Methane

Methane

SCHEMBL284453

C.CC(C)(O)C(=O)O

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29373 0.96 — —
SCHEMBL1618313 0.96 ALDH1A1 (1.00) —
SCHEMBL6756839 0.92 — —
SCHEMBL10458538 0.92 ALDH1A1 (0.92) —
SCHEMBL28402001 0.92 — —
Ethane SCHEMBL7940564 0.92 — —
Ammonia Solution, Strong SCHEMBL1782484 0.92 — —
SCHEMBL9323495 0.92 — —
SCHEMBL11327880 0.92 — —
SCHEMBL8940464 0.92 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 191 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230288799-A1 METHOD OF FORMING PATTERNS SAMSUNG ELECTRONICS CO., LTD. (KR) 2023-09-14 — — US claimed
US-6291385-B1 Catalyst for polymerization or copolymerization of olefin SAMSUNG GENERAL CHEMICALS CO., LTD. (KR) 2001-09-18 — — US claimed
US-20240201591-A1 PHOTORESIST UNDERLAYER COMPOSITION DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2024-06-20 — — US disclosed
US-11940731-B2 Photoresist topcoat compositions and methods of processing photoresist compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2024-03-26 — — US disclosed
US-11932713-B2 Monomers, polymers and lithographic compositions comprising same ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2024-03-19 — — US disclosed
US-11874603-B2 Photoresist composition comprising amide compound and pattern formation methods using the same ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2024-01-16 — — US disclosed
US-20230418161-A1 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2023-12-28 — — US disclosed
US-11846885-B2 Topcoat compositions and photolithographic methods ROHM AND HAAS ELECTRONIC MATERIALS, LLC (US) 2023-12-19 — — US disclosed
US-11829069-B2 Photoresist compositions and methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2023-11-28 — — US disclosed
CN-117089418-A Substrate treatment composition and substrate treatment method using same SK株式会社 2023-11-21 — — CN disclosed
US-11822248-B2 Coating compositions for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2023-11-21 — — US disclosed
EP-2275490-A1 Coating compositions for use with an overcoated photoresist Rohm and Haas Electronic Materials, L.L.C. (US) 2011-01-19 — — EP disclosed
EP-2258691-A1 Coating compositions for use with an overcoated photoresist Rohm and Haas Electronic Materials, L.L.C. (US) 2010-12-08 — — EP disclosed
EP-2102184-A2 PHOTOACTIVE COMPOUNDS AZ Electronic Materials USA Corp. (US) 2009-09-23 — — EP disclosed
EP-2102156-A2 PHOTOACTIVE COMPOUNDS AZ Electronic Materials USA Corp. (US) 2009-09-23 — — EP disclosed
US-7582585-B2 Underlying antireflective coating employed with overcoated photoresist layer in manufacture microelectronic wafers; relief images ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2009-09-01 — — US disclosed
WO-2008068617-A2 PHOTOACTIVE COMPOUNDS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-06-12 — — WO disclosed
WO-2008068610-A2 PHOTOACTIVE COMPOUNDS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-06-12 — — WO disclosed
US-20050181299-A1 Coating compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2005-08-18 — — US disclosed
WO-2005066240-A1 COATING COMPOSITIONS ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2005-07-21 — — WO disclosed
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