Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 1/20 | 0.35 |
| ▸ | CA2 | P00918 | 1/20 | 0.35 |
| ▸ | CA4 | P22748 | 1/20 | 0.35 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.34 |
| ▸ | MAPT | P10636 | 1/20 | 0.33 |
| ▸ | MCL1 | Q07820 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL2797639 | 0.95 | — | — | |
| Biphenyl SCHEMBL516027 | 0.94 | KMT2A (0.34) | CA1CA2CA4KMT2AMAPT | |
| SCHEMBL3881606 | 0.84 | CA2 (0.33) | CA1CA2CA4 | |
| SCHEMBL27764014 | 0.83 | CA1 (0.43) | CA1CA2CA4KMT2AMAPT | |
| SCHEMBL3876401 | 0.83 | CA2 (0.35) | CA1CA2 | |
| SCHEMBL822956 | 0.80 | — | — | |
| Biphenyl SCHEMBL5368712 | 0.80 | — | — | |
| Biphenyl SCHEMBL5574676 | 0.79 | CA2 (0.32) | CA1CA2 | |
| SCHEMBL3871399 | 0.78 | CA1 (0.32) | CA1CA2CA4KMT2AMAPT | |
| Trifluoromethanesulfonic Acid SCHEMBL5866306 | 0.78 | CA1 (0.38) | CA1CA2CA4KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 138 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-0745633-B1 | Si containing high molecular compound and photosensitive resin composition | NEC CORP (JP) | 2000-08-02 | — | — | EP | claimed |
| US-5723257-A | POLYVINYLSILSESQUIOXANES OR OTHER POLYSILOXANES | NEC CORPORATION (JP) | 1998-03-03 | — | — | US | claimed |
| EP-0745633-A2 | Si containing high molecular compound and photosensitive resin composition | NEC CORPORATION (JP) | 1996-12-04 | — | — | EP | claimed |
| CN-110515270-B | Photosensitive resin composition, pattern forming method, and method for manufacturing optical semiconductor device | 信越化学工业株式会社 | 2024-07-12 | — | — | CN | disclosed |
| CN-115044040-B | Polyimide-containing polymer, positive photosensitive resin composition, negative photosensitive resin composition, and pattern forming method | 信越化学工业株式会社 | 2024-07-02 | — | — | CN | disclosed |
| CN-118103774-A | Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, and pattern forming method | 信越化学工业株式会社 | 2024-05-28 | — | — | CN | disclosed |
| CN-113527101-B | Novel compound, polymer, process for producing the same, photosensitive resin composition, pattern forming process, cured film, and electronic component | 信越化学工业株式会社 | 2024-04-23 | — | — | CN | disclosed |
| CN-117794985-A | Polymer containing silicon phenylene skeleton, photosensitive resin composition, pattern forming method, and method for producing optical semiconductor element | 信越化学工业株式会社 | 2024-03-29 | — | — | CN | disclosed |
| CN-111381447-B | Photosensitive resin composition, laminate, and pattern forming method | 信越化学工业株式会社 | 2024-03-08 | — | — | CN | disclosed |
| CN-117616337-A | Film forming material for semiconductor, member forming material for semiconductor, process member forming material for semiconductor, underlayer film forming material, underlayer film, and semiconductor device | 株式会社艾迪科 | 2024-02-27 | — | — | CN | disclosed |
| CN-117501180-A | Laminate, method for producing laminate, and method for forming pattern | 信越化学工业株式会社 | 2024-02-02 | — | — | CN | disclosed |
| US-6140010-A | POLYMER WITH CROSSLINKER, PHOTOACID GENERATOR WHICH GENERATES ACID IN RESPONSE TO LIGHT WITH ACRYLIC ESTER WITH TERMINAL ACID GROUP | NEC CORPORATION (JP) | 2000-10-31 | — | — | US | disclosed |
| EP-0745633-B1 | Si containing high molecular compound and photosensitive resin composition | NEC CORP (JP) | 2000-08-02 | — | — | EP | disclosed |
| US-6074801-A | POLYMER WITH REPEATING UNITS, CROSSLINKING AND ADDING PHOTOACID GENERATOR WITH LIGHT | NEC CORPORATION (JP) | 2000-06-13 | — | — | US | disclosed |
| EP-0849634-A1 | Radiation sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1998-06-24 | — | — | EP | disclosed |
| US-5756850-A | ARGON FLUORIDE EXCIMER LASER LITHOGRAPHY WITH ACID GENERATING RESINS WITH SULFONIUM SALTS | NEC CORPORATION (JP) | 1998-05-26 | — | — | US | disclosed |
| US-5723257-A | POLYVINYLSILSESQUIOXANES OR OTHER POLYSILOXANES | NEC CORPORATION (JP) | 1998-03-03 | — | — | US | disclosed |
| US-5635332-A | MIXTURE WITH ULTRAVIOLET TRANSPARENT POLYMER HAVING GROUPS WHICH ARE UNSTABLE TO ACID | NEC CORPORATION (JP) | 1997-06-03 | — | — | US | disclosed |
| US-5585507-A | FINENESS PATTERNS | NEC CORPORATION (JP) | 1996-12-17 | — | — | US | disclosed |
| EP-0745633-A2 | Si containing high molecular compound and photosensitive resin composition | NEC CORPORATION (JP) | 1996-12-04 | — | — | EP | disclosed |