Sulfuric Acid

Sulfuric Acid

SCHEMBL28423019

C=CCC(CC=C)N(CC)CC.C=CCC(CC=C)N(CC)CC.O=S(=O)(O)O

nearest known ligand 0.31

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Known targets — ChEMBL curated mechanism

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

The experimentally established mechanism targets of Sulfuric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
FDPS P14324 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Sulfuric Acid SCHEMBL31231811 0.90
Sulfuric Acid SCHEMBL29551565 0.87
SCHEMBL21204351 0.78
Sulfuric Acid SCHEMBL27839092 0.71 MEN1 (0.33)
SCHEMBL10376904 0.71
Sulfuric Acid SCHEMBL6419257 0.71
Sulfuric Acid SCHEMBL19285797 0.70 TP53 (0.33)
SCHEMBL28046281 0.70 FDPS (0.33) FDPS
SCHEMBL149449 0.69
SCHEMBL15252640 0.69 SLC22A6 (0.30)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119234296-A Polishing liquid, polishing method, method for manufacturing component, and method for manufacturing semiconductor component 株式会社力森诺科 2024-12-31 CN disclosed
CN-119177446-A Etching composition, method of etching metal-containing film using the same, and method of manufacturing semiconductor device using the same 三星电子株式会社 2024-12-24 CN disclosed
CN-107849252-B Copolymer of diallylamine and sulfur dioxide and method for producing same 日东纺绩株式会社 2020-06-02 CN disclosed