Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of Zinc Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Zinc Ion SCHEMBL285709 | 0.87 | — | — | |
| Zinc Ion SCHEMBL19511743 | 0.87 | — | — | |
| Zinc Ion SCHEMBL31464204 | 0.87 | — | — | |
| SCHEMBL19511622 | 0.87 | — | — | |
| Zinc Ion SCHEMBL296729 | 0.75 | — | — | |
| Zinc Ion SCHEMBL5391444 | 0.75 | — | — | |
| Zinc Ion SCHEMBL16053737 | 0.75 | — | — | |
| Zinc Ion SCHEMBL296861 | 0.75 | — | — | |
| Zinc Ion SCHEMBL3798169 | 0.75 | — | — | |
| Zinc Ion SCHEMBL6046919 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 45 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8865493-B2 | Method of making double-sided wavelength converter and light generating device using same | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2014-10-21 | — | — | US | claimed |
| US-8350462-B2 | Light generating device having double-sided wavelength converter | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2013-01-08 | — | — | US | claimed |
| US-8216370-B2 | Method for reducing defect concentration in crystals | MOMENTIVE PERFORMANCE MATERIALS INC. (US) | 2012-07-10 | — | — | US | claimed |
| EP-1715086-B1 | Method for reducing defect concentrations in crystals | GEN ELECTRIC (US) | 2012-03-14 | — | — | EP | claimed |
| US-20110260601-A1 | LIGHT GENERATING DEVICE HAVING DOUBLE-SIDED WAVELENGTH CONVERTER | 3M INNOVATIVE PROPERTIES COMPANY | 2011-10-27 | — | — | US | claimed |
| EP-2380216-A2 | LIGHT GENERATING DEVICE HAVING DOUBLE-SIDED WAVELENGTH CONVERTER | 3M Innovative Properties Company (US) | 2011-10-26 | — | — | EP | claimed |
| EP-2380217-A2 | METHOD OF MAKING DOUBLE-SIDED WAVELENGTH CONVERTER AND LIGHT GENERATING DEVICE USING SAME | 3M Innovative Properties Company (US) | 2011-10-26 | — | — | EP | claimed |
| US-20110256648-A1 | Method of Making Double-sided Wavelength Converter and Light Generating Device Using Same | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2011-10-20 | — | — | US | claimed |
| US-20110186877-A1 | LIGHT EMITTING DIODE WITH BONDED SEMICONDUCTOR WAVELENGTH CONVERTER | 3M INNOVATIVE PROPERTIES COMPANY | 2011-08-04 | — | — | US | claimed |
| EP-2301087-A2 | LIGHT EMITTING DIODE WITH BONDED SEMICONDUCTOR WAVELENGTH CONVERTER | 3M Innovative Properties Company (US) | 2011-03-30 | — | — | EP | claimed |
| WO-2010075177-A2 | METHOD OF MAKING DOUBLE-SIDED WAVELENGTH CONVERTER AND LIGHT GENERATING DEVICE USING SAME | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2010-07-01 | — | — | WO | claimed |
| WO-2010074987-A2 | LIGHT GENERATING DEVICE HAVING DOUBLE-SIDED WAVELENGTH CONVERTER | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2010-07-01 | — | — | WO | claimed |
| WO-2009148717-A2 | LIGHT EMITTING DIODE WITH BONDED SEMICONDUCTOR WAVELENGTH CONVERTER | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2009-12-10 | — | — | WO | claimed |
| EP-1378591-B1 | Method for removing defects in crystals | DIAMOND INNOVATIONS INC (US) | 2009-03-25 | — | — | EP | claimed |
| US-7175704-B2 | Method for reducing defect concentrations in crystals | DIAMOND INNOVATIONS, INC. (US) | 2007-02-13 | — | — | US | claimed |
| EP-1715086-A1 | Method for reducing defect concentrations in crystals | GENERAL ELECTRIC COMPANY (US) | 2006-10-25 | — | — | EP | claimed |
| US-20060096521-A1 | Method for reducing defect concentration in crystals | MOMENTIVE PERFORMANCE MATERIALS INC. | 2006-05-11 | — | — | US | claimed |
| EP-1378591-A1 | Method for removing defects in crystals | General Electric Company (US) | 2004-01-07 | — | — | EP | claimed |
| US-20040000266-A1 | Method for reducing defect concentrations in crystals | Diamond Innovations, Inc | 2004-01-01 | — | — | US | claimed |
| US-9985113-B2 | Fabrication process for mitigating external resistance of a multigate device | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2018-05-29 | — | — | US | disclosed |
| US-20170148896-A1 | FABRICATION PROCESS FOR MITIGATING EXTERNAL RESISTANCE OF A MULTIGATE DEVICE | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2017-05-25 | — | — | US | disclosed |
| US-9653606-B2 | Fabrication process for mitigating external resistance of a multigate device | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2017-05-16 | — | — | US | disclosed |
| US-9484463-B2 | Fabrication process for mitigating external resistance of a multigate device | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2016-11-01 | — | — | US | disclosed |
| US-20160133750-A1 | FABRICATION PROCESS FOR MITIGATING EXTERNAL RESISTANCE OF A MULTIGATE DEVICE | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2016-05-12 | — | — | US | disclosed |
| US-9293622-B2 | Re-emitting semiconductor carrier devices for use with LEDs and methods of manufacture | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2016-03-22 | — | — | US | disclosed |
| US-9136357-B1 | Fabrication process for mitigating external resistance and interface state density in a multigate device | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2015-09-15 | — | — | US | disclosed |
| US-20150255568-A1 | FABRICATION PROCESS FOR MITIGATING EXTERNAL RESISTANCE AND INTERFACE STATE DENSITY IN A MULTIGATE DEVICE | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2015-09-10 | — | — | US | disclosed |
| US-20150255567-A1 | FABRICATION PROCESS FOR MITIGATING EXTERNAL RESISTANCE OF A MULTIGATE DEVICE | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2015-09-10 | — | — | US | disclosed |
| US-8994071-B2 | Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanisms | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2015-03-31 | — | — | US | disclosed |
| US-8216370-B2 | Method for reducing defect concentration in crystals | MOMENTIVE PERFORMANCE MATERIALS INC. (US) | 2012-07-10 | — | — | US | disclosed |
| US-20120097983-A1 | RE-EMITTING SEMICONDUCTOR CARRIER DEVICES FOR USE WITH LEDS AND METHODS OF MANUFACTURE | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2012-04-26 | — | — | US | disclosed |
| EP-2427924-A1 | RE-EMITTING SEMICONDUCTOR CARRIER DEVICES FOR USE WITH LEDS AND METHODS OF MANUFACTURE | 3M Innovative Properties Company (US) | 2012-03-14 | — | — | EP | disclosed |
| EP-2427921-A1 | SEMICONDUCTOR DEVICES GROWN ON INDIUM-CONTAINING SUBSTRATES UTILIZING INDIUM DEPLETION MECHANISMS | 3M Innovative Properties Company (US) | 2012-03-14 | — | — | EP | disclosed |
| EP-1715086-B1 | Method for reducing defect concentrations in crystals | GEN ELECTRIC (US) | 2012-03-14 | — | — | EP | disclosed |
| US-20120037957-A1 | SEMICONDUCTOR DEVICES GROWN ON INDIUM-CONTAINING SUBSTRATES UTILIZING INDIUM DEPLETION MECHANISMS | 3M INNOVATIVE PROPERTIES COMPANY | 2012-02-16 | — | — | US | disclosed |
| WO-2010129409-A1 | SEMICONDUCTOR DEVICES GROWN ON INDIUM-CONTAINING SUBSTRATES UTILIZING INDIUM DEPLETION MECHANISMS | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2010-11-11 | — | — | WO | disclosed |
| WO-2010129464-A1 | RE-EMITTING SEMICONDUCTOR CARRIER DEVICES FOR USE WITH LEDS AND METHODS OF MANUFACTURE | 3M INNOVATIVE PROPERTIES COMPANY (US) | 2010-11-11 | — | — | WO | disclosed |
| EP-1378591-B1 | Method for removing defects in crystals | DIAMOND INNOVATIONS INC (US) | 2009-03-25 | — | — | EP | disclosed |
| US-7495249-B2 | Radiation-emitting semiconducting body with confinement layer | OSRAM OPTO SEMICONDUCTORS GMBH (DE) | 2009-02-24 | — | — | US | disclosed |
| US-7175704-B2 | Method for reducing defect concentrations in crystals | DIAMOND INNOVATIONS, INC. (US) | 2007-02-13 | — | — | US | disclosed |
| EP-1715086-A1 | Method for reducing defect concentrations in crystals | GENERAL ELECTRIC COMPANY (US) | 2006-10-25 | — | — | EP | disclosed |
| US-20060096521-A1 | Method for reducing defect concentration in crystals | MOMENTIVE PERFORMANCE MATERIALS INC. | 2006-05-11 | — | — | US | disclosed |
| US-20050074044-A1 | Radiation-emitting semiconducting body with confinement layer | OSRAM OPTO SEMICONDUCTORS GMBH (DE) | 2005-04-07 | — | — | US | disclosed |
| EP-1378591-A1 | Method for removing defects in crystals | General Electric Company (US) | 2004-01-07 | — | — | EP | disclosed |
| US-20040000266-A1 | Method for reducing defect concentrations in crystals | Diamond Innovations, Inc | 2004-01-01 | — | — | US | disclosed |
| US-20040000266-A1 | Method for reducing defect concentrations in crystals | Diamond Innovations, Inc | 2004-01-01 | — | — | US | disclosed |