SCHEMBL2819669

SCHEMBL2819669

CC(O)CC(CC(C)(C)O)C(C)(C)O

nearest known ligand 0.31

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5317920 0.79 ALDH1A1 (0.39)
SCHEMBL16074805 0.78 TDP1 (0.43) MAPK1
SCHEMBL7876118 0.75 MAPK1 (0.33) MAPK1
Hexylene Glycol SCHEMBL123432 0.73
Hexylene Glycol SCHEMBL6869929 0.73 MAPK1 (0.39) MAPK1
Hexylene Glycol SCHEMBL19379 0.73
Hexylene Glycol SCHEMBL335683 0.73
Hexylene Glycol SCHEMBL11802241 0.71
SCHEMBL2826341 0.71 MAPK1 (0.38) MAPK1
Hexylene Glycol SCHEMBL6271981 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8206888-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2012-06-26 US disclosed
EP-1182506-B1 Crosslinked positive-working photoresist composition TOKYO OHKA KOGYO CO LTD (JP) 2010-10-27 EP disclosed
US-20100028800-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-02-04 US disclosed
CN-101313246-A Radiation-sensitive resin composition JSR CORP (JP) 2008-11-26 CN disclosed
EP-1953593-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2008-08-06 EP disclosed
US-7364831-B2 Positive resist composition and resist pattern formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2008-04-29 US disclosed
US-20070004816-A1 Photocurable resin composition DSM IP ASSETS B.V. (NL) 2007-01-04 US disclosed
CN-1806208-A Photocurable resin composition DSM IP ASSETS BV (NL) 2006-07-19 CN disclosed
EP-1634124-A1 PHOTOCURABLE RESIN COMPOSITION DSM IP Assets B.V. (NL) 2006-03-15 EP disclosed
US-20060014100-A1 Positive resist composition and resist pattern formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2006-01-19 US disclosed
US-6777158-B2 OCCURRENCE OF DEFECTS IN THE PATTERNED RESIST LAYER CAN BE GREATLY SUPPRESSED RESULTING IN INCREASED RELIABILITY OF THE SEMICONDUCTOR DEVICES AND PRODUCTIVITY THEREOF. TOKYO OHKA KOGYO CO., LTD. (JP) 2004-08-17 US disclosed
US-20040067615-A1 Method for the preparation of a semiconductor device MAEMORI SATOSHI (JP) 2004-04-08 US disclosed
US-6630282-B2 For giving a patterned resist layer with high pattern resolution and excellent resistance against etching, used for photolithographic patterning works in the manufacture of electronic devices TOKYO OHKA KOGYO CO., LTD. (JP) 2003-10-07 US disclosed
US-20020045133-A1 Method for the preparation of a semiconductor device TOKYO OHKA KOGYO CO., LTD. (JP) 2002-04-18 US disclosed
US-20020034704-A1 Crosslinked positive-working photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2002-03-21 US disclosed
EP-1182506-A1 Crosslinked positive-working photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2002-02-27 EP disclosed
US-6180316-B1 SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS JSR CORPORATION (JP) 2001-01-30 US disclosed
US-6120972-A COPOLYMER OF ACRYLIC ESTER AND CARBONATE WITH PHOTOACID GENERATOR FOR PHOTOSENSITIVE ELEMENTS JSR CORPORATION (JP) 2000-09-19 US disclosed
EP-0930541-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-07-21 EP disclosed
EP-0901043-A1 Radiation-sensitive resin composition JSR Corporation (JP) 1999-03-10 EP disclosed