SCHEMBL2757718

SCHEMBL2757718

CCOC(C)OC1O[C@H](C2COC(C)(C)O2)[C@@H]2OC(C)(C)O[C@H]12

nearest known ligand 0.38

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
▸ CA1 P00915 2/20 0.38
▸ CA2 P00918 2/20 0.38
▸ CA9 Q16790 2/20 0.38
▸ CA12 O43570 1/20 0.32
▸ CA4 P22748 1/20 0.32
▸ CA6 P23280 1/20 0.32
▸ CA5A P35218 1/20 0.32
▸ CA7 P43166 1/20 0.32
▸ CA13 Q8N1Q1 1/20 0.32
▸ CA14 Q9ULX7 1/20 0.32
▸ CA5B Q9Y2D0 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2757724 0.89 CA1 (0.37) CA1CA2CA9CA12CA4
SCHEMBL2757722 0.88 CA1 (0.35) CA1CA2CA9
SCHEMBL2757740 0.86 CA1 (0.36) CA1CA2CA9CA12CA4
SCHEMBL2757723 0.84 CA1 (0.39) CA1CA2CA9CA12CA4
SCHEMBL2757725 0.83 CA1 (0.34) CA1CA2CA9
SCHEMBL2757741 0.83 CA1 (0.34) CA1CA2CA9
SCHEMBL2757756 0.81 CA2 (0.35) CA2
SCHEMBL2757736 0.80 CA1 (0.55) CA1CA2CA9CA12CA4
SCHEMBL2757742 0.76 CA2 (0.33) CA1CA2CA9
SCHEMBL7145333 0.76 CA2 (0.45) CA1CA2CA9CA12CA4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8541161-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same and pattern forming method FUJIFILM CORPORATION (JP) 2013-09-24 — — US disclosed
US-8541161-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same and pattern forming method FUJIFILM CORPORATION (JP) 2013-09-24 — — US disclosed
US-20120003586-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2012-01-05 — — US disclosed
US-20120003586-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2012-01-05 — — US disclosed
US-20110269071-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-11-03 — — US disclosed
US-20110269071-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-11-03 — — US disclosed
US-7255971-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-08-14 — — US disclosed
US-7214465-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2007-05-08 — — US disclosed
US-7214465-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2007-05-08 — — US disclosed
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