Ethylamine

Ethylamine

SCHEMBL28020362

CCN.[Zr]

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Ethylamine SCHEMBL854887 0.93
Ethylamine SCHEMBL1331327 0.93
Ethylamine SCHEMBL1793 0.93
Ethylamine SCHEMBL126107 0.86
Ethylamine SCHEMBL9536330 0.86 DNM1 (0.40)
Ethylamine SCHEMBL1048625 0.86
Ethylamine SCHEMBL9800964 0.86
Ethylamine SCHEMBL21929766 0.86
Ethylamine SCHEMBL18835208 0.86
Ethylamine SCHEMBL1331914 0.86

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114058083-B Zirconium-based magnesium hydroxide and preparation method and application thereof 江西广源化工有限责任公司 2023-06-20 CN claimed
CN-114058083-A Zirconium-based magnesium hydroxide and preparation method and application thereof 江西广源化工有限责任公司 2022-02-18 CN claimed
CN-104851791-A Method for depositing high-K gate dielectric on atomic layer on surface of graphene UNIV XI AN JIAOTONG LIVERPOOL 2015-08-19 CN claimed
CN-114058083-B Zirconium-based magnesium hydroxide and preparation method and application thereof 江西广源化工有限责任公司 2023-06-20 CN disclosed
CN-112505107-B Flexible ultrahigh-sensitivity wide-range hydrogen sensor and preparation method thereof 南京大学 2022-10-11 CN disclosed
CN-114058083-A Zirconium-based magnesium hydroxide and preparation method and application thereof 江西广源化工有限责任公司 2022-02-18 CN disclosed
CN-110062777-A Mixed catalyst system and method of use 埃克森美孚化学专利公司 2019-07-26 CN disclosed
CN-104851791-A Method for depositing high-K gate dielectric on atomic layer on surface of graphene UNIV XI AN JIAOTONG LIVERPOOL 2015-08-19 CN disclosed