SCHEMBL274353

SCHEMBL274353

CCO[Si](C)(OCC)O[Si](C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16724746 0.94
SCHEMBL633732 0.94
SCHEMBL211737 0.87
SCHEMBL4862588 0.86
SCHEMBL3037560 0.84
SCHEMBL2960816 0.84
SCHEMBL14346751 0.84
SCHEMBL9842019 0.84
SCHEMBL27189028 0.84
SCHEMBL3872463 0.81

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 233 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230304139-A1 METHODS FOR APPLYING DECORATIVE METAL FILMS ON POLYMERIC SURFACES VERGASON TECHNOLOGY 2023-09-28 US claimed
WO-2023183902-A1 METHODS FOR APPLYING DECORATIVE METAL FILMS ON POLYMERIC SURFACES VERGASON TECHNOLOGY, INC. (US) 2023-09-28 WO claimed
CN-107286346-A Alkane epoxide blocks the preparation method of dimethyl silicone polymer 江苏科幸新材料股份有限公司 2017-10-24 CN claimed
CN-102652355-A Wet oxidation process performed on a dielectric material formed from a flowable CVD process APPLIED MATERIALS INC 2012-08-29 CN claimed
US-20120142198-A1 WET OXIDATION PROCESS PERFORMED ON A DIELECTRIC MATERIAL FORMED FROM A FLOWABLE CVD PROCESS APPLIED MATERIALS, INC. (US) 2012-06-07 US claimed
WO-2011084223-A2 WET OXIDATION PROCESS PERFORMED ON A DIELECTRIC MATERIAL FORMED FROM A FLOWABLE CVD PROCESS APPLIED MATERIALS, INC. (US) 2011-07-14 WO claimed
US-20110151677-A1 WET OXIDATION PROCESS PERFORMED ON A DIELECTRIC MATERIAL FORMED FROM A FLOWABLE CVD PROCESS APPLIED MATERIALS, INC. 2011-06-23 US claimed
US-7704894-B1 Method of eliminating small bin defects in high throughput TEOS films NOVELLUS SYSTEMS, INC. (US) 2010-04-27 US claimed
JP-2008523165-A 2008-07-03 JP claimed
EP-1833880-A1 ULTRAVIOLET TRANSMISSIVE POLYHEDRAL SILSESQUIOXANE POLYMERS Matsushita Electric Works, Ltd. (JP) 2007-09-19 EP claimed
WO-2006062219-A1 ULTRAVIOLET TRANSMISSIVE POLYHEDRAL SILSESQUIOXANE POLYMERS MATSUSHITA ELECTRIC WORKS, LTD. (JP) 2006-06-15 WO claimed
JP-6021242-A None JP disclosed
US-12615976-B2 Methods for depositing dielectric films with increased stability APPLIED MATERIALS, INC. (US) 2026-04-28 US disclosed
US-20250308883-A1 INTEGRATING NITRIDE STRESS COMPENSATION LAYERS FOR THICK OXIDE WAFER CREATION TOKYO ELECTRON LIMITED (JP) 2025-10-02 US disclosed
US-20250283221-A1 CARRIER RING WITH TABS LAM RES CORP (US) 2025-09-11 US disclosed
US-4019997-A Silicone fluid useful as a brae fluid GENERAL ELECTRIC COMPANY (US) 1977-04-26 US disclosed
US-4005023-A Silicone fluid useful as a brake fluid GENERAL ELECTRIC COMPANY (US) 1977-01-25 US disclosed
US-3984449-A Hydrocarbonoxy-containing silicone fluids useful as hydraulic fluids GENERAL ELECTRIC COMPANY (US) 1976-10-05 US disclosed
US-3941741-A POLYSILOXANE GENERAL ELECTRIC COMPANY (US) 1976-03-02 US disclosed
US-3933726-A ACRYLIC ESTERS GENERAL ELECTRIC COMPANY (US) 1976-01-20 US disclosed