Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GABRR1 | P24046 | 2/20 | 0.45 |
| ▸ | GSR | P00390 | 1/20 | 0.33 |
| ▸ | RNPEP | Q9H4A4 | 1/20 | 0.32 |
| ▸ | GRIK1 | P39086 | 5/20 | 0.32 |
| ▸ | GRIK2 | Q13002 | 5/20 | 0.32 |
| ▸ | CPB2 | Q96IY4 | 1/20 | 0.31 |
| ▸ | SLC1A3 | P43003 | 1/20 | 0.31 |
| ▸ | SLC1A2 | P43004 | 1/20 | 0.31 |
| ▸ | SLC1A1 | P43005 | 1/20 | 0.31 |
| ▸ | GABBR2 | O75899 | 1/20 | 0.30 |
| ▸ | GABBR1 | Q9UBS5 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28130520 | 0.88 | CPB2 (0.41) | GABRR1GSRRNPEPCPB2GABBR2 | |
| SCHEMBL28131142 | 0.86 | GSR (0.47) | GABRR1GSRRNPEPCPB2 | |
| SCHEMBL28131214 | 0.85 | GSR (0.46) | GABRR1GSRRNPEPCPB2 | |
| SCHEMBL28130420 | 0.85 | GSR (0.46) | GABRR1GSRRNPEPCPB2 | |
| SCHEMBL28131140 | 0.85 | GSR (0.46) | GABRR1GSRRNPEPCPB2 | |
| SCHEMBL13144525 | 0.81 | CHRM1 (0.44) | GRIK1GRIK2SLC1A3SLC1A2SLC1A1 | |
| SCHEMBL27843402 | 0.77 | DPP7 (0.38) | GABRR1GSRGRIK1GRIK2GABBR2 | |
| SCHEMBL9463182 | 0.76 | ALDH1A1 (0.31) | — | |
| SCHEMBL9463176 | 0.76 | ALDH1A1 (0.31) | — | |
| SCHEMBL27974274 | 0.76 | FFAR3 (0.35) | GRIK1GRIK2SLC1A3SLC1A2SLC1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-103503097-B | Metal oxide semiconductor electrode having porous thin film formed thereon, dye-sensitized solar cell using the same, and method for manufacturing the same | 浦项工科大学校产学协力团 | 2016-11-16 | — | — | CN | claimed |
| CN-103460396-B | DSSC comprising sheath and preparation method thereof | 浦项工科大学校产学协力团 | 2016-06-22 | — | — | CN | claimed |
| CN-103503097-B | Metal oxide semiconductor electrode having porous thin film formed thereon, dye-sensitized solar cell using the same, and method for manufacturing the same | 浦项工科大学校产学协力团 | 2016-11-16 | — | — | CN | disclosed |
| CN-103460396-B | DSSC comprising sheath and preparation method thereof | 浦项工科大学校产学协力团 | 2016-06-22 | — | — | CN | disclosed |