SCHEMBL2833522

SCHEMBL2833522

O=[SiH2].[Cu].[Mn]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL238666 0.89
SCHEMBL3925794 0.89
SCHEMBL28708552 0.80
SCHEMBL14656880 0.80
SCHEMBL15456566 0.80
SCHEMBL28466444 0.80
SCHEMBL29191840 0.80
SCHEMBL999554 0.80
SCHEMBL15213 0.78
SCHEMBL23201297 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11894556-B2 Anode material for secondary battery, anode for secondary battery and secondary battery NATIONAL TSING HUA UNIVERSITY (TW) 2024-02-06 US claimed
CN-114864926-B Negative electrode material for secondary battery, negative electrode, and secondary battery 游萃蓉 2023-08-15 CN claimed
CN-114864926-A Negative electrode material for secondary battery, negative electrode, and secondary battery 游萃蓉 2022-08-05 CN claimed
US-20210226208-A1 ANODE MATERIAL FOR SECONDARY BATTERY, ANODE FOR SECONDARY BATTERY AND SECONDARY BATTERY NATIONAL TSING HUA UNIVERSITY (TW) 2021-07-22 US claimed
CN-113130889-A Negative electrode material for secondary battery, negative electrode, and secondary battery 游萃蓉 2021-07-16 CN claimed
US-8821750-B2 Metal polishing slurry and polishing method HITACHI CHEMICAL CO., LTD. (JP) 2014-09-02 US claimed
US-8681282-B2 Liquid crystal display device ALTIAM SERVICES LTD. LLC (US) 2014-03-25 US claimed
US-RE44817-E1 Copper alloy and liquid-crystal display device ALTIAM SERVICES LTD. LLC (US) 2014-03-25 US claimed
US-20120267628-A1 Liquid Crystal Display Device XENOGENIC DEVELOPMENT LIMITED LIABILITY COMPANY 2012-10-25 US claimed
US-20100120250-A1 METAL POLISHING SLURRY AND POLISHING METHOD HITACHI CHEMICAL CO., LTD. (JP) 2010-05-13 US claimed
US-11901554-B2 Anode material for secondary battery, anode for secondary battery and secondary battery NATIONAL TSING HUA UNIVERSITY (TW) 2024-02-13 US disclosed
US-11901554-B2 Anode material for secondary battery, anode for secondary battery and secondary battery NATIONAL TSING HUA UNIVERSITY (TW) 2024-02-13 US disclosed
US-11894556-B2 Anode material for secondary battery, anode for secondary battery and secondary battery NATIONAL TSING HUA UNIVERSITY (TW) 2024-02-06 US disclosed
US-11894556-B2 Anode material for secondary battery, anode for secondary battery and secondary battery NATIONAL TSING HUA UNIVERSITY (TW) 2024-02-06 US disclosed
CN-114725360-B Negative electrode material for secondary battery, negative electrode, and secondary battery 游萃蓉 2024-01-23 CN disclosed
US-20210226208-A1 ANODE MATERIAL FOR SECONDARY BATTERY, ANODE FOR SECONDARY BATTERY AND SECONDARY BATTERY NATIONAL TSING HUA UNIVERSITY (TW) 2021-07-22 US disclosed
CN-113130889-A Negative electrode material for secondary battery, negative electrode, and secondary battery 游萃蓉 2021-07-16 CN disclosed
CN-113130889-A Negative electrode material for secondary battery, negative electrode, and secondary battery 游萃蓉 2021-07-16 CN disclosed
US-8821750-B2 Metal polishing slurry and polishing method HITACHI CHEMICAL CO., LTD. (JP) 2014-09-02 US disclosed
US-20100120250-A1 METAL POLISHING SLURRY AND POLISHING METHOD HITACHI CHEMICAL CO., LTD. (JP) 2010-05-13 US disclosed