Known targets — ChEMBL curated mechanism
ABL1BMXBRAFBTKCHRNA4CHRNB2CSNK1EEGFRERBB2F10FLT1FLT3FLT4IGF1RINSRITKJAK3KDRKITOPRM1PARP1PARP2PDGFRBPIK3CDRAF1RETSLC18A2TECTXKdacAdacBdacCftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 9/20 | 0.46 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.44 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.41 |
| ▸ | TSHR | P16473 | 1/20 | 0.41 |
| ▸ | GAA | P10253 | 2/20 | 0.41 |
| ▸ | NPC1 | O15118 | 2/20 | 0.41 |
| ▸ | RAB9A | P51151 | 2/20 | 0.41 |
| ▸ | POLB | P06746 | 4/20 | 0.40 |
| ▸ | TP53 | P04637 | 1/20 | 0.40 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.39 |
| ▸ | MAPT | P10636 | 2/20 | 0.38 |
| ▸ | HTT | P42858 | 2/20 | 0.38 |
| ▸ | LMNA | P02545 | 2/20 | 0.38 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.38 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.38 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.38 |
| ▸ | PKM | P14618 | 2/20 | 0.38 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.38 |
| ▸ | ACHE | P22303 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3880042 | 0.85 | MAPT (0.54) | ALDH1A1CYP2D6TSHRGAAPOLB | |
| Cyclopentanol SCHEMBL1554394 | 0.76 | CYP2D6 (0.51) | ALDH1A1CYP2D6CYP3A4TSHRGAA | |
| SCHEMBL4824258 | 0.76 | CYP2D6 (0.51) | ALDH1A1CYP2D6CYP3A4TSHRGAA | |
| Cyclohexanone SCHEMBL669721 | 0.76 | ALDH1A1 (0.45) | ALDH1A1CYP2D6CYP3A4GAAPOLB | |
| Cyclopropane SCHEMBL2101355 | 0.75 | GAA (0.54) | ALDH1A1CYP2D6CYP3A4TSHRGAA | |
| Cyclohexane SCHEMBL27563472 | 0.75 | GAA (0.54) | ALDH1A1CYP2D6CYP3A4TSHRGAA | |
| Cyclohexanol SCHEMBL1553521 | 0.74 | ALDH1A1 (0.51) | ALDH1A1CYP2D6CYP3A4TSHRGAA | |
| SCHEMBL6963783 | 0.74 | CYP2D6 (0.50) | ALDH1A1CYP2D6CYP3A4TSHRGAA | |
| SCHEMBL30197568 | 0.73 | ALDH1A1 (0.49) | ALDH1A1CYP2D6TSHRGAAPOLB | |
| SCHEMBL2489459 | 0.73 | CYP2D6 (0.55) | ALDH1A1CYP2D6CYP3A4TSHRGAA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 68 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115044040-B | Polyimide-containing polymer, positive photosensitive resin composition, negative photosensitive resin composition, and pattern forming method | 信越化学工业株式会社 | 2024-07-02 | — | — | CN | disclosed |
| CN-111381447-B | Photosensitive resin composition, laminate, and pattern forming method | 信越化学工业株式会社 | 2024-03-08 | — | — | CN | disclosed |
| CN-111234236-B | Siloxane polymer containing isocyanuric acid and polyether skeleton, photosensitive resin composition, and pattern formation method | 信越化学工业株式会社 | 2023-03-24 | — | — | CN | disclosed |
| CN-111205463-B | Polysiloxane skeleton polymer, photosensitive resin composition, pattern forming method and manufacturing of optical semiconductor device | 信越化学工业株式会社 | 2023-02-14 | — | — | CN | disclosed |
| CN-108388082-B | Photosensitive resin composition, photosensitive dry film, photosensitive resin coating and pattern forming method | 信越化学工业株式会社（JP） | 2023-01-13 | — | — | CN | disclosed |
| CN-115044040-A | Polyimide-containing polymer, positive photosensitive resin composition, negative photosensitive resin composition, and pattern formation method | 信越化学工业株式会社 | 2022-09-13 | — | — | CN | disclosed |
| CN-115023653-A | Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, and pattern formation method | 信越化学工业株式会社 | 2022-09-06 | — | — | CN | disclosed |
| CN-114746809-A | Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, pattern forming method, and light-emitting element | 信越化学工业株式会社 | 2022-07-12 | — | — | CN | disclosed |
| CN-109422881-B | Epoxy group-containing isocyanurate-modified silicone resin, photosensitive resin composition, photosensitive dry film, laminate, and pattern formation method | 信越化学工业株式会社 | 2022-04-19 | — | — | CN | disclosed |
| CN-114253069-A | Photosensitive resin composition, pattern forming method, cured film forming method, interlayer insulating film, and surface protective film | 信越化学工业株式会社 | 2022-03-29 | — | — | CN | disclosed |
| US-7232641-B2 | Polymerizable compound, polymer, positive-resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-06-19 | — | — | US | disclosed |
| US-20070128886-A1 | Substrate, method for producing the same, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-06-07 | — | — | US | disclosed |
| EP-1788436-A1 | Rework process for photoresist film | Shin-Etsu Chemical Company, Ltd. (JP) | 2007-05-23 | — | — | EP | disclosed |
| EP-1788437-A2 | Rework process for photoresist film | Shinetsu Chemical Co., Ltd. (JP) | 2007-05-23 | — | — | EP | disclosed |
| US-20070111140-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-17 | — | — | US | disclosed |
| US-20070111134-A1 | solvent remove the first photoresist film, forming a second photoresist film over the second antireflection silicone resin film which is over the first antireflection silicone resin film; lower cost and provide an excellent resist pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-17 | — | — | US | disclosed |
| US-7189493-B2 | Polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-20050079446-A1 | Novel polymerizable compound, polymer, positive-resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-04-14 | — | — | US | disclosed |
| US-20050079440-A1 | Novel polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-04-14 | — | — | US | disclosed |
| US-6673511-B1 | PHOTORESISTS COMPRISING TERTIARY AMINES, SOLVENTS, ACID GENERATORS AND ADDITION POLYMERS HAVING ACID-LABILE GROUPS USED FOR LITHOGRAPHY AND HAVING HIGH SENSITIVITY, RESOLUTION AND CORROSION RESISTANCE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-01-06 | — | — | US | disclosed |