SCHEMBL2793385

SCHEMBL2793385

[SiH4].c1ccc([SiH2]c2ccccc2)cc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 5/20 0.41
ACHE P22303 2/20 0.41
ALOX12 P18054 2/20 0.41
LMNA P02545 1/20 0.41
HSD17B10 Q99714 2/20 0.39
MAPT P10636 1/20 0.39
HPGD P15428 1/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
MGLL Q99685 1/20 0.39
ALDH1A1 P00352 5/20 0.38
TDP1 Q9NUW8 4/20 0.33
CA1 P00915 2/20 0.33
CA2 P00918 2/20 0.33
CA9 Q16790 2/20 0.33
MAPK1 P28482 1/20 0.33
CA12 O43570 1/20 0.33
GLA P06280 1/20 0.33
CA3 P07451 1/20 0.33
CA4 P22748 1/20 0.33
CA14 Q9ULX7 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2793388 1.00 TSHR (0.41) TSHRACHEALOX12LMNAHSD17B10
SCHEMBL28278745 0.96 TSHR (0.44) TSHRACHEALOX12LMNAHSD17B10
SCHEMBL52125 0.96 TSHR (0.44) TSHRACHEALOX12LMNAHSD17B10
Hydrochloric Acid SCHEMBL312008 0.92 TSHR (0.41) TSHRACHEALOX12LMNAHSD17B10
Fluoride SCHEMBL704196 0.92 TSHR (0.41) TSHRACHEALOX12LMNAHSD17B10
Water SCHEMBL6913191 0.92 TSHR (0.41) TSHRACHEALOX12LMNAHSD17B10
Hydrochloric Acid SCHEMBL15122374 0.92 TSHR (0.41) TSHRACHEALOX12LMNAHSD17B10
Water SCHEMBL27578972 0.92 TSHR (0.41) TSHRACHEALOX12LMNAHSD17B10
SCHEMBL3133054 0.92 TSHR (0.41) TSHRACHEALOX12LMNAHSD17B10
Ammonia Solution, Strong SCHEMBL11868999 0.92 TSHR (0.41) TSHRACHEALOX12LMNAHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7749563-B2 Two-layer film for next generation damascene barrier application with good oxidation resistance APPLIED MATERIALS, INC. (US) 2010-07-06 US disclosed
CN-100510168-C Two-layer film for next generation damascene barrier application with good oxidation resistance APPLIED MATERIALS INC (US) 2009-07-08 CN disclosed
US-7319068-B2 Method of depositing low k barrier layers APPLIED MATERIALS, INC. (US) 2008-01-15 US disclosed
US-20070042610-A1 METHOD OF DEPOSITING LOW K BARRIER LAYERS APPLIED MATERIALS, INC. 2007-02-22 US disclosed
US-7125813-B2 Method of depositing low K barrier layers APPLIED MATERIALS, INC. (US) 2006-10-24 US disclosed
US-7049249-B2 Method of improving stability in low k barrier layers APPLIED MATERIALS (US) 2006-05-23 US disclosed
CN-1714168-A Two-layer film for next generation damascene barrier application with good oxidation resistance APPLIED MATERIALS INC (US) 2005-12-28 CN disclosed
EP-1588410-A1 A METHOD OF IMPROVING STABILITY IN LOW K BARRIER LAYERS Applied Materials, Inc. (US) 2005-10-26 EP disclosed
EP-1558784-A2 TWO-LAYER FILM FOR NEXT GENERATION DAMASCENE BARRIER APPLICATION WITH GOOD OXIDATION RESISTANCE Applied Materials, Inc. (US) 2005-08-03 EP disclosed
US-20050042858-A1 Method of improving stability in low k barrier layers LI LIHUA (US) 2005-02-24 US disclosed
US-20040198070-A1 Method of depositing low K barrier layers APPLIED MATERIALS, INC. 2004-10-07 US disclosed
US-6790788-B2 Method of improving stability in low k barrier layers APPLIED MATERIALS INC. 2004-09-14 US disclosed
WO-2004064136-A1 A METHOD OF IMPROVING STABILITY IN LOW K BARRIER LAYERS APPLIED MATERIALS, INC. (US) 2004-07-29 WO disclosed
US-20040137756-A1 METHOD OF IMPROVING STABILITY IN LOW K BARRIER LAYERS APPLIED MATERIALS, INC. 2004-07-15 US disclosed
US-6759327-B2 Method of depositing low k barrier layers APPLIED MATERIALS INC. 2004-07-06 US disclosed
WO-2004033752-A2 TWO-LAYER FILM FOR NEXT GENERATION DAMASCENE BARRIER APPLICATION WITH GOOD OXIDATION RESISTANCE APPLIED MATERIALS, INC. (US) 2004-04-22 WO disclosed
US-20040067308-A1 Two-layer film for next generation damascene barrier application with good oxidation resistance APPLIED MATERIALS, INC. 2004-04-08 US disclosed
WO-2003043073-A2 A METHOD OF DEPOSITING LOW K BARRIER LAYERS APPLIED MATERIALS, INC. (US) 2003-05-22 WO disclosed
US-20030068881-A1 Method of depositing low k barrier layers APPLIED MATERIALS, INC. 2003-04-10 US disclosed