Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.31 |
| ▸ | SLC6A1 | P30531 | 1/20 | 0.31 |
| ▸ | SLC6A12 | P48065 | 1/20 | 0.31 |
| ▸ | SLC6A11 | P48066 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28061122 | 1.00 | L3MBTL1 (0.31) | L3MBTL1SLC6A1SLC6A12SLC6A11 | |
| SCHEMBL28855757 | 0.81 | — | — | |
| SCHEMBL11965869 | 0.80 | L3MBTL1 (0.37) | L3MBTL1SLC6A1SLC6A12SLC6A11 | |
| SCHEMBL29061735 | 0.80 | SLC6A1 (0.31) | SLC6A1SLC6A12SLC6A11 | |
| SCHEMBL12791660 | 0.80 | SLC6A1 (0.31) | SLC6A1SLC6A12SLC6A11 | |
| SCHEMBL2740744 | 0.78 | L3MBTL1 (0.34) | L3MBTL1 | |
| SCHEMBL11945909 | 0.76 | L3MBTL1 (0.32) | L3MBTL1 | |
| SCHEMBL13925836 | 0.76 | SLC6A1 (0.34) | L3MBTL1SLC6A1SLC6A12SLC6A11 | |
| SCHEMBL10027334 | 0.75 | — | — | |
| SCHEMBL14557140 | 0.74 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 92 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20170242338-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-08-24 | — | — | US | disclosed |
| US-20170242338-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-08-24 | — | — | US | disclosed |
| US-20170176858-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2017-06-22 | — | — | US | disclosed |
| US-9612535-B2 | Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-04-04 | — | — | US | disclosed |
| US-9500951-B2 | Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-11-22 | — | — | US | disclosed |
| US-9459531-B2 | — | — | 2016-10-04 | — | — | US | disclosed |
| US-9323150-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern | FUJIFILM CORPORATION (JP) | 2016-04-26 | — | — | US | disclosed |
| US-9316908-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, photomask blank and method of forming pattern | FUJIFILM CORPORATION (JP) | 2016-04-19 | — | — | US | disclosed |
| US-9223215-B2 | Actinic ray-sensitive or radiation-sensitive composition, actinic ray-sensitive or radiation-sensitive film using the same, pattern forming method, manufacturing method of electronic device, electronic device and resin | FUJIFILM CORPORATION (JP) | 2015-12-29 | — | — | US | disclosed |
| US-20150370170-A1 | PATTERN FORMING METHOD, ELECTRON BEAM- OR EXTREME ULTRAVIOLET-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-12-24 | — | — | US | disclosed |
| US-7214465-B2 | Positive photosensitive composition | FUJIFILM CORPORATION (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7214733-B2 | Positive type resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7195856-B2 | Positive resist composition and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2007-03-27 | — | — | US | disclosed |
| US-7192681-B2 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-20 | — | — | US | disclosed |
| US-7189492-B2 | Photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-20070042291-A1 | Positive resist composition and a pattern forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-02-22 | — | — | US | disclosed |
| US-20070042291-A1 | Positive resist composition and a pattern forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-02-22 | — | — | US | disclosed |
| US-7179578-B2 | Positive resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-7179579-B2 | Radiation-sensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-6964839-B1 | Photosensitive polymer having cyclic backbone and resist composition containing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-11-15 | — | — | US | disclosed |