SCHEMBL2862870

SCHEMBL2862870

CCO[Si]1(OCC)CC[Si](OCC)(OCC)CC1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14564288 0.87
SCHEMBL6053267 0.87
SCHEMBL15157466 0.87
SCHEMBL2864111 0.86
SCHEMBL13915428 0.79
SCHEMBL1482876 0.79
SCHEMBL2869631 0.79
SCHEMBL2865969 0.76
SCHEMBL335704 0.71
SCHEMBL13915433 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4307343-A2 USE OF SILYL BRIDGED ALKYL COMPOUNDS FOR DENSE OSG FILMS Versum Materials US, LLC (US) 2024-01-17 EP claimed
US-20180122632-A1 USE OF SILYL BRIDGED ALKYL COMPOUNDS FOR DENSE OSG FILMS VERSUM MATERIALS US, LLC 2018-05-03 US claimed
EP-4307343-A2 USE OF SILYL BRIDGED ALKYL COMPOUNDS FOR DENSE OSG FILMS Versum Materials US, LLC (US) 2024-01-17 EP disclosed
US-10249489-B2 Use of silyl bridged alkyl compounds for dense OSG films VERSUM MATERIALS US, LLC (US) 2019-04-02 US disclosed
US-20180122632-A1 USE OF SILYL BRIDGED ALKYL COMPOUNDS FOR DENSE OSG FILMS VERSUM MATERIALS US, LLC 2018-05-03 US disclosed
EP-2154708-B1 High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device SHINETSU CHEMICAL CO (JP) 2017-07-26 EP disclosed
US-8277600-B2 High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-02 US disclosed
US-20100040895-A1 HIGH-TEMPERATURE BONDING COMPOSITION, SUBSTRATE BONDING METHOD, AND 3-D SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-02-18 US disclosed
EP-2154708-A1 High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device Shin-Etsu Chemical Co., Ltd. (JP) 2010-02-17 EP disclosed
US-7497965-B2 Insulating film-forming composition, insulating film and production method thereof FUJIFILM CORPORATION (JP) 2009-03-03 US disclosed
US-20070034992-A1 Insulating film-forming composition, insulating film and production method thereof FUJI PHOTO FILM CO., LTD. 2007-02-15 US disclosed