SCHEMBL28218451

SCHEMBL28218451

CCC(c1ccc(CCCO)cc1)c1ccc(CCCO)cc1

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HTR2A P28223 1/20 0.45
CYP4A11 Q02928 2/20 0.44
PPARA Q07869 1/20 0.44
LTA4H P09960 1/20 0.43
EPHX2 P34913 1/20 0.43
CA2 P00918 3/20 0.43
ALDH1A1 P00352 3/20 0.40
HSD17B10 Q99714 2/20 0.40
HPGD P15428 1/20 0.40
VDR P11473 1/20 0.40
CYP4F2 P78329 1/20 0.40
CYSLTR2 Q9NS75 1/20 0.39
CYSLTR1 Q9Y271 1/20 0.39
ESR1 P03372 2/20 0.38
ADRA2A P08913 2/20 0.38
ADORA3 P0DMS8 2/20 0.38
TACR2 P21452 2/20 0.38
SLC6A2 P23975 2/20 0.38
SLC6A4 P31645 2/20 0.38
SLC6A3 Q01959 2/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5953374 0.94 HTR2A (0.47) HTR2ACYP4A11PPARALTA4HEPHX2
SCHEMBL27580373 0.88 TDP1 (0.50) HTR2ACYP4A11PPARACA2ALDH1A1
SCHEMBL28449485 0.83 HTR2A (0.56) HTR2ACA2ALDH1A1HSD17B10HPGD
SCHEMBL241881 0.82 LMNA (0.50) HTR2ACYP4A11PPARALTA4HEPHX2
SCHEMBL13500507 0.82 CYP4A11 (0.43) CYP4A11PPARALTA4HEPHX2CA2
SCHEMBL11745515 0.79 CYP4A11 (0.47) CYP4A11PPARALTA4HEPHX2CA2
SCHEMBL4639577 0.79 TSHR (0.46) HTR2APPARALTA4HCA2ESR1
SCHEMBL8100328 0.78 MAOB (0.59) HTR2AALDH1A1HSD17B10HPGDKDM4E
SCHEMBL8094049 0.78 MAOB (0.53) HTR2AALDH1A1CYP3A4
1,4-Butanediol SCHEMBL11501486 0.78 ESR1 (0.54) ALDH1A1HSD17B10ESR1ADORA3SLC6A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108137478-A Compound, resin, resist composition or radiation-sensitive composition, method for forming resist pattern, method for producing amorphous film, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, method for forming circuit pattern, and purification method 三菱瓦斯化学株式会社 2018-06-08 CN disclosed