SCHEMBL28530800

SCHEMBL28530800

CC1=CC(=O)N(c2ccc(Oc3ccccc3)cc2)C1=O

nearest known ligand 0.60

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MGLL Q99685 2/20 0.60
LMNA P02545 1/20 0.47
PLCG1 P19174 1/20 0.43
NTRK1 P04629 2/20 0.43
IGF1R P08069 2/20 0.43
FGFR1 P11362 2/20 0.43
NTRK2 Q16620 2/20 0.43
NTRK3 Q16288 1/20 0.43
USP2 O75604 1/20 0.42
ALDH1A1 P00352 1/20 0.42
MAPT P10636 1/20 0.42
ALOX15 P16050 1/20 0.42
TDP1 Q9NUW8 1/20 0.42
FAAH O00519 1/20 0.40
LTA4H P09960 2/20 0.40
MCHR1 Q99705 1/20 0.40
KMT2A Q03164 1/20 0.40
KAT2B Q92831 1/20 0.39
HTT P42858 1/20 0.39
SMN1; SMN2 Q16637 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4391609 0.93 MGLL (0.49) MGLLLMNAALDH1A1FAAHKMT2A
SCHEMBL24208309 0.91 BRD4 (0.49) MGLLLMNANTRK1IGF1RFGFR1
SCHEMBL28527836 0.88 MGLL (0.45) MGLLNTRK1IGF1RFGFR1NTRK2
SCHEMBL24208358 0.86 MGLL (0.59) MGLLLMNAALDH1A1MAPTTDP1
SCHEMBL774452 0.84 MGLL (0.50) MGLLALDH1A1FAAHKMT2A
SCHEMBL1116234 0.83 MGLL (0.41) MGLLLMNAALDH1A1MAPTMCHR1
SCHEMBL28398984 0.83 MGLL (0.41) MGLLLMNAALDH1A1MCHR1KMT2A
SCHEMBL94147 0.82 MGLL (0.46) MGLLTDP1FAAHKMT2A
SCHEMBL30309847 0.81 MGLL (0.56) MGLLLMNAALDH1A1MAPTFAAH
SCHEMBL28434246 0.81 MGLL (0.59) MGLLLMNAALDH1A1MAPTKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-112400138-A Material for forming film for lithography, composition for forming film for lithography, underlayer film for lithography, and pattern formation method 三菱瓦斯化学株式会社 2021-02-23 CN disclosed