Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HCAR2 | Q8TDS4 | 5/20 | 0.54 |
| ▸ | LMNA | P02545 | 1/20 | 0.48 |
| ▸ | CA12 | O43570 | 4/20 | 0.45 |
| ▸ | CA9 | Q16790 | 4/20 | 0.45 |
| ▸ | AKR1B10 | O60218 | 2/20 | 0.45 |
| ▸ | AKR1B1 | P15121 | 2/20 | 0.45 |
| ▸ | CA4 | P22748 | 2/20 | 0.45 |
| ▸ | CA6 | P23280 | 2/20 | 0.45 |
| ▸ | CA5A | P35218 | 2/20 | 0.45 |
| ▸ | CA7 | P43166 | 2/20 | 0.45 |
| ▸ | CA14 | Q9ULX7 | 2/20 | 0.45 |
| ▸ | CA5B | Q9Y2D0 | 2/20 | 0.45 |
| ▸ | TTR | P02766 | 1/20 | 0.41 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.41 |
| ▸ | POLB | P06746 | 1/20 | 0.41 |
| ▸ | MAPT | P10636 | 1/20 | 0.39 |
| ▸ | CA1 | P00915 | 2/20 | 0.37 |
| ▸ | CA2 | P00918 | 2/20 | 0.37 |
| ▸ | F13A1 | P00488 | 1/20 | 0.37 |
| ▸ | TGM2 | P21980 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10182777 | 0.88 | HCAR2 (0.56) | HCAR2LMNAAKR1B10AKR1B1TTR | |
| SCHEMBL2742234 | 0.78 | HCAR2 (0.38) | HCAR2ALDH1A1MAPT | |
| SCHEMBL13713549 | 0.77 | POLB (0.41) | LMNACA12CA9CA4CA5A | |
| SCHEMBL2742228 | 0.76 | HCAR2 (0.59) | HCAR2LMNACA12CA9AKR1B10 | |
| SCHEMBL19820339 | 0.76 | CA1 (0.56) | LMNACA12CA9ALDH1A1MAPT | |
| SCHEMBL337503 | 0.76 | HCAR2 (0.89) | HCAR2LMNACA12CA9AKR1B10 | |
| SCHEMBL357565 | 0.76 | HCAR2 (0.89) | HCAR2LMNACA12CA9AKR1B10 | |
| SCHEMBL337504 | 0.76 | HCAR2 (0.89) | HCAR2LMNACA12CA9AKR1B10 | |
| SCHEMBL7617312 | 0.75 | HCAR2 (0.74) | HCAR2LMNACA12CA9AKR1B10 | |
| SCHEMBL7619848 | 0.75 | HCAR2 (0.74) | HCAR2LMNACA12CA9AKR1B10 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9235120-B2 | Negative actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, resist-coated mask blanks, resist pattern forming method, and photomask | FUJIFILM CORPORATION (JP) | 2016-01-12 | — | — | US | disclosed |
| US-9235120-B2 | Negative actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, resist-coated mask blanks, resist pattern forming method, and photomask | FUJIFILM CORPORATION (JP) | 2016-01-12 | — | — | US | disclosed |
| US-9005870-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-04-14 | — | — | US | disclosed |
| US-9005870-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-04-14 | — | — | US | disclosed |
| US-20140178806-A1 | NEGATIVE ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD, AND PHOTOMASK | FUJIFILM CORPORATION (JP) | 2014-06-26 | — | — | US | disclosed |
| US-20140178806-A1 | NEGATIVE ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD, AND PHOTOMASK | FUJIFILM CORPORATION (JP) | 2014-06-26 | — | — | US | disclosed |
| US-8637220-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the composition | FUJIFILM CORPORATION (JP) | 2014-01-28 | — | — | US | disclosed |
| US-8637220-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and resist film and pattern forming method using the composition | FUJIFILM CORPORATION (JP) | 2014-01-28 | — | — | US | disclosed |
| US-20120082939-A1 | ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE RESIN COMPOSITION, AND ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-04-05 | — | — | US | disclosed |
| US-20120082939-A1 | ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE RESIN COMPOSITION, AND ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-04-05 | — | — | US | disclosed |
| US-20120003583-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-01-05 | — | — | US | disclosed |
| US-20120003583-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-01-05 | — | — | US | disclosed |
| US-20110318693-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-12-29 | — | — | US | disclosed |
| US-20110318693-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-12-29 | — | — | US | disclosed |
| US-20110183263-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-07-28 | — | — | US | disclosed |
| US-20110183263-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-07-28 | — | — | US | disclosed |