.54) ADRB2ADRB1ADRB3HRH3DRD3
SCHEMBL19360454 0.81 HRH3 (0.54) ADRB2ADRB1ADRB3HRH3DRD3
SCHEMBL19360457 0.81 HRH3 (0.50) ADRB2ADRB1ADRB3HRH3DRD3
SCHEMBL2742156 0.81 ADRB2 (0.63) ADRB2ADRB1ADRB3MEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9214345-B2 Film-forming composition and ion implantation method NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-12-15 — — US disclosed
US-8088546-B2 Underlayer coating forming composition for lithography containing naphthalene ring having halogen atom NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-01-03 — — US disclosed
US-7947424-B2 urea compound substituted by hydroxyalkyl group or alkoxyalkyl group for forming urea-formaldehyde resin protective coatings; adjusting refractive index with light absorbers or crosslink-forming resin; semiconductor device, integrated circuits; light-absorption, dry etching rate NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-05-24 — — US disclosed
US-7846638-B2 Composition for forming anti-reflective coating for use in lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-12-07 — — US disclosed
US-7727902-B2 Composition for forming nitride coating film for hard mask NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-06-01 — — US disclosed
US-7425399-B2 Composition for forming anti-reflective coating for use in lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-09-16 — — US disclosed
US-20080206680-A1 Composition for forming anti-reflective coating for use in lithography NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-08-28 — — US disclosed
US-7365023-B2 Porous underlayer coating and underlayer coating forming composition for forming porous underlayer coating NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-04-29 — — US disclosed
US-20070238029-A1 Underlayer Coating Forming Composition for Lithography Containing Naphthalene Ring Having Halogen Atom NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-10-11 — — US disclosed
US-20070148557-A1 Composition for forming nitride coating film for hard mask NISSAN CHEMICAL INDUSTRIES, LT. (JP) 2007-06-28 — — US disclosed
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