SCHEMBL238666

SCHEMBL238666

O=[SiH2].[Mn]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28708552 0.89
SCHEMBL14656880 0.89
SCHEMBL15456566 0.89
SCHEMBL2833522 0.89
SCHEMBL15213 0.87
SCHEMBL23201297 0.82
SCHEMBL1378714 0.75
SCHEMBL562096 0.75
Ammonia Solution, Strong SCHEMBL25368540 0.75
SCHEMBL20768711 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 215 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12550787-B2 Bonded assembly containing bonding pads with metal oxide barriers and methods for forming the same SanDisk Technologies, Inc. (US) 2026-02-10 US claimed
EP-4523252-A1 BONDED ASSEMBLY CONTAINING BONDING PADS WITH METAL OXIDE BARRIERS AND METHODS FOR FORMING THE SAME Sandisk Technologies, Inc. (US) 2025-03-19 EP claimed
CN-118251761-A Bonding assembly including bond pad with metal oxide barrier and method of forming the same 桑迪士克科技有限责任公司 2024-06-25 CN claimed
WO-2023219720-A1 BONDED ASSEMBLY CONTAINING BONDING PADS WITH METAL OXIDE BARRIERS AND METHODS FOR FORMING THE SAME SANDISK TECHNOLOGIES LLC (US) 2023-11-16 WO claimed
US-20230361069-A1 BONDED ASSEMBLY CONTAINING BONDING PADS WITH METAL OXIDE BARRIERS AND METHODS FOR FORMING THE SAME SanDisk Technologies, Inc. 2023-11-09 US claimed
US-20230298900-A1 Selective Removal Of An Etching Stop Layer For Improving Overlay Shift Tolerance TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2023-09-21 US claimed
US-11664237-B2 Semiconductor device having improved overlay shift tolerance TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2023-05-30 US claimed
CN-115020331-A Semiconductor structure and preparation method thereof 长鑫存储技术有限公司 2022-09-06 CN claimed
US-11362079-B2 Bonded die assembly containing a manganese-containing oxide bonding layer and methods for making the same SANDISK TECHNOLOGIES LLC (US) 2022-06-14 US claimed
CN-106409757-B Method for manufacturing semiconductor device 三星电子株式会社 2022-02-01 CN claimed
US-20120133044-A1 METAL CONTAINING SACRIFICE MATERIAL AND METHOD OF DAMASCENE WIRING FORMATION TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. (US) 2012-05-31 US claimed
US-20110285024-A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. (US) 2011-11-24 US claimed
CN-102237309-A Method for integrating manganese-oxide-based resistive memory with copper interconnection rear end process UNIV FUDAN 2011-11-09 CN claimed
CN-102237491-A Manganese oxide base resistance memory containing silicon doping and preparation method thereof UNIV FUDAN 2011-11-09 CN claimed
US-7354660-B2 High performance alloys with improved metal dusting corrosion resistance EXXONMOBIL RESEARCH AND ENGINEERING COMPANY (US) 2008-04-08 US claimed
US-20080023696-A1 Memory element and semiconductor device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2008-01-31 US claimed
EP-1883109-A1 Memory element and method of manufacturing thereof SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2008-01-30 EP claimed
EP-1880033-A2 HIGH PERFORMANCE ALLOYS WITH IMPROVED METAL DUSTING CORROSION RESISTANCE EXXONMOBIL RESEARCH AND ENGINEERING COMPANY (US) 2008-01-23 EP claimed
WO-2006121561-A2 HIGH PERFORMANCE ALLOYS WITH IMPROVED METAL DUSTING CORROSION RESISTANCE EXXONMOBIL RESEARCH AND ENGINEERING COMPANY (US) 2006-11-16 WO claimed
US-20060257675-A1 High performance alloys with improved metal dusting corrosion resistance EXXONMOBIL RESEARCH AND ENGINEERING COMPANY 2006-11-16 US claimed