SCHEMBL2742272

SCHEMBL2742272

COc1ccc([S+](c2ccccc2)c2ccccc2)c2ccccc12

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
IDO1 P14902 1/20 0.48
EP300 Q09472 1/20 0.47
KAT8 Q9H7Z6 1/20 0.47
IMPDH2 P12268 1/20 0.44
IMPDH1 P20839 1/20 0.44
NQO1 P15559 1/20 0.42
CDC25B P30305 2/20 0.41
MAPT P10636 3/20 0.40
PLK1 P53350 1/20 0.40
HPGDS O60760 1/20 0.39
CYP2C9 P11712 1/20 0.39
HIF1A Q16665 1/20 0.39
CA12 O43570 1/20 0.38
CA1 P00915 1/20 0.38
CA2 P00918 1/20 0.38
CA4 P22748 1/20 0.38
CA7 P43166 1/20 0.38
CA9 Q16790 1/20 0.38
CA14 Q9ULX7 1/20 0.38
KMT2A Q03164 2/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL4257986 0.84 IDO1 (0.36) IDO1EP300KAT8IMPDH2IMPDH1
SCHEMBL12172612 0.84 NQO1 (0.43) IDO1EP300KAT8NQO1MAPT
SCHEMBL419307 0.77 IDO1 (0.73) IDO1EP300KAT8IMPDH2IMPDH1
SCHEMBL29380721 0.77 IDO1 (0.73) IDO1EP300KAT8IMPDH2IMPDH1
SCHEMBL31005134 0.76 CA1 (0.50) MAPTCA12CA1CA2CA4
SCHEMBL2090403 0.76 CA1 (0.50) MAPTCA12CA1CA2CA4
SCHEMBL3203135 0.73 CA12 (0.48) NQO1MAPTCA12CA1CA2
SCHEMBL3182131 0.73 ACHE (0.48) NQO1MAPTCYP2C9CA12CA1
SCHEMBL3203674 0.73 CA12 (0.48) MAPTCYP2C9CA12CA1CA2
SCHEMBL12411061 0.73 IDO1 (0.47) IDO1EP300KAT8IMPDH2IMPDH1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9152047-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray-or radiation-sensitive film therefrom, method of forming pattern, process for manufacturing semiconductor device, semiconductor device and compound FUJIFILM CORPORATION (JP) 2015-10-06 US disclosed
US-9052590-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-06-09 US disclosed
US-9051403-B2 Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition FUJIFILM CORPORATION (JP) 2015-06-09 US disclosed
US-20150118628-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM, METHOD OF FORMING PATTERN, PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2015-04-30 US disclosed
US-9005870-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-04-14 US disclosed
US-20150086912-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD USING THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2015-03-26 US disclosed
US-20140349223-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY-OR RADIATION-SENSITIVE FILM THEREFROM, METHOD OF FORMING PATTERN, PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND COMPOUND FUJIFILM CORPORATION (JP) 2014-11-27 US disclosed
US-8785917-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the same FUJIFILM CORPORATION (JP) 2014-07-22 US disclosed
US-8753798-B2 Process for forming a hydrophilic coating and hydrophilic coating, and process for forming an ink jet recording head and ink jet recording head CANON KABUSHIKI KAISHA (JP) 2014-06-17 US disclosed
US-8673546-B2 Process for forming a hydrophilic coating and hydrophilic coating, and process for forming an ink jet recording head and ink jet recording head CANON KABUSHIKI KAISHA (JP) 2014-03-18 US disclosed
US-20120082939-A1 ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE RESIN COMPOSITION, AND ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-04-05 US disclosed
US-20120003583-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-01-05 US disclosed
US-20110183263-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-07-28 US disclosed
US-7914968-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2011-03-29 US disclosed
US-7858286-B2 Positive resist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2010-12-28 US disclosed
US-20100304289-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-12-02 US disclosed
US-20100233617-A1 PHOTOSENSITIVE COMPOSITION, PATTERN FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION AND COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2010-09-16 US disclosed
US-7736842-B2 Resist composition for electron beam or EUV (extreme ultraviolet) and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2010-06-15 US disclosed
US-20090098483-A1 POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHA KOGYO CO., LTD. (JP) 2009-04-16 US disclosed
US-20070269744-A1 Resist Composition for Electron Beam or Euv (Extreme Ultraviolet) and Method for Forming Resist Pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2007-11-22 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100233617-A1 PHOTOSENSITIVE COMPOSITION, PATTERN FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION AND COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION ZYX, CD79B, TERB1 IDO1 1973/4885EP300 4448/4885KAT8 1554/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.