SCHEMBL2739904

SCHEMBL2739904

CC(=O)OCOC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.39

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.39
MEN1 O00255 3/20 0.39
KMT2A Q03164 3/20 0.39
NPSR1 Q6W5P4 2/20 0.39
HTT P42858 1/20 0.39
LMNA P02545 1/20 0.37
TSHR P16473 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
SCN9A Q15858 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL26349551 0.83 ALDH1A1 (0.40) ALDH1A1MEN1KMT2ANPSR1HTT
SCHEMBL2735076 0.82 ALDH1A1 (0.41) ALDH1A1MEN1KMT2ANPSR1HTT
SCHEMBL14648421 0.79 ALDH1A1 (0.50) ALDH1A1MEN1KMT2ANPSR1LMNA
SCHEMBL785888 0.78 ALDH1A1 (0.39) ALDH1A1MEN1KMT2ANPSR1HTT
SCHEMBL2735086 0.77 ALDH1A1 (0.37) ALDH1A1MEN1KMT2ANPSR1HTT
SCHEMBL19798443 0.77 ALDH1A1 (0.46) ALDH1A1MEN1KMT2ANPSR1HTT
SCHEMBL13385124 0.77 ALDH1A1 (0.37) ALDH1A1MEN1KMT2ANPSR1HTT
SCHEMBL13222985 0.76 ALDH1A1 (0.35) ALDH1A1MEN1KMT2ANPSR1HTT
SCHEMBL785969 0.76 ALDH1A1 (0.36) ALDH1A1MEN1KMT2ANPSR1HTT
SCHEMBL2739877 0.76 HSD11B1 (0.31) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9188857-B2 Resist polymer, process for production thereof, resist composition, and process for production of substrates with patterns thereon MITSUBISHI RAYON CO., LTD. (JP) 2015-11-17 US disclosed
US-20130252181-A1 RESIST POLYMER, PROCESS FOR PRODUCTION THEREOF, RESIST COMPOSITION, AND PROCESS FOR PRODUCTION OF SUBSTRATES WITH PATTERNS THEREON MITSUBISHI RAYON CO., LTD. (JP) 2013-09-26 US disclosed
US-8476401-B2 Resist polymer, process for production thereof, resist composition, and process for production of substrated with patterns thereon MITSUBISHI RAYON CO., LTD. (JP) 2013-07-02 US disclosed
US-8241829-B2 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer MITSUBISHI RAYON CO., LTD. (JP) 2012-08-14 US disclosed
US-8241829-B2 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer MITSUBISHI RAYON CO., LTD. (JP) 2012-08-14 US disclosed
US-8114949-B2 (Meth)acrylate, polymer and resist composition MITSUBISHI RAYON CO., LTD. (JP) 2012-02-14 US disclosed
US-8088875-B2 (Meth)acrylate, polymer and resist composition MITSUBISHI RAYON CO., LTD. (JP) 2012-01-03 US disclosed
US-8049042-B2 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer MITSUBISHI RAYON CO., LTD. (JP) 2011-11-01 US disclosed
US-20110144295-A1 RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER MITSUBISHI RAYON CO., LTD. (JP) 2011-06-16 US disclosed
US-20090226851-A1 (METH)ACRYLATE, POLYMER AND RESIST COMPOSITION MITSUBISHI RAYON CO., LTD. (JP) 2009-09-10 US disclosed
US-20090198065-A1 RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER MITSUBISHI RAYON CO., LTD. (JP) 2009-08-06 US disclosed
US-20080032241-A1 Resist Polymer, Process For Production Thereof, Resist Composition, And Process For Production Of Substrated With Patterns Thereon MITSUBISHI RAYON CO., LTD. (JP) 2008-02-07 US disclosed
US-20080032241-A1 Resist Polymer, Process For Production Thereof, Resist Composition, And Process For Production Of Substrated With Patterns Thereon MITSUBISHI RAYON CO., LTD. (JP) 2008-02-07 US disclosed
US-20080003529-A1 (Meth)Acrylate, Polymer and Resist Composition MITSUBISHI RAYON CO., LTD. (JP) 2008-01-03 US disclosed
US-20070190449-A1 Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer MITSUBISHI RAYON CO., LTD. (JP) 2007-08-16 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090198065-A1 RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER CHRM1, CHRM2, PKN2 ALDH1A1 3349/4885MEN1 2175/4885KMT2A 905/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.