SCHEMBL2757742

SCHEMBL2757742

CC(OCCOC(=O)C12CC3CC(CC(C3)C1)C2)OC1O[C@H](C2COC(C)(C)O2)[C@@H]2OC(C)(C)O[C@H]12

nearest known ligand 0.35

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
▸ CA2 P00918 2/20 0.33
▸ CA1 P00915 1/20 0.33
▸ CA9 Q16790 1/20 0.33
▸ ALDH1A1 P00352 2/20 0.32
▸ PRKCA P17252 1/20 0.31
▸ NPSR1 Q6W5P4 1/20 0.30
▸ MEN1 O00255 1/20 0.30
▸ KMT2A Q03164 1/20 0.30
▸ ATM Q13315 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2757738 0.86 CA1 (0.45) CA2CA1CA9ALDH1A1PRKCA
SCHEMBL2757789 0.86 ALDH1A1 (0.31) CA2ALDH1A1
SCHEMBL2757740 0.80 CA1 (0.36) CA2CA1CA9
SCHEMBL13190879 0.80 ALDH1A1 (0.30) ALDH1A1
SCHEMBL2757726 0.79 CA1 (0.31) CA2CA1CA9
SCHEMBL2757721 0.78 CA1 (0.31) CA2CA1CA9
SCHEMBL2757725 0.77 CA1 (0.34) CA2CA1CA9
SCHEMBL2757741 0.77 CA1 (0.34) CA2CA1CA9
SCHEMBL2757722 0.77 CA1 (0.35) CA2CA1CA9
SCHEMBL2757718 0.76 CA1 (0.38) CA2CA1CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8541161-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same and pattern forming method FUJIFILM CORPORATION (JP) 2013-09-24 — — US disclosed
US-8541161-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same and pattern forming method FUJIFILM CORPORATION (JP) 2013-09-24 — — US disclosed
US-20120003586-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2012-01-05 — — US disclosed
US-20120003586-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2012-01-05 — — US disclosed
US-7255971-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-08-14 — — US disclosed
US-7255971-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-08-14 — — US disclosed
US-7214465-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2007-05-08 — — US disclosed
US-7214465-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2007-05-08 — — US disclosed
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