Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ADRB2 | P07550 | 13/20 | 0.63 |
| ▸ | ADRB1 | P08588 | 13/20 | 0.63 |
| ▸ | ADRB3 | P13945 | 13/20 | 0.63 |
| ▸ | ESR1 | P03372 | 3/20 | 0.51 |
| ▸ | CA12 | O43570 | 1/20 | 0.51 |
| ▸ | CA1 | P00915 | 1/20 | 0.51 |
| ▸ | CA2 | P00918 | 1/20 | 0.51 |
| ▸ | CA7 | P43166 | 1/20 | 0.51 |
| ▸ | CA9 | Q16790 | 1/20 | 0.51 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.51 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.51 |
| ▸ | TSHR | P16473 | 3/20 | 0.49 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.49 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.49 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.49 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.49 |
| ▸ | KDR | P35968 | 1/20 | 0.49 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.49 |
| ▸ | LMNA | P02545 | 1/20 | 0.47 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.47 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13296228 | 0.88 | ADRB2 (0.48) | ADRB2ADRB1ADRB3 | |
| SCHEMBL13286864 | 0.87 | ADRB2 (0.62) | ADRB2ADRB1ADRB3MAPK1ALDH1A1 | |
| SCHEMBL12338029 | 0.86 | ADRB2 (0.66) | ADRB2ADRB1ADRB3ESR1CA12 | |
| SCHEMBL16639656 | 0.85 | ADRB2 (0.52) | ADRB2ADRB1ADRB3 | |
| SCHEMBL6123984 | 0.85 | ADRB2 (0.49) | ADRB2ADRB1ADRB3MEN1KMT2A | |
| SCHEMBL18904537 | 0.85 | CA12 (0.55) | ADRB2ADRB1ADRB3ESR1CA12 | |
| SCHEMBL2742139 | 0.82 | ESR1 (0.63) | ADRB2ADRB1ADRB3ESR1CA12 | |
| SCHEMBL13921988 | 0.82 | CA12 (0.45) | ADRB2ADRB1ADRB3ESR1CA12 | |
| SCHEMBL2735486 | 0.81 | ADRB2 (0.60) | ADRB2ADRB1ADRB3MEN1KMT2A | |
| SCHEMBL13296213 | 0.81 | ADRB2 (0.41) | ADRB2ADRB1ADRB3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20160209747-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2016-07-21 | — | — | US | disclosed |
| US-9034560-B2 | Negative resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2015-05-19 | — | — | US | disclosed |
| US-20140227642-A1 | NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2014-08-14 | — | — | US | disclosed |
| US-8637220-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the composition | FUJIFILM CORPORATION (JP) | 2014-01-28 | — | — | US | disclosed |
| US-8637222-B2 | Negative resist pattern forming method, developer and negative chemical-amplification resist composition used therefor, and resist pattern | FUJIFILM CORPORATION (JP) | 2014-01-28 | — | — | US | disclosed |
| US-8263307-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-09-11 | — | — | US | disclosed |
| US-20120003583-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-01-05 | — | — | US | disclosed |
| US-20110318691-A1 | RESIST COMPOSITION FOR SEMICONDUCTOR, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-12-29 | — | — | US | disclosed |
| US-20110287234-A1 | NEGATIVE RESIST PATTERN FORMING METHOD, DEVELOPER AND NEGATIVE CHEMICAL-AMPLIFICATION RESIST COMPOSITION USED THEREFOR, AND RESIST PATTERN | FUJIFILM CORPORATION (JP) | 2011-11-24 | — | — | US | disclosed |
| US-20090269701-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-10-29 | — | — | US | disclosed |
| US-7521168-B2 | Compound that has a reduction potential higher than that of diphenyl iodonium salt and generates an acid upon irradiation of an actinic ray or radiation. | FUJIFILM CORPORATION (JP) | 2009-04-21 | — | — | US | disclosed |
| US-7432034-B2 | Negative resist composition | FUJIFILM CORPORATION (JP) | 2008-10-07 | — | — | US | disclosed |
| US-20080241745-A1 | Mixture of alkali soluble polymer, crosslinking agent, acid generator ; radiation with actinic radiation; quaternary ammonium compound | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110318691-A1 | RESIST COMPOSITION FOR SEMICONDUCTOR, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | RIF1, MSI2, SLIRP | ADRB2 4054/4885ADRB1 4358/4885ADRB3 4585/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.