SCHEMBL278764

SCHEMBL278764

CCCCCCCCCC(C)C(C)(c1ccc(O)cc1)c1ccc(O)cc1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 7/20 0.47
ESR2 Q92731 5/20 0.47
SLC6A2 P23975 3/20 0.44
SLC6A4 P31645 3/20 0.44
SLC6A3 Q01959 3/20 0.44
ADRA2A P08913 2/20 0.44
ADORA3 P0DMS8 2/20 0.44
TACR2 P21452 2/20 0.44
LMNA P02545 2/20 0.44
CYP3A4 P08684 2/20 0.44
HSD17B10 Q99714 2/20 0.44
ALDH1A1 P00352 2/20 0.44
KDM4E B2RXH2 1/20 0.44
SHBG P04278 1/20 0.44
TP53 P04637 1/20 0.44
HSPD1 P10809 1/20 0.44
ADRB3 P13945 1/20 0.44
HTR2C P28335 1/20 0.44
HSPE1 P61604 1/20 0.44
HIF1A Q16665 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10148035 1.00 ESR1 (0.47) ESR1ESR2SLC6A2SLC6A4SLC6A3
SCHEMBL278572 1.00 ESR1 (0.47) ESR1ESR2SLC6A2SLC6A4SLC6A3
SCHEMBL2980562 0.93 ESR1 (0.50) ESR1ESR2SLC6A2SLC6A4SLC6A3
SCHEMBL11795050 0.87 ESR1 (0.47) ESR1ESR2SLC6A2SLC6A4SLC6A3
SCHEMBL11517653 0.82 ESR1 (0.46) ESR1ESR2SLC6A2SLC6A4SLC6A3
SCHEMBL27556298 0.81 CSNK1E (0.38) HSD17B10ALDH1A1MEN1KMT2A
SCHEMBL6440889 0.80 ESR1 (0.47) ESR1ESR2SLC6A2SLC6A4SLC6A3
SCHEMBL29136222 0.79 ESR1 (0.50) ESR1ESR2SLC6A2SLC6A4SLC6A3
SCHEMBL4809781 0.78 ESR1 (0.48) ESR1ESR2SLC6A2SLC6A4SLC6A3
SCHEMBL27980865 0.78 ESR1 (0.50) ESR1ESR2SLC6A2SLC6A4SLC6A3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8133550-B2 Good breaking elongation characteristics, achievable high sensitivity and high film remaining rate, little in pattern size fluctuation at the heating time after lithographic process, capable of stable pattern formation; manufacturing a semiconductor device FUJIFILM CORPORATION (JP) 2012-03-13 US disclosed
US-20080076849-A1 POLYBENZOXAZOLE PRECURSOR, PHOTOSENSITIVE RESIN COMPOSITION USING THE SAME, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-03-27 US disclosed