⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3482040 | 0.85 | ALDH1A1 (0.32) | — | |
| SCHEMBL2959743 | 0.85 | TP53 (0.33) | — | |
| SCHEMBL15736529 | 0.83 | IDO1 (0.32) | — | |
| SCHEMBL676008 | 0.82 | NQO1 (0.35) | — | |
| SCHEMBL15737772 | 0.81 | — | — | |
| SCHEMBL1172545 | 0.78 | HTT (0.41) | — | |
| SCHEMBL15733330 | 0.78 | IDO1 (0.38) | — | |
| SCHEMBL2864305 | 0.77 | — | — | |
| SCHEMBL48956 | 0.76 | LTA4H (0.37) | — | |
| SCHEMBL6748691 | 0.75 | CYP1A2 (0.41) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2034002-B1 | Nanoncrystal-metal oxide composites and preparation method thereof | SAMSUNG ELECTRONICS CO LTD (KR) | 2013-07-17 | — | — | EP | claimed |
| EP-2154708-B1 | High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device | SHINETSU CHEMICAL CO (JP) | 2017-07-26 | — | — | EP | disclosed |
| US-9260458-B2 | Method of producing an organic silicon compound | DOW CORNING CORPORATION (US) | 2016-02-16 | — | — | US | disclosed |
| US-20150141689-A1 | Method Of Producing An Organic Silicon Compound | DOW TORAY CO., LTD. (JP) | 2015-05-21 | — | — | US | disclosed |
| US-8277600-B2 | High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-02 | — | — | US | disclosed |
| US-20100040895-A1 | HIGH-TEMPERATURE BONDING COMPOSITION, SUBSTRATE BONDING METHOD, AND 3-D SEMICONDUCTOR DEVICE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-02-18 | — | — | US | disclosed |
| EP-2154708-A1 | High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-02-17 | — | — | EP | disclosed |