SCHEMBL13713549

SCHEMBL13713549

O=S(=O)(O)c1c(F)c(F)c(OCc2ccccc2)c(F)c1F

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ POLB P06746 1/20 0.41
▸ MAPT P10636 1/20 0.41
▸ TDP1 Q9NUW8 1/20 0.41
▸ L3MBTL1 Q9Y468 1/20 0.41
▸ CA1 P00915 4/20 0.41
▸ CA2 P00918 4/20 0.41
▸ CA12 O43570 3/20 0.41
▸ CA7 P43166 3/20 0.41
▸ CA9 Q16790 2/20 0.41
▸ CA13 Q8N1Q1 2/20 0.41
▸ CA4 P22748 1/20 0.41
▸ CA5A P35218 1/20 0.41
▸ CA5B Q9Y2D0 1/20 0.41
▸ LMNA P02545 2/20 0.40
▸ HPGD P15428 1/20 0.40
▸ MGLL Q99685 1/20 0.40
▸ CYP1A2 P05177 1/20 0.40
▸ PTGS1 P23219 1/20 0.40
▸ SLC6A2 P23975 1/20 0.40
▸ CYP2C19 P33261 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13048694 0.84 RXRA (0.41) POLBMAPTTDP1L3MBTL1CA1
SCHEMBL2742186 0.81 TDP1 (0.42) POLBMAPTTDP1L3MBTL1CA1
SCHEMBL27020701 0.79 AR (0.43) POLBMAPTTDP1L3MBTL1CA1
SCHEMBL682266 0.78 ALDH1A1 (0.43) POLBMAPTTDP1L3MBTL1NPC1
SCHEMBL9963800 0.78 APP (0.37) POLBMAPTTDP1L3MBTL1CA1
SCHEMBL15299024 0.78 MAPT (0.35) POLBMAPTTDP1L3MBTL1CA1
SCHEMBL19820339 0.77 CA1 (0.56) MAPTTDP1L3MBTL1CA1CA2
SCHEMBL17065946 0.77 MAPT (0.50) POLBMAPTTDP1L3MBTL1LMNA
SCHEMBL2742229 0.77 HCAR2 (0.54) POLBMAPTTDP1L3MBTL1CA1
SCHEMBL14607238 0.76 ENPP2 (0.36) CA1CA2CA12CA7CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1536285-B1 Photosensitive composition, compound for use in the photosensitive composition, and pattern forming method using the photosensitive composition FUJIFILM CORP (JP) 2016-01-06 — — EP disclosed
US-7592126-B2 Positive resist composition and pattern forming method using the resist composition FUJIFILM CORPORATION (JP) 2009-09-22 — — US disclosed
US-7465528-B2 Positive-working photosensitive composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2008-12-16 — — US disclosed
US-7341817-B2 Photosensitive composition, compound for use in the photosensitive composition, and pattern forming method using the photosensitive composition FUJIFILM CORPORATION (JP) 2008-03-11 — — US disclosed
US-7273690-B2 Positive resist composition for immersion exposure and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2007-09-25 — — US disclosed
US-20070087288-A1 Positive-working photosensitive composition and pattern forming method using the same FUJIFILM CORPORATION 2007-04-19 — — US disclosed
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