SCHEMBL2758520

SCHEMBL2758520

CCC(C)c1cc(CO)cc(OC)c1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.41
MAPT P10636 4/20 0.41
GAA P10253 3/20 0.41
ABCB11 O95342 1/20 0.39
DAO P14920 1/20 0.38
HPGD P15428 2/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
PTGS2 P35354 1/20 0.36
TSHR P16473 1/20 0.35
LMNA P02545 1/20 0.35
TP53 P04637 1/20 0.35
ALOX12 P18054 1/20 0.35
KDM4E B2RXH2 1/20 0.34
MEN1 O00255 1/20 0.34
POLB P06746 1/20 0.34
KMT2A Q03164 1/20 0.34
TAAR1 Q96RJ0 2/20 0.34
USP2 O75604 1/20 0.34
PKM P14618 1/20 0.34
ALOX15 P16050 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11981074 0.84 DAO (0.41) ALDH1A1MAPTABCB11DAOSMN1; SMN2
SCHEMBL10138510 0.83 ALDH1A1 (0.50) ALDH1A1MAPTGAAABCB11HPGD
SCHEMBL21135648 0.79 ALDH1A1 (0.40) ALDH1A1MAPTGAAABCB11HPGD
SCHEMBL65276 0.77 ALDH1A1 (0.58) ALDH1A1MAPTDAOPTGS2TSHR
SCHEMBL1621101 0.77 DAO (0.53) ALDH1A1MAPTDAOPTGS2GRIN2D
SCHEMBL18893300 0.77 ALDH1A1 (0.37) ALDH1A1GAAHPGDTSHRUSP2
SCHEMBL19275144 0.75 ALDH1A1 (0.40) ALDH1A1MAPTGAAABCB11HPGD
SCHEMBL28123040 0.75 ALDH1A1 (0.55) ALDH1A1MAPTDAOPTGS2TSHR
SCHEMBL8228443 0.74 DAO (0.47) ALDH1A1MAPTDAOPTGS2TSHR
SCHEMBL13317740 0.73 ALDH1A1 (0.43) ALDH1A1MAPTGAATSHRKDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160209747-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2016-07-21 US disclosed
US-9034560-B2 Negative resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2015-05-19 US disclosed
US-8968988-B2 Resist pattern forming method, resist pattern, crosslinkable negative resist composition, nanoimprint mold and photomask FUJIFILM CORPORATION (JP) 2015-03-03 US disclosed
US-8906600-B2 Resist pattern forming method, resist pattern, positive resist composition, nanoimprint mold and photomask FUJIFILM CORPORATION (JP) 2014-12-09 US disclosed
US-20140227642-A1 NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2014-08-14 US disclosed
US-8637222-B2 Negative resist pattern forming method, developer and negative chemical-amplification resist composition used therefor, and resist pattern FUJIFILM CORPORATION (JP) 2014-01-28 US disclosed
US-20130052567-A1 RESIST PATTERN FORMING METHOD, RESIST PATTERN, CROSSLINKABLE NEGATIVE RESIST COMPOSITION, NANOIMPRINT MOLD AND PHOTOMASK FUJIFILM CORPORATION (JP) 2013-02-28 US disclosed
US-20130052568-A1 RESIST PATTERN FORMING METHOD, RESIST PATTERN, POSITIVE RESIST COMPOSITION, NANOIMPRINT MOLD AND PHOTOMASK FUJIFILM CORPORATION (JP) 2013-02-28 US disclosed
US-20120003585-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-01-05 US disclosed
US-20110287234-A1 NEGATIVE RESIST PATTERN FORMING METHOD, DEVELOPER AND NEGATIVE CHEMICAL-AMPLIFICATION RESIST COMPOSITION USED THEREFOR, AND RESIST PATTERN FUJIFILM CORPORATION (JP) 2011-11-24 US disclosed