SCHEMBL2772095

SCHEMBL2772095

CCCCO[SiH](CC(C)C)OCCCC

nearest known ligand 0.35

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
ADRB2 P07550 1/20 0.35
ADRB1 P08588 1/20 0.35
ADRB3 P13945 1/20 0.35
CYP3A4 P08684 1/20 0.31
TSHR P16473 1/20 0.31
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16496809 0.89 ADRB2 (0.31) ADRB2ADRB1ADRB3
SCHEMBL2771134 0.85 HSD17B10 (0.32)
SCHEMBL16497401 0.83 DNM1 (0.31)
SCHEMBL27519111 0.76 USP2 (0.33) ADRB2ADRB1ADRB3TSHRALDH1A1
SCHEMBL1069911 0.76 ADRB2 (0.31) ADRB2ADRB1ADRB3
SCHEMBL22289366 0.76 ADRB2 (0.36) ADRB2ADRB1ADRB3
SCHEMBL29240646 0.76 ADRB2 (0.31) ADRB2ADRB1ADRB3
SCHEMBL16497101 0.74
SCHEMBL703983 0.74 ADRB2 (0.41) ADRB2ADRB1ADRB3CYP3A4TSHR
SCHEMBL706741 0.74 ADRB2 (0.41) ADRB2ADRB1ADRB3CYP3A4TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-107209303-B Far infrared ray reflective film, dispersion for forming far infrared ray reflective film, method for producing far infrared ray reflective film, far infrared ray reflective glass, and window 富士胶片株式会社 2020-07-14 CN disclosed
US-9733397-B2 Anti-reflection coat and optical device TAMRON CO., LTD. (JP) 2017-08-15 US disclosed
CN-103185905-B Antireflection film and optical element TOTATSU CORP. (JP) 2015-12-23 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-8546597-B2 Organic silane compound for forming Si-containing film by plasma CVD and method for forming Si-containing film SHIN-ETSU CHEMICAL CO., LTD (JP) 2013-10-01 US disclosed
EP-2194060-B1 Organic silane compounds for forming silicon-containing films by plasma CVD and method for forming silicon-containing films SHINETSU CHEMICAL CO (JP) 2013-07-17 EP disclosed
CN-103185905-A Anti-reflection film and optical element TAMRON KK 2013-07-03 CN disclosed
EP-2194060-A1 Organic silane compounds for forming silicon-containing films by plasma CVD and method for forming silicon-containing films Shin-Etsu Chemical Co., Ltd. (JP) 2010-06-09 EP disclosed
US-20100137626-A1 ORGANIC SILANE COMPOUND FOR FORMING SI-CONTAINING FILM BY PLASMA CVD AND METHOD FOR FORMING SI-CONTAINING FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-03 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-7005532-B2 Process of producing alkoxysilanes TOAGOSEI CO., LTD. (JP) 2006-02-28 US disclosed
US-20050020845-A1 Process of producing alkoxysilanes TOAGOSEI CO., LTD. (JP) 2005-01-27 US disclosed
EP-1428828-A1 PROCESS FOR PREPARATION OF ALKOXYSILANES TOAGOSEI CO., LTD. (JP) 2004-06-16 EP disclosed